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公开(公告)号:US10705437B2
公开(公告)日:2020-07-07
申请号:US16155424
申请日:2018-10-09
Applicant: ASML Netherlands B.V.
Inventor: Narjes Javaheri , Mohammadreza Hajiahmadi , Murat Bozkurt , Alberto Da Costa Assafrao , Marc Johannes Noot , Simon Gijsbert Josephus Mathijssen , Jin Lian
IPC: G03F7/20 , G01N21/47 , G01B11/24 , G01B11/30 , H01L23/544
Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.
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12.
公开(公告)号:US10310389B2
公开(公告)日:2019-06-04
申请号:US15942423
申请日:2018-03-30
Applicant: ASML NETHERLANDS B.V.
Inventor: Nitesh Pandey , Jin Lian , Samee Ur Rehman , Martin Jacobus Johan Jak
Abstract: Methods and apparatuses for measuring a plurality of structures formed on a substrate are disclosed. In one arrangement, a method includes obtaining data from a first measurement process. The first measurement process including individually measuring each of the plurality of structures to measure a first property of the structure. A second measurement process is used to measure a second property of each of the plurality of structures. The second measurement process includes illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure.
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