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公开(公告)号：US20150074622A1
公开(公告)日：2015-03-12
申请号：US14543498
申请日：2014-11-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Hanying Feng , Yu Cao , Jun Ye
IPC: G06F17/50
CPC classification number: G06F17/5068 , G03F1/70 , G03F7/70125 , G03F7/70258 , G03F7/70441 , G03F7/705 , G06F17/5009 , G06F2217/06 , G06F2217/08 , G06F2217/10 , G06F2217/12
Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein, and preferably including optimizing a source, a mask, and the projection optics. The projection optics is sometimes broadly referred to as “lens”, and therefore the joint optimization process may be termed source mask lens optimization (SMLO). SMLO is desirable over existing source mask optimization process (SMO), partially because including the projection optics in the optimization can lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics can be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process. According to the embodiments herein, the optimization can be accelerated by iteratively using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).
Abstract translation: 本发明的实施例提供了优化包括优化其中的投影光学元件的光刻投影设备的方法，并且优选地包括优化源，掩模和投影光学元件。 投影光学器件有时被广泛地称为“透镜”，因此联合优化过程可以被称为源掩模透镜优化（SMLO）。 SMLO对于现有的源掩码优化处理（SMO）是期望的，部分原因在于，通过引入投影光学器件的多个可调特性，优化中的投影光学器件可以导致更大的处理窗口。 投影光学元件可用于在光刻投影设备中形成波前，从而实现整个成像过程的像差控制。 根据本文的实施例，可以通过迭代地使用线性拟合算法或者使用使用传输交叉系数（TCC）的偏导数的泰勒级数扩展来加速优化。
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公开(公告)号：US10401732B2
公开(公告)日：2019-09-03
申请号：US15451328
申请日：2017-03-06
Applicant: ASML Netherlands B.V.
Inventor： Duan-Fu Hsu , Luoqi Chen , Hanying Feng , Rafael C. Howell , Xinjian Zhou , Yi-Fan Chen
IPC: G03F7/20
Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics may be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.
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Patent Agency Ranking
13.发明申请公开(公告)号：US20180322224A1
公开(公告)日：2018-11-08
申请号：US16036690
申请日：2018-07-16
Applicant: ASML NETHERLANDS B.V.
Inventor： Jun Ye , Yu Cao , Hanying Feng , Wenjin Shao
CPC classification number: G06F17/50 , G03F1/14 , G03F1/44 , G03F1/68 , G03F7/70433 , G03F7/705 , G06F17/10 , G06F17/5009
Abstract: Methods provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.
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14.发明授权公开(公告)号：US10025885B2
公开(公告)日：2018-07-17
申请号：US14589738
申请日：2015-01-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Jun Ye , Yu Cao , Hanying Feng , Wenjin Shao
Abstract: Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.
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公开(公告)号：US09619603B2
公开(公告)日：2017-04-11
申请号：US14543498
申请日：2014-11-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Hanying Feng , Yu Cao , Jun Ye
CPC classification number: G06F17/5068 , G03F1/70 , G03F7/70125 , G03F7/70258 , G03F7/70441 , G03F7/705 , G06F17/5009 , G06F2217/06 , G06F2217/08 , G06F2217/10 , G06F2217/12
Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein, and preferably including optimizing a source, a mask, and the projection optics. The projection optics is sometimes broadly referred to as “lens”, and therefore the joint optimization process may be termed source mask lens optimization (SMLO). SMLO is desirable over existing source mask optimization process (SMO), partially because including the projection optics in the optimization can lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics can be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process. According to the embodiments herein, the optimization can be accelerated by iteratively using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).
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16.发明授权Pattern-independent and hybrid matching/tuning including light manipulation by projection optics 有权图案独立和混合匹配/调谐，包括投影光学的光线操纵公开(公告)号：US09378309B2
公开(公告)日：2016-06-28
申请号：US14294745
申请日：2014-06-03
Applicant: ASML NETHERLANDS B.V.
Inventor： Hanying Feng , Yu Cao , Jun Ye
CPC classification number: G06F17/50 , G02B19/0014 , G02B19/0028 , G02B19/0095 , G03F7/705
Abstract: Described herein are methods for matching the characteristics of a lithographic projection apparatus to a reference lithographic projection apparatus, where the matching includes optimizing illumination source and projection optics characteristics. The projection optics can be used to shape wavefront in the lithographic projection apparatus. According to the embodiments herein, the methods can be accelerated by using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).
Abstract translation: 这里描述了将光刻投影设备的特性与参考光刻投影设备进行匹配的方法，其中匹配包括优化照明源和投影光学特性。 投影光学元件可用于在光刻投影装置中形成波前。 根据本文的实施例，可以通过使用线性拟合算法或使用使用传输交叉系数（TCC）的偏导数的泰勒级数扩展来加速该方法。
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公开(公告)号：US20130232457A1
公开(公告)日：2013-09-05
申请号：US13858795
申请日：2013-04-08
Applicant: ASML NETHERLANDS B.V.
Inventor： Jun YE , Yu Cao , Hanying Feng
IPC: G06F17/50
CPC classification number: G06F17/50 , G03F1/144 , G03F1/36 , G03F1/68 , G03F7/70433 , G03F7/705 , G03F7/70516
Abstract: A method of efficient optical and resist parameters calibration based on simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents the imaging result of the target design for the lithographic process. Systems and methods for calibration of lithographic processes whereby a polynomial fit is calculated for a nominal configuration of the optical system and which can be used to estimate critical dimensions for other configurations.
Abstract translation: 一种基于模拟用于对具有多个特征进行成像的目标设计的光刻工艺的成像性能的有效的光学和抗蚀剂参数校准的方法。 该方法包括以下步骤：确定用于产生模拟图像的功能，其中该功能考虑到与光刻工艺相关联的工艺变化; 并利用该功能产生模拟图像，其中模拟图像表示用于光刻工艺的目标设计的成像结果。 用于校准光刻过程的系统和方法，由此针对光学系统的标称配置计算多项式拟合，并且其可以用于估计其他配置的关键尺寸。
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