公开(公告)号：US20210407112A1

公开(公告)日：2021-12-30

申请号：US17289874

申请日：2019-09-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Antoine Gaston Marie KIERS ,  Vadim Yourievich TIMOSHKOV ,  Hermanus Adrianus DILLEN ,  Yichen ZHANG ,  Te-Sheng WANG ,  Tzu-Chao CHEN

IPC: G06T7/33 ,  G06T7/00

Abstract: A method for determining an image-metric of features on a substrate, the method including: obtaining a first image of a plurality of features on a substrate; obtaining one or more further images of a corresponding plurality of features on the substrate, wherein at least one of the one or more further images is of a different layer of the substrate than the first image; generating aligned versions of the first and one or more further images by performing an alignment process on the first and one or more further images; and calculating an image-metric in dependence on a comparison of the features in the aligned version of the first image and the corresponding features in the one or more aligned versions of the one or more further images.

公开(公告)号：US20200278613A1

公开(公告)日：2020-09-03

申请号：US16875643

申请日：2020-05-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng WANG ,  Xiang Wan

IPC: G03F7/20

Abstract: A process of characterizing a process window of a patterning process, the process including: obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a set of the features, the set of features being selected from among the features according to sensitivity of the respective features to variation in one or more process characteristics of the patterning process; patterning one or more substrates under varying process characteristics of the patterning process; and determining, for each of the variations in the process characteristics, whether at least some of the set of features yielded unacceptable patterned structures on the one or more substrates at corresponding inspection locations.

公开(公告)号：US20200089122A1

公开(公告)日：2020-03-19

申请号：US16467675

申请日：2017-12-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng WANG

IPC: G03F7/20

Abstract: A method including: simulating an image or characteristics thereof, using characteristics of a design layout and of a patterning process, determining deviations between the image or characteristics thereof and the design layout or characteristics thereof; aligning a metrology image obtained from a patterned substrate and the design layout based on the deviations, wherein the patterned substrate includes a pattern produced from the design layout using the patterning process; and determining a parameter of a patterned substrate from the metrology image aligned with the design layout.

公开(公告)号：US20190146358A1

公开(公告)日：2019-05-16

申请号：US16300314

申请日：2017-04-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Marinus JOCHEMSEN ,  Scott Anderson MIDDLEBROOKS ,  Stefan HUNSCHE ,  Te-Sheng WANG

IPC: G03F7/20

Abstract: A method including obtaining an image of a plurality of structures on a substrate, wherein each of the plurality of structures is formed onto the substrate by transferring a corresponding pattern of a design layout; obtaining, from the image, a displacement for each of the structures with respect to a reference point for that structure; and assigning each of the structures into one of a plurality of groups based on the displacement.

公开(公告)号：US20180321596A1

公开(公告)日：2018-11-08

申请号：US15764875

申请日：2016-09-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng WANG

IPC: G03F7/20

CPC classification number: G03F7/70625 ,  G03F7/70558 ,  G03F7/70641 ,  H01L21/0274 ,  H01L22/12

Abstract: A method including measuring a value of a directly measureable processing parameter of a patterning process from a portion of a substrate produced by the patterning process; obtaining a relationship between the directly measureable processing parameter and a not directly measureable processing parameter; and determining a value of the not directly measureable processing parameter from the value of the directly measureable processing parameter and the relationship.