公开(公告)号：US20180203367A1

公开(公告)日：2018-07-19

申请号：US15834763

申请日：2017-12-07

Applicant: ASML Netherlands B.V.

Inventor： Martin Jacobus Johan JAK

IPC: G03F7/20

CPC classification number: G03F7/70516 ,  G01N21/9501 ,  G01N21/956 ,  G03F7/70483 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7088

Abstract: An overlay measurement (OV) is based on asymmetry in a diffraction spectrum of target structures formed by a lithographic process. Stack difference between target structures can be perceived as grating imbalance (GI), and the accuracy of the overlay measurement may be degraded. A method of predicting GI sensitivity is performed using first and second images (45+, 45−) of the target structure using opposite diffraction orders. Regions (ROI) of the same images are used to measure overlay. Multiple local measurements of symmetry (S) and asymmetry (A) of intensity between the opposite diffraction orders are made, each local measurement of symmetry and asymmetry corresponding to a particular location on the target structure. Based on a statistical analysis of the local measurements of symmetry and asymmetry values, a prediction of sensitivity to grating imbalance is obtained. This can be used to select better measurement recipes, and/or to correct errors caused by grating imbalance.

公开(公告)号：US20130148121A1

公开(公告)日：2013-06-13

申请号：US13687569

申请日：2012-11-28

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey DEN BOEF ,  Kaustuve BHATTACHARYYA ,  Martin Jacobus Johan JAK ,  Michael KUBIS

IPC: G01B11/00

CPC classification number: G01B11/24 ,  G01B11/14 ,  G03F7/70633 ,  G03F9/7003 ,  G03F9/7049 ,  G03F9/7088 ,  G03F9/7092

Abstract: Disclosed is a device manufacturing method, and accompanying inspection and lithographic apparatuses. The method comprises measuring on the substrate a property such as asymmetry of a first overlay marker and measuring on the substrate a property such as asymmetry of an alignment marker. In both cases the asymmetry is determined. The position of the alignment marker on the substrate is then determined using an alignment system and the asymmetry information of the alignment marker and the substrate aligned using this measured position. A second overlay marker is then printed on the substrate; and a lateral overlay measured on the substrate of the second overlay marker with respect to the first overlay marker using the determined asymmetry information of the first overlay marker.

Abstract translation: 公开了一种器件制造方法，以及伴随的检查和光刻设备。 该方法包括在衬底上测量诸如第一覆盖标记的不对称性和在衬底上测量诸如对准标记的不对称性的特性。 在这两种情况下，确定不对称性。 然后使用对准系统确定对准标记在衬底上的位置，并使用该测量位置对准对准标记和衬底的不对称信息。 然后将第二覆盖标记印刷在基底上; 以及使用所确定的所述第一覆盖标记的不对称信息相对于所述第一覆盖标记在所述第二覆盖标记的基板上测量的横向覆盖。

公开(公告)号：US20210026256A1

公开(公告)日：2021-01-28

申请号：US17039308

申请日：2020-09-30

Applicant: ASML Netherlands B.V.

Inventor： Martin Jacobus Johan JAK ,  Kaustuve BHATTACHARYYA

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L23/544

Abstract: An overlay metrology target (T) is formed by a lithographic process. A first image (740(0)) of the target structure is obtained using with illuminating radiation having a first angular distribution, the first image being formed using radiation diffracted in a first direction (X) and radiation diffracted in a second direction (Y). A second image (740(R)) of the target structure using illuminating radiation having a second angular illumination distribution which the same as the first angular distribution, but rotated 90 degrees. The first image and the second image can be used together so as to discriminate between radiation diffracted in the first direction and radiation diffracted in the second direction by the same part of the target structure. This discrimination allows overlay and other asymmetry-related properties to be measured independently in X and Y, even in the presence of two-dimensional structures within the same part of the target structure.

公开(公告)号：US20190094703A1

公开(公告)日：2019-03-28

申请号：US16135197

申请日：2018-09-19

Applicant: ASML Netherlands B.V.

Inventor： Martin Jacobus Johan JAK ,  Simon Gijsbert Josephus MATHIJSSEN ,  Kaustuve BHATTACHARYYA ,  Won-Jae JANG ,  Jinmoo BYUN

IPC: G03F7/20

Abstract: A method to determine a patterning process parameter, the method comprising: for a target, calculating a first value for an intermediate parameter from data obtained by illuminating the target with radiation comprising a central wavelength; for the target, calculating a second value for the intermediate parameter from data obtained by illuminating the target with radiation comprising two different central wavelengths; and calculating a combined measurement for the patterning process parameter based on the first and second values for the intermediate parameter.

公开(公告)号：US20180364036A1

公开(公告)日：2018-12-20

申请号：US15988681

申请日：2018-05-24

Applicant: ASML Netherlands B.V.

Inventor： Martin Jacobus Johan JAK ,  Richard Quintanilha ,  Arie Jeffrey Den Boef ,  Michael Kubis

IPC: G01B11/30 ,  G01B15/08 ,  G03F7/20

Abstract: A method of determining an edge roughness parameter has the steps: (1010) controlling a radiation system to provide a spot of radiation at a measurement position for receiving a substrate; (1020) receiving a measurement signal from a sensor for measuring intensity of a forbidden diffraction order (such as a second order) being diffracted by a metrology target at the measurement position when the metrology target is illuminated by the spot of radiation, the metrology target comprising a repetitive pattern being configured by configuration of a linewidth/pitch ratio (of about 0.5) to control an amount of destructive interference that leads to forbidding of the diffraction order, the sensor being configured to provide the measurement signal based on the measured intensity; and (1040) determining an edge roughness parameter based on the measured intensity of the forbidden diffraction order.

