公开(公告)号：EP3312672A1

公开(公告)日：2018-04-25

申请号：EP16195047.2

申请日：2016-10-21

Applicant: ASML Netherlands B.V.

Inventor： KOU, Weitian ,  YPMA, Alexander ,  HAUPTMANN, Marc ,  KUPERS, Michiel ,  VERGAIJ-HUIZER, Lydia, Marianna ,  WALLERBOS, Erik, Johannes, Maria ,  DELVIGNE, Erik, Henri, Adriaan

IPC: G03F20060101

CPC classification number: G03F7/70483 ,  G03F9/70

Abstract: Disclosed is a method of determining a correction for a process parameter related to a lithographic process on a substrate and associated apparatuses. The lithographic process comprises a plurality of runs during each one of which a pattern is applied to one or more substrates. The method comprises obtaining pre-exposure metrology data describing a property of the substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning to the substrate, a class membership status from a plurality of classes, based on said pre-exposure metrology data; and determining the correction for the process parameter based on said class membership status and said post-exposure metrology data.

Abstract translation: 公开了一种确定与基板和相关装置上的光刻工艺有关的工艺参数的校正的方法。 光刻过程包括在其中每一个过程中将图案施加到一个或多个衬底的多次运行。 该方法包括获得描述衬底特性的预曝光度量数据; 获得曝光后测量数据，所述曝光后测量数据包括已经在一个或多个先前曝光的基板上执行的所述处理参数的一个或多个测量值; 基于所述预曝光度量数据，从多个类别向所述衬底分配类别成员资格状态; 以及基于所述类别成员状态和所述曝光后测量数据来确定对所述过程参数的校正。