公开(公告)号：US12265229B2

公开(公告)日：2025-04-01

申请号：US17768851

申请日：2020-09-30

Applicant: ASML Netherlands B.V.

Inventor： Zili Zhou ,  Janneke Ravensbergen

IPC: G02B27/09

Abstract: Disclosed is a pupil shaping arrangement for obtaining a defined pupil intensity profile for a metrology illumination beam configured for use in a metrology application. The pupil shaping arrangement comprises an engineered diffuser (ED) having a defined far-field profile configured to impose said defined pupil intensity profile on said metrology illumination beam. The pupil shaping arrangement may further comprise a multimode fiber (MMF) and be configured to reduce spatial coherence of coherent radiation.

公开(公告)号：US12209994B2

公开(公告)日：2025-01-28

申请号：US17634711

申请日：2020-07-22

Applicant: ASML Netherlands B.V.

Inventor： Zili Zhou ,  Mustafa Ümit Arabul ,  Coen Adrianus Verschuren

IPC: G01N29/24 ,  G01N29/34 ,  G03F9/00

Abstract: The disclosure relates to determining information about a target structure formed on a substrate using a lithographic process. In one arrangement, a cantilever probe is provided having a cantilever arm and a probe element. The probe element extends from the cantilever arm towards the target structure. Ultrasonic waves are generated in the cantilever probe. The ultrasonic waves propagate through the probe element into the target structure and reflect back from the target structure into the probe element or into a further probe element extending from the cantilever arm. The reflected ultrasonic waves are detected and used to determine information about the target structure.

公开(公告)号：US11385553B2

公开(公告)日：2022-07-12

申请号：US17306670

申请日：2021-05-03

Applicant: ASML Netherlands B.V.

Inventor： Zili Zhou ,  Nitesh Pandey ,  Olger Victor Zwier ,  Patrick Warnaar ,  Maurits Van Der Schaar ,  Elliott Gerard McNamara ,  Arie Jeffrey Den Boef ,  Paul Christiaan Hinnen ,  Murat Bozkurt ,  Joost Jeroen Ottens ,  Kaustuve Bhattacharyya ,  Michael Kubis

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F9/00

Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.

公开(公告)号：US10599047B2

公开(公告)日：2020-03-24

申请号：US15988677

申请日：2018-05-24

Applicant: ASML Netherlands B.V.

Inventor： Janneke Ravensbergen ,  Nitesh Pandey ,  Zili Zhou ,  Armand Eugene Albert Koolen ,  Sebastianus Adrianus Goorden ,  Bastiaan Onne Fagginger Auer ,  Simon Gijsbert Josephus Mathijssen

IPC: G03F7/20 ,  G01N21/95 ,  G01N21/956 ,  G01N21/47 ,  G01B11/27

Abstract: A metrology apparatus is disclosed that measures a structure formed on a substrate to determine a parameter of interest. The apparatus comprises an optical system configured to focus radiation onto the structure and direct radiation after reflection from the structure onto a detector, wherein: the optical system is configured such that the detector detects a radiation intensity resulting from interference between radiation from at least two different points in a pupil plane field distribution, wherein the interference is such that a component of the detected radiation intensity containing information about the parameter of interest is enhanced relative to one or more other components of the detected radiation intensity.

公开(公告)号：US10423077B2

公开(公告)日：2019-09-24

申请号：US16223372

申请日：2018-12-18

Applicant: ASML Netherlands B.V.

Inventor： Nitesh Pandey ,  Zili Zhou ,  Armand Eugene Albert Koolen ,  Gerbrand Van Der Zouw

IPC: G03B27/42 ,  G01N21/55 ,  G03F7/20 ,  G01B11/27 ,  G01N21/47

Abstract: Disclosed is a metrology apparatus for measuring a parameter of a lithographic process, and associated computer program and method. The metrology apparatus comprises an optical system for measuring a target on a substrate by illuminating the target with measurement radiation and detecting the measurement radiation scattered by the target; and an array of lenses. Each lens of the array is operable to focus the scattered measurement radiation onto a sensor, said array of lenses thereby forming an image on the sensor which comprises a plurality of sub-images, each sub-image being formed by a corresponding lens of the array of lenses. The resulting plenoptic image comprises image plane information from the sub-images, wavefront distortion information (from the relative positions of the sub-images) and pupil information from the relative intensities of the sub-images.