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    SINTERED SEMICONDUCTOR MATERIAL
    12.
    发明申请
    SINTERED SEMICONDUCTOR MATERIAL 有权
    烧结半导体材料

    公开(公告)号：US20090039319A1

    公开(公告)日：2009-02-12

    申请号：US12184703

    申请日：2008-08-01

    Applicant: Alain Straboni

    Inventor： Alain Straboni

    IPC: H01B1/06

    CPC classification number: H01L31/1804 ,  H01L31/03529 ,  H01L31/04 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A method of forming a material from a source material including the following steps of grinding the source material to get powders if the source material is not already in the form of powders; sintering the powders with at least one compression step and one thermal processing step; and purifying the material with a gas flow, the gas flow passing through the porosity channels of the material.

    Abstract translation: 一种从源材料形成材料的方法，包括以下步骤：如果源材料不是粉末形式，则研磨源材料以得到粉末; 用至少一个压缩步骤和一个热处理步骤烧结粉末; 并用气流净化材料，气流通过材料的孔隙率通道。

    Sintered semiconductor material
    13.
    发明申请
    Sintered semiconductor material 有权
    烧结半导体材料

    公开(公告)号：US20070178675A1

    公开(公告)日：2007-08-02

    申请号：US10552548

    申请日：2004-04-09

    Applicant: Alain Straboni

    Inventor： Alain Straboni

    IPC: H01L21/20 ,  H01L21/36

    CPC classification number: H01L31/1804 ,  H01L31/02363 ,  Y02E10/547 ,  Y02P70/521

    Abstract: The invention relates to a method for forming a semiconductor material obtained by sintering powders and to a semiconductor material. The method comprises a compression and heat treatment stage such that one part of the powder is melted or becomes viscous. The material can be used in the photovoltaic field.

    Abstract translation: 本发明涉及通过烧结粉末和半导体材料形成半导体材料的方法。 该方法包括压缩和热处理阶段，使得一部分粉末熔化或变得粘稠。 该材料可用于光伏领域。

    Process for producing an electrically conductive diffusion barrier at the metal/silicon interface of a MOS transistor
    15.
    发明授权
    Process for producing an electrically conductive diffusion barrier at the metal/silicon interface of a MOS transistor 失效
    在MOS晶体管的金属/硅界面处制造导电扩散阻挡层的工艺

    公开(公告)号：US5300455A

    公开(公告)日：1994-04-05

    申请号：US805839

    申请日：1991-12-13

    Applicant: Bernard Vuillermoz ,  Mouloud Bakli ,  Alain Straboni

    Inventor： Bernard Vuillermoz ,  Mouloud Bakli ,  Alain Straboni

    IPC: H01L21/28 ,  H01L21/285 ,  H01L21/318 ,  H01L21/336 ,  H01L21/768 ,  H01L23/532 ,  H01L29/49 ,  H01L29/78 ,  H01L21/441 ,  H01L21/324

    CPC classification number: H01L29/66515 ,  H01L21/28061 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3185 ,  H01L23/53257 ,  H01L29/4941 ,  H01L2924/0002

    Abstract: An integrated circuit such as a MOS transistor, having an electrically conductive diffusion barrier at the metal/silicon interface and a method of manufacture therefor is disclosed. The metal/silicon interface is formed by selective metal deposition onto silicon. According to the method, the interface is subjected to a nitrogen-based plasma during a period of at least five minutes. The interface is brought to a temperature greater than 500.degree. C. during this period, in order to create a diffusion barrier comprising a silicon nitride layer. The interface is then subjected to an annealing treatment under a neutral atmosphere so as to remove the nitrogen previously introduced into the metal. The diffusion barrier forms a linking and protecting interface between each source drain or gate zone of the MOS transistor and the corresponding layer of metal covering the latter.

    Abstract translation: 公开了一种在金属/硅界面处具有导电扩散阻挡层的诸如MOS晶体管的集成电路及其制造方法。 通过在硅上选择性金属沉积形成金属/硅界面。 根据该方法，在至少5分钟的时间内对该界面进行氮系等离子体处理。 在该时间段期间，界面的温度高于500摄氏度，以形成包含氮化硅层的扩散阻挡层。 然后在中性气氛下对界面进行退火处理，以除去先前导入金属的氮。 扩散阻挡层在MOS晶体管的每个源极漏极或栅极区域与覆盖该MOS晶体管的相应金属层之间形成连接和保护界面。

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