公开(公告)号：EP3255493A1

公开(公告)日：2017-12-13

申请号：EP16173580.8

申请日：2016-06-08

Applicant: ASML Netherlands B.V.

Inventor： VAN DIJK, Leon, Paul ,  CALADO, Victor, Emanuel ,  ROELOFS, Willem, Seine, Christian ,  VAN HAREN, Richard, Johannes, Franciscus

IPC: G03F1/62

CPC classification number: G03F1/62 ,  G03F1/84 ,  G03F7/70525 ,  G03F7/70783

Abstract: Disclosed is a method of determining a pellicle compensation correction which compensates for a distortion of a patterning device resultant from mounting of a pellicle onto the patterning device. The method comprises determining a pellicle induced distortion from a first shape associated with the patterning device without the pellicle mounted and a second shape associated with the patterning device with the pellicle mounted, the pellicle induced distortion describing the distortion of the patterning device due to the pellicle being mounted. The determined pellicle induced distortion is then used to calculate the pellicle compensation correction for a lithographic exposure step using the patterning device.

Abstract translation: 公开了一种确定薄膜补偿校正的方法，其补偿由将薄膜安装到图案形成装置上所导致的图案形成装置的变形。 该方法包括：从安装有防护薄膜组件的图案形成装置的第一形状和安装防护薄膜组件的图案形成装置的第二形状确定薄膜引起的变形，薄膜引起的变形描述由薄膜引起的图案形成装置的变形 被安装。 然后使用图案形成装置，使用所确定的薄膜诱导变形来计算用于光刻曝光步骤的薄膜补偿校正。

公开(公告)号：EP4474908A1

公开(公告)日：2024-12-11

申请号：EP23177916.6

申请日：2023-06-07

Applicant: ASML Netherlands B.V.

Inventor： CALADO, Victor, Emanuel ,  VAN LEEST, Adriaan, Johan ,  THISSEN, Nick, Franciscus, Wilhelmus ,  MATHIJSSEN, Simon, Gijsbert, Josephus

IPC: G03F7/00

Abstract: Disclosed is a method of determining at least one exposure parameter such as focus and/or dose. The method comprises obtaining production metrology data for a plurality of structures; grouping said production metrology data into a plurality of neighbor groups, each neighbor group describing a different arrangement of said structures; obtaining pre-calibrated sensitivity relationship data for each of said plurality of neighbor groups or different combinations thereof, and inferring said at least one exposure parameter from the production metrology data and pre-calibrated sensitivity relationship data.

公开(公告)号：EP3330797A1

公开(公告)日：2018-06-06

申请号：EP16201848.5

申请日：2016-12-02

Applicant: ASML Netherlands B.V.

Inventor： VAN HAREN, Richard, Johannes, Franciscus ,  CALADO, Victor, Emanuel ,  VAN DIJK, Leon, Paul

IPC: G03F7/20 ,  H01L21/30 ,  H01L21/67 ,  H01L21/66

CPC classification number: G03F7/70625 ,  G03F7/70525 ,  G03F7/70633 ,  H01L21/30 ,  H01L22/12 ,  H01L22/20

Abstract: A method to change an etch parameter of a substrate etching process, the method comprising: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.

公开(公告)号：EP3321740A1

公开(公告)日：2018-05-16

申请号：EP16198435.6

申请日：2016-11-11

Applicant: ASML Netherlands B.V.

Inventor： VAN DIJK, Leon, Paul ,  CALADO, Victor, Emanuel ,  Liu, Xing Lan ,  VAN HAREN, Richard, Johannes, Franciscus

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G03F7/70508 ,  G03F7/70783 ,  G03F9/7046

Abstract: A method of determining an optimal operational parameter setting of a metrology system is described. Free-form wafer shape measurements are performed 304. A model is applied 306, transforming the measured warp to modeled warp scaling values 308. Wafers are clamped to a chuck in a lithographic apparatus, causing wafer deformation. Alignment marks are measured using the scanner alignment system 312 with four alignment measurement colors. Scaling values 314 thus obtained are corrected 316 with the modeled warp scaling values 308 to determine corrected scaling values 318. The optimal alignment measurement color is determined, based on the corrected scaling values 318. Scaling values are selected that were measured using the optimal alignment measurement color and, at step 326, the wafer grid 328 is determined using the selected scaling values. A wafer is exposed 330 using the determined wafer grid 328 to correct exposure of the wafer.

Abstract translation: 描述了确定度量衡系统的最佳操作参数设置的方法。 执行304自由形式的晶片形状测量。施加模型306，将测量的翘曲转化为模拟的翘曲值308.晶片被夹持在光刻设备中的卡盘上，导致晶片变形。 使用具有四种对准测量颜色的扫描仪对准系统312来测量对准标记。 如此获得的缩放值314利用建模的扭曲缩放值308来校正316以确定校正的缩放值318.基于校正的缩放值318确定最佳对准测量颜色。选择使用最佳对齐测量 颜色，并且在步骤326中，使用选择的缩放值确定晶圆网格328。 使用所确定的晶圆格栅328来暴露晶圆330以校正晶圆的曝光。