公开(公告)号：EP3514630A1

公开(公告)日：2019-07-24

申请号：EP19152558.3

申请日：2014-06-17

Applicant: ASML Netherlands B.V.

Inventor： NIKIPELOV, Andrey ,  FRIJNS, Olav Waldemar Vladimir ,  DE VRIES, Gosse Charles ,  LOOPSTRA, Erik Roelof ,  BANINE, Vadim Yevgenyevich ,  DE JAGER, Pieter Willem Herman ,  DONKER, Rilpho Ludovicus ,  NIENHUYS, Han-Kwang ,  KRUIZINGA, Borgert ,  ENGELEN, Wouter Joep ,  LUITEN, Otger Jan ,  AKKERMANS, Johannes Antonius Gerardus ,  GRIMMINCK, Leonardus Adrianus Gerardus ,  LITVINENKO, Vladimir

IPC: G03F7/20 ,  H05H7/04 ,  G01J1/26 ,  G02B1/06 ,  G02B5/20 ,  G01J1/04 ,  G21K1/10 ,  H01S3/09 ,  G01J1/42 ,  G02B26/02 ,  H01S3/00

Abstract: A method of patterning lithographic substrates, the method comprising using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further comprises reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.