14.
    发明专利
    未知

    公开(公告)号:FR2491206B1

    公开(公告)日:1985-12-06

    申请号:FR8118115

    申请日:1981-09-25

    Applicant: ASEA AB

    Abstract: A sensor element adaptable for measurement of a physical parameter formed of a crystalline material and emitting luminescent spectra upon excitation by light spectra and the influence of said physical parameter. A first layer emitting luminescent spectra is formed of a semiconductor material containing dopant providing shallow energy levels and recombination centers with a concentration between 1015 to 1018 cm-3, and sandwiched between second and third layers of semiconductor material having low absorption for light excitation of the first layer, and the respective lattice constants of the second and third layers being substantially coincidental with the lattice constant of the first layer. The sensor element is formed of GaAs for the substrate and AlGaAs for the semiconductor layers, with appropriate variation in the concentration Al, Ga, and As for the various layers. Generally, the energy band gap of the layers sandwiching the luminescent emitting layer are higher than that of the emitting layer. In a modified embodiment, GaAs is used as the luminescence emitting layer with covering semiconductor layers of AlGaAs, with appropriate variation in the concentration of Al, Ga and As. In a further modification an additional semiconductor layer of AlGaAs is sandwiched between the active semiconductor layer and a non-active semiconductor layer to reduce or eliminate a shift in the wavelength emission of the sensor element.

    FIBER-OPTIC LUMINESCENCE MEASURING SYSTEM FOR MEASURING LIGHT TRANSMISSION IN AN OPTIC SENSOR

    公开(公告)号:CA1221556A

    公开(公告)日:1987-05-12

    申请号:CA450211

    申请日:1984-03-22

    Applicant: ASEA AB

    Abstract: A fiber-optic measuring device for measuring physical quantities, comprising a transducer unit and an electronic unit which are interconnected by means of at least one optic fiber. The measuring device is characterized in that the transducer unit comprises at least two photoluminescent elements, of which at least one is positioned in the ray path of light from the fiber, at least partly behind another element. The physical quantities to be measured are arranged to influence the light transmission between the photo-luminescent elements. The electronic unit includes at least two light sources having different emission spectra which are so chosen in relation to the absorption and transmission spectra of the photo-lumin-escent elements that one light source is arranged to excite substantially one of the photo-luminescent elements whereas the other light sources at least partly excite the other element or elements.

    FIBRE-OPTICAL MEASURING APPARATUS
    18.
    发明专利

    公开(公告)号:CA1191901A

    公开(公告)日:1985-08-13

    申请号:CA411370

    申请日:1982-09-14

    Applicant: ASEA AB

    Abstract: A fiber-optical measuring apparatus for measuring magnetic fields, current, position, and various mechanical quantities consists of a transducer connected to a measuring electronic unit via at least one optical fiber, and the transducer comprises a magneto-optical modulator with a domain-producing magnetic material. The transducer is provided with at least two optical filters, of which at least one filter is positioned in the ray path on one side of the magneto-optical modulator and at least one other filter is positioned in the ray path on the opposite side of the modulator.

    OPTICAL SENSOR ELEMENT
    19.
    发明专利

    公开(公告)号:CA1188397A

    公开(公告)日:1985-06-04

    申请号:CA386818

    申请日:1981-09-28

    Applicant: ASEA AB

    Abstract: The invention relates to a sensor element formed of a crystalline material and which emits reproducible luminescence spectra in response to excitation light spectra. Such a sensor element comprises a first layer of semiconductor material emitting the reproducible luminescence spectra upon excitation by the excitation light spectra and doped with materials providing shallow energy levels and recombination centers. This first layer has a dopant concentration between 1015 to 1018/cm3. The sensor element further comprises at least second and third layers of semiconductor material surrounding the first layer and having low absorption for the excitation light and luminescent light of this first layer. The second and third semiconductor layers have respective lattice constants substantially coinciding with that of the first layer and each semiconductor layer has a same type of majority charge carriers.

    Semiconductor photodetector having tailored spectral sensitivity

    公开(公告)号:GB2108760A

    公开(公告)日:1983-05-18

    申请号:GB8231208

    申请日:1982-11-01

    Applicant: ASEA AB

    Abstract: In a semiconductor photodetector formed as a monolithic structure comprising regions (30, 31, 32) having mutually differing light absorption properties, an absorbing region (30) and a photoresponsive portion (31, 32) are separated by a diffusion barrier (30.5) in the form of a zone, layer or boundary surface constituting a bar to diffusion of minority charge carriers. The photoresponsive portion may comprise a P-N junction, Schottky diode or MOS structure, and the absorbing region (30) may be a filter region.

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