公开(公告)号：US09823572B2

公开(公告)日：2017-11-21

申请号：US14900110

申请日：2014-06-17

Applicant: ASML Netherlands B.V.

Inventor： Andrey Alexandrovich Nikipelov ,  Olav Waldemar Vladimir Frijns ,  Gosse Charles De Vries ,  Erik Roelof Loopstra ,  Vadim Yevgenyevich Banine ,  Pieter Willem Herman De Jager ,  Rilpho Ludovicus Donker ,  Han-Kwang Nienhuys ,  Borgert Kruizinga ,  Wouter Joep Engelen ,  Otger Jan Luiten ,  Johannes Antonius Gerardus Akkermans ,  Leonardus Adrianus Gerardus Grimminck ,  Vladimir Litvinenko

IPC: G03B27/42 ,  G03B27/58 ,  G03F7/20 ,  H01S3/09 ,  G01J1/04 ,  G02B1/06 ,  G02B5/20 ,  G21K1/10 ,  G02B26/02 ,  G01J1/26 ,  G01J1/42 ,  H05H7/04 ,  H01S3/00

CPC classification number: G03F7/70033 ,  G01J1/0407 ,  G01J1/0418 ,  G01J1/26 ,  G01J1/429 ,  G02B1/06 ,  G02B5/205 ,  G02B26/023 ,  G03F7/70008 ,  G03F7/7055 ,  G03F7/70558 ,  G03F7/7085 ,  G21K1/10 ,  H01S3/005 ,  H01S3/0085 ,  H01S3/0903 ,  H05H7/04

Abstract: A method of patterning lithographic substrates that includes using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates. The method further includes reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly, and applying variable attenuation to EUV radiation that has been output by the free electron laser in order to further control the power of EUV radiation delivered to the lithographic apparatus.

公开(公告)号：US11181835B2

公开(公告)日：2021-11-23

申请号：US16613551

申请日：2018-04-13

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： Sebastianus Adrianus Goorden ,  Johannes Antonius Gerardus Akkermans ,  Simon Reinald Huisman ,  Tamer Mohamed Tawfik Ahmed Mohamed Elazhary

IPC: G03F7/20 ,  G03F9/00 ,  G01B11/00

Abstract: Disclosed is a metrology sensor apparatus comprising: an illumination system operable to illuminate a metrology mark in on a substrate with illumination radiation; an optical collection system configured to collect scattered radiation, following scattering of the illumination radiation by the metrology mark; and a wavelength dependent spatial filter for spatially filtering the scattered radiation, the wavelength dependent spatial filter having a spatial profile dependent on the wavelength of the scattered radiation. The wavelength dependent spatial filter may comprise a dichroic filter operable to substantially transmit scattered radiation within a first wavelength range and substantially block scattered radiation within a second wavelength range and at least one second filter operable to substantially block scattered radiation at least within the first wavelength range and the second wavelength range.

公开(公告)号：US10437154B2

公开(公告)日：2019-10-08

申请号：US15789702

申请日：2017-10-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Andrey Alexandrovich Nikipelov ,  Olav Waldemar Vladimir Frijns ,  Erik Roelof Loopstra ,  Wouter Joep Engelen ,  Johannes Antonius Gerardus Akkermans

IPC: G03B27/42 ,  H01J31/48 ,  G03F7/20 ,  H01S3/09 ,  G01J1/04 ,  G02B1/06 ,  G02B5/20 ,  G21K1/10 ,  G02B26/02 ,  G01J1/26 ,  G01J1/42 ,  H05H7/04 ,  H01S3/00

Abstract: A method of patterning lithographic substrates, the method comprising using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further comprises reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.

公开(公告)号：US09728931B2

公开(公告)日：2017-08-08

申请号：US15035674

申请日：2014-11-27

Applicant: ASML Netherlands B.V.

Inventor： Andrey Alexandrovich Nikipelov ,  Vadim Yevgenyevich Banine ,  Pieter Willem Herman De Jager ,  Gosse Charles De Vries ,  Olav Waldemar Vladimir Frijns ,  Leonardus Adrianus Gerardus Grimminck ,  Andelko Katalenic ,  Johannes Antonius Gerardus Akkermans ,  Erik Loopstra ,  Wouter Joep Engelen ,  Petrus Rutgerus Bartraij ,  Teis Johan Coenen ,  Wilhelmus Patrick Elisabeth Maria Op'T Root

IPC: H01S3/09 ,  H01J1/34 ,  H05H7/08

CPC classification number: H01S3/0903 ,  H01J1/34 ,  H05H7/08 ,  H05H2007/084

Abstract: An injector arrangement for providing an electron beam. The injector arrangement comprises a first injector for providing electron bunches, and a second injector for providing electrons bunches. The injector arrangement is operable in a first mode in which the electron beam comprises electron bunches provided by the first injector only and a second mode in which the electron beam comprises electron bunches provided by the second injector only.