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    METROLOGY METHOD AND APPARATUS, COMPUTER PROGRAM AND LITHOGRAPHIC SYSTEM
    16.
    发明申请
    METROLOGY METHOD AND APPARATUS, COMPUTER PROGRAM AND LITHOGRAPHIC SYSTEM 审中-公开

    公开(公告)号：US20190163075A1

    公开(公告)日：2019-05-30

    申请号：US16318999

    申请日：2017-07-11

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Thomas THEEUWES ,  Hugo Augustinus Joseph CRAMER

    IPC: G03F7/20 ,  G01N21/956

    Abstract: A method of reconstructing a characteristic of a structure formed on a substrate by a lithographic process, and an associated metrology apparatus. The method includes combining measured values of a first parameter associated with the lithographic process to obtain an estimated value of the first parameter; and reconstructing at least a second parameter associated with the characteristic of the structure using the estimated value of the first parameter and a measurement of the structure. The combining may involve modeling a variation of the first parameter to obtain a parameter model or fingerprint of the first parameter.

    METHOD OF DETERMINING EDGE PLACEMENT ERROR, INSPECTION APPARATUS, PATTERNING DEVICE, SUBSTRATE AND DEVICE MANUFACTURING METHOD
    18.
    发明申请
    METHOD OF DETERMINING EDGE PLACEMENT ERROR, INSPECTION APPARATUS, PATTERNING DEVICE, SUBSTRATE AND DEVICE MANUFACTURING METHOD 审中-公开
    确定边缘放置错误的方法，检查装置，图案装置，基板和装置的制造方法

    公开(公告)号：US20170010541A1

    公开(公告)日：2017-01-12

    申请号：US15114368

    申请日：2015-01-22

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Seyed Iman MOSSAVAT ,  Hugo Augustinus Joseph CRAMER ,  Maurits VAN DER SCHAAR

    IPC: G03F7/20 ,  G01B11/27

    CPC classification number: G03F7/70591 ,  G01B11/272 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683

    Abstract: A method of determining edge placement error within a structure produced using a lithographic process, the method comprising the steps of: (a) receiving a substrate comprising a first structure produced using the lithographic process, the first structure comprising first and second layers, each of the layers having first areas of electrically conducting material and second areas of non-electrically conducting material; (b) receiving a target signal indicative of a first target relative position which is indicative of a target position of edges between the first areas and the second areas of the first layer relative to edges between the first areas and second areas of the second layer in the first structure during said lithographic process; (c) detecting scattered radiation while illuminating the first structure with optical radiation to obtain a first signal; and (d) ascertaining an edge placement error parameter on the basis of the first signal and the first target relative position.

    Abstract translation: 一种确定在使用光刻工艺制造的结构内的边缘放置误差的方法，所述方法包括以下步骤：（a）接收包括使用所述光刻工艺制造的第一结构的衬底，所述第一结构包括第一层和第二层， 所述层具有导电材料的第一区域和非导电材料的第二区域; （b）接收指示第一目标相对位置的目标信号，该第一目标相对位置指示相对于第二层的第一区域和第二区域之间的边缘在第一区域和第一层的第二区域之间的边缘的目标位置 在所述平版印刷过程中的第一结构; （c）在用光辐射照射第一结构的同时检测散射辐射以获得第一信号; 和（d）基于第一信号和第一目标相对位置确定边缘放置误差参数。

    METHOD OF DETERMINING CRITICAL-DIMENSION-RELATED PROPERTIES, INSPECTION APPARATUS AND DEVICE MANUFACTURING METHOD
    19.
    发明申请
    METHOD OF DETERMINING CRITICAL-DIMENSION-RELATED PROPERTIES, INSPECTION APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
    确定关键尺寸相关特性的方法，检查装置和装置制造方法

    公开(公告)号：US20160116849A1

    公开(公告)日：2016-04-28

    申请号：US14892176

    申请日：2014-05-23

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Hugo Augustinus Joseph CRAMER ,  Arie Jeffrey DEN BOEF ,  Henricus Johannes Lambertus MEGENS ,  Maurits VAN DER SCHAAR ,  Te-Chih HUANG

    IPC: G03F7/20

    CPC classification number: G03F7/70133 ,  G03F7/70625 ,  G03F7/70683

    Abstract: A method of determining a critical-dimension-related property, such as critical dimension (CD) or exposure dose, includes illuminating each of a plurality of periodic targets having different respective critical dimension biases, measuring intensity of radiation scattered by the targets, recognizing and extracting each grating from the image, determining a differential signal, and determining the CD-related property based on the differential signal, the CD biases and knowledge that the differential signal approximates to zero at a 1:1 line-to-space ratio of such periodic targets. Use of the determined CD-related property to control a lithography apparatus in lithographic processing of subsequent substrates. In order to use just two CD biases, a calibration may use measurements on a “golden wafer” (i.e. a reference substrate) to determine the intensity gradient for each of the CD pairs, with known CDs. Alternatively, the calibration can be based upon simulation of the sensitivity of intensity gradient to CD.

    Abstract translation: 确定临界尺寸相关性质（例如临界尺寸（CD）或曝光剂量）的方法包括照射具有不同的相应临界尺寸偏差的多个周期性靶标中的每一个，测量由靶标散射的辐射的强度，识别和 从图像中提取每个光栅，确定差分信号，并且基于差分信号确定CD相关属性，CD偏差和差分信号以这样的1：1线间比接近零的知识 定期目标。 使用确定的CD相关属性来控制光刻设备在后续基板的光刻处理中。 为了仅使用两个CD偏移，校准可以使用“金色晶片”（即，参考基底）上的测量来确定具有已知CD的每个CD对的强度梯度。 或者，校准可以基于对CD的强度梯度的灵敏度的模拟。

    Lithographic Focus and Dose Measurement Using A 2-D Target
    20.
    发明申请
    Lithographic Focus and Dose Measurement Using A 2-D Target 有权
    使用2-D靶的光刻焦点和剂量测量

    公开(公告)号：US20140247434A1

    公开(公告)日：2014-09-04

    申请号：US14273707

    申请日：2014-05-09

    Applicant: ASML Netherlands B.V.

    Inventor： Christian Marinus LEEWIS ,  Hugo Augustinus Joseph CRAMER ,  Marcus Adrianus VAN DE KERKHOF ,  Johannes Anna QUAEDACKERS ,  Christine Corine MATTHEUS

    IPC: G03F7/20 ,  G03F1/38

    CPC classification number: G03F7/70641 ,  G03F1/38 ,  G03F7/706 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70675 ,  G03F7/70683

    Abstract: In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.

    Abstract translation: 为了确定曝光装置是否正在输出正确剂量的辐射，并且其投影系统正确地对准辐射，在掩模上使用测试图案将特定标记物印刷到基底上。 然后通过诸如散射仪的检查装置测量该标记，以确定焦点和剂量以及其它相关性质是否存在错误。 测试图案被配置为使得可以通过测量使用掩模曝光的图案的特性容易地确定聚焦和剂量的变化。 测试图案可以是二维图案，其中物理或几何性质（例如间距）在两个维度的每一个中是不同的。 测试图案也可以是由一维结构阵列组成的一维图案，该结构由至少一个子结构构成，该子结构与焦点和剂量不同地反应并产生暴露图案， 可以确定焦点和剂量。

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