公开(公告)号：US20180173112A1

公开(公告)日：2018-06-21

申请号：US15839285

申请日：2017-12-12

Applicant: ASML Netherlands B.V.

Inventor： Martin Jacobus Johan JAK ,  Kaustuve BHATTACHARYYA

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L23/544

Abstract: An overlay metrology target (T) is formed by a lithographic process. A first image (740(0)) of the target structure is obtained using with illuminating radiation having a first angular distribution, the first image being formed using radiation diffracted in a first direction (X) and radiation diffracted in a second direction (Y). A second image (740(R)) of the target structure using illuminating radiation having a second angular illumination distribution which the same as the first angular distribution, but rotated 90 degrees. The first image and the second image can be used together so as to discriminate between radiation diffracted in the first direction and radiation diffracted in the second direction by the same part of the target structure. This discrimination allows overlay and other asymmetry-related properties to be measured independently in X and Y, even in the presence of two-dimensional structures within the same part of the target structure.

公开(公告)号：US20170206649A1

公开(公告)日：2017-07-20

申请号：US15473879

申请日：2017-03-30

Applicant: ASML Netherlands B.V.

Inventor： Murat BOZKURT ,  Martin Jacobus Johan JAK ,  Patricius Aloysius Jacobus TINNEMANS

IPC: G06T7/00 ,  G03F7/20 ,  G06T7/11

CPC classification number: G06T7/0004 ,  G03F7/705 ,  G03F7/70591 ,  G03F7/70633 ,  G06T7/11 ,  G06T2207/10061 ,  G06T2207/20224 ,  G06T2207/30148

Abstract: A property of a target structure is measured based on intensity of an image of the target. The method includes (a) obtaining an image of the target structure; (b) defining a plurality of candidate regions of interest, each candidate region of interest comprising a plurality of pixels in the image; (c) defining an optimization metric value for the candidate regions of interest based at least partly on signal values of pixels within the region of interest; (d) defining a target signal function which defines a contribution of each pixel in the image to a target signal value. The contribution of each pixel depends on (i) which candidate regions of interest contain that pixel and (ii) optimization metric values of those candidate regions of interest.

公开(公告)号：US20170184977A1

公开(公告)日：2017-06-29

申请号：US15387431

申请日：2016-12-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Martin Jacobus Johan JAK ,  Arie Jeffrey DEN BOEF ,  Martin EBERT

IPC: G03F7/20 ,  G01N21/95 ,  G01B11/26

CPC classification number: G03F7/70191 ,  G01B11/26 ,  G01N21/21 ,  G01N21/4788 ,  G01N21/9501 ,  G02B5/1819 ,  G02B5/1823 ,  G02B27/4255 ,  G02B27/4272 ,  G03F7/70616 ,  G03F7/70633 ,  G03F7/70683 ,  G03F7/7085 ,  G03F9/7049 ,  G03F9/7076

Abstract: A method, involving illuminating at least a first periodic structure of a metrology target with a first radiation beam having a first polarization, illuminating at least a second periodic structure of the metrology target with a second radiation beam having a second different polarization, combining radiation diffracted from the first periodic structure with radiation diffracted from the second periodic structure to cause interference, detecting the combined radiation using a detector, and determining a parameter of interest from the detected combined radiation.

公开(公告)号：US20170068173A1

公开(公告)日：2017-03-09

申请号：US15355334

申请日：2016-11-18

Applicant: ASML Netherlands B.V.

Inventor： Martin Jacobus Johan JAK ,  Armand Eugene Albert KOOLEN ,  Hendrik Jan Hidde SMILDE

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/70483 ,  G03F7/70633 ,  G03F7/70683

Abstract: A metrology target formed by a lithographic process on a substrate includes a plurality of component gratings. Images of the target are formed using +1 and −1 orders of radiation diffracted by the component gratings. Regions of interest (ROIs) in the detected image are identified corresponding the component gratings. Intensity values within each ROI are processed and compared between images, to obtain a measurement of asymmetry and hence overlay error. Separation zones are formed between the component gratings and design so as to provide dark regions in the image. In an embodiment, the ROIs are selected with their boundaries falling within the image regions corresponding to the separation zones. By this measure, the asymmetry measurement is made more tolerant of variations in the position of the ROI. The dark regions also assist in recognition of the target in the images.

Abstract translation: 由基板上的光刻工艺形成的测量目标包括多个分量光栅。 使用由分量光栅衍射的+1和-1次辐射来形成目标的图像。 识别检测到的图像中的感兴趣区域（ROI）对应于分量光栅。 在每个ROI内的强度值被处理并在图像之间进行比较，以获得不对称性的测量并因此获得覆盖误差。 在分量光栅之间形成分离区并设计成在图像中提供暗区。 在一个实施例中，选择其边界落入对应于分离区域的图像区域内的ROI。 通过这种措施，使不对称测量更加容忍ROI的位置的变化。 黑暗的地区也有助于识别图像中的目标。