公开(公告)号：JP2008088511A

公开(公告)日：2008-04-17

申请号：JP2006271707

申请日：2006-10-03

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： TANAKA SHINICHI ,  SAKURAI ATSUSHI ,  YAMADA NAOKI

IPC: C23C16/40 ,  C07F3/06

CPC classification number: C07F3/06 ,  C23C16/40

Abstract: PROBLEM TO BE SOLVED: To impart properties such as reactivity and volatility suitable to a precursor feeding zinc to a thin film, particularly, to impart properties such as reactivity and volatility suitable for the production of a thin film by oxidation in a CVD (chemical vapor deposition) process.
SOLUTION: The raw material for thin film deposition comprises a zinc compound expressed by general formula (1) (wherein, R
1 is a 1 to 4C alkyl group; R
2 and R
3 are each a hydrogen atom or a 1 to 4C alkyl group, respectively independently; R
4 is a 1 to 4C alkyl group; R
5 is a 1 to 4C alkyl group or -CH
2 -CH
2 -NR
6 R
7 ; R
6 and R
7 are each a 1 to 4C alkyl group; X is an oxygen atom or a nitrogen atom; and (m) is 0 in the case X is an oxygen atom, and is 1 in the case X is a nitrogen atom).
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了赋予适合于将锌前体加入到薄膜中的反应性和挥发性等特性，特别是赋予适于通过CVD中氧化生产薄膜的反应性和挥发性等特性 （化学气相沉积）工艺。 解决方案：用于薄膜沉积的原料包括由通式（1）表示的锌化合物（其中，R 1 SP 1是一个1-4C烷基; R 2 SP 2， 分别独立地为氢原子或1〜4个碳原子的烷基，R 4为烷基; R 6为烷基， CH 2是1至4个烷基或-CH 2 SB 2 -CH SB 2 -NR 6 SP SP 7 >; R 6 和R 7 各自为1至4个烷基; X为氧原子或氮原子;（x）为 是氧原子，在X是氮原子的情况下为1）。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2009173587A

公开(公告)日：2009-08-06

申请号：JP2008014791

申请日：2008-01-25

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： YAMADA NAOKI ,  YOSHINAKA ATSUYA ,  WADA SENJI

IPC: C07F7/28 ,  C23C16/34

CPC classification number: C07F7/006 ,  C23C16/308 ,  C23C16/34 ,  C23C16/40 ,  C23C16/45553

Abstract: PROBLEM TO BE SOLVED: To provide a metal compound that gives a good metal-containing thin film containing little residual carbon and allows a process exhibiting a stable film formation speed and stable controllability of the thin film composition.
SOLUTION: The metal compound is represented by general formula (1) (wherein M is titanium, zirconium or hafnium; X is a halogen atom; and m is 1 or 2).
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种赋予含有少量残留碳的良好的含金属薄膜的金属化合物，并且允许显示出稳定的成膜速度和薄膜组合物的稳定可控性的方法。 解决方案：金属化合物由通式（1）表示（其中M为钛，锆或铪; X为卤素原子，m为1或2）。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008050623A

公开(公告)日：2008-03-06

申请号：JP2006225023

申请日：2006-08-22

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： YAMADA NAOKI ,  YOSHINAKA ATSUYA ,  TANAKA SHINICHI

IPC: C23C16/40

Abstract: PROBLEM TO BE SOLVED: To provide a raw material suitable for producing a thin film containing zinc, and to provide a method for producing the thin film through a chemical vapor deposition technique using the same.
SOLUTION: The raw material for forming the thin film is formed of a solution in which bis(pentane-2, 4-dionate) zinc nonhydrate of 0.1 to 1 mol dissolves in an organic solvent containing no hydroxy group of 1,000 ml, as an essential component. The method for producing the thin film comprises the steps of: introducing a vapor containing the bis(pentane-2, 4-dionate) zinc nonhydrate, which has been obtained by vaporizing the raw material for forming the thin film, onto a substrate; and decomposing and/or chemically reacting the vapor to form the thin film containing zinc atoms on the substrate.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供适合于生产含锌薄膜的原料，并提供通过使用该薄膜的化学气相沉积技术制造薄膜的方法。 解决方案：用于形成薄膜的原料由其中0.1〜1摩尔的双（戊烷-2,4-二酸）锌非水溶液溶解在不含羟基的有机溶剂中的溶液为1000毫升的溶液形成， 作为必不可少的组成部分。 制造薄膜的方法包括以下步骤：将通过将用于形成薄膜的原料气化而获得的双（戊烷-2,4-二酸）锌非水合物的蒸气引入到基材上; 并且使蒸气分解和/或化学反应以在衬底上形成含有锌原子的薄膜。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006312600A

公开(公告)日：2006-11-16

申请号：JP2005135704

申请日：2005-05-09

Applicant: Adeka Corp ,  株式会社Adeka

Inventor： YAMADA NAOKI ,  SAKURAI ATSUSHI

IPC: C07F7/00 ,  C07F7/28 ,  C23C16/40

Abstract: PROBLEM TO BE SOLVED: To provide a compound of a group 4 metal, such as titanium or zirconium which is suitable as a raw material used in a thin film-producing method, such as a CVD method or an ALD method, using a vaporized precursor, is easily thermally and/or oxidatively decomposed, when deposited into a thin film, has a low melting point, can be transported in a liquid state, has a large vapor pressure, can easily be vaporized, when vaporized or transported, and can easily control the composition of an obtained thin film, when producing the thin film of many components.
SOLUTION: This metal compound is represented by the general formula (I) [R
1 to R
7 are each a 1 to 4C alkyl; A is a 1 to 4C alkanediyl; M is titanium, zirconium or hafnium atom; (m) is 1, 2 or 3].
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供适合作为薄膜制造方法中使用的原料的第四族金属如钛或锆的化合物，例如CVD法或ALD法，使用 蒸发的前体易于热和/或氧化分解，当沉积成薄膜，具有低熔点时，可以以液态运输，蒸气压大，蒸发或运输时容易蒸发， 并且当制造许多组分的薄膜时，可以容易地控制所获得的薄膜的组成。 解决方案：该金属化合物由通式（I）表示：[R SP 1] / R 3至R 7 各自为1至4个烷基; A是1至4个烷二基; M是钛，锆或铪原子; （m）为1,2或3]。 版权所有（C）2007，JPO＆INPIT