公开(公告)号：US20210134972A1

公开(公告)日：2021-05-06

申请号：US17089047

申请日：2020-11-04

Applicant: Applied Materials, Inc.

Inventor： Yixiong Yang ,  Jacqueline S. Wrench ,  Srinivas Gandikota ,  Yongjing Lin ,  Steven C.H. Hung ,  Shih Chung Chen ,  Haoyan Sha ,  Chi-Chou Lin

IPC: H01L29/49 ,  H01L29/51 ,  H01L21/28

Abstract: Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiment comprise MoN as a PMOS work function material. Some embodiments comprise TiSiN as a high-κ capping layer. Some embodiments provide improved PMOS bandedge performance. Some embodiments provide improved PMOS bandedge performance with reduced EOT penalty.

公开(公告)号：US09947578B2

公开(公告)日：2018-04-17

申请号：US15358690

申请日：2016-11-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Yu Lei ,  Vikash Banthia ,  Kai Wu ,  Xinyu Fu ,  Yi Xu ,  Kazuya Daito ,  Feiyue Ma ,  Pulkit Agarwal ,  Chi-Chou Lin ,  Dien-Yeh Wu ,  Guoqiang Jian ,  Wei V. Tang ,  Jonathan Bakke ,  Mei Chang ,  Sundar Ramamurthy

IPC: H01L21/4763 ,  H01L21/768 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  H01L21/311 ,  C23C16/02 ,  C23C16/04 ,  C23C16/06 ,  C23C16/08 ,  C23C16/505 ,  C23C16/54

CPC classification number: H01L21/76843 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/06 ,  C23C16/08 ,  C23C16/4401 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/46 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76877

Abstract: Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.

公开(公告)号：US12062545B2

公开(公告)日：2024-08-13

申请号：US17339454

申请日：2021-06-04

Applicant: Applied Materials, Inc.

Inventor： Ilanit Fisher ,  Chi-Chou Lin ,  Kedi Wu ,  Wen Ting Chen ,  Shih Chung Chen ,  Srinivas Gandikota ,  Mandyam Sriram ,  Chenfei Shen ,  Naomi Yoshida ,  He Ren

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/455 ,  H01L21/02

CPC classification number: H01L21/28568 ,  C23C16/0227 ,  C23C16/04 ,  C23C16/14 ,  C23C16/45553 ,  H01L21/02068

Abstract: Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.

公开(公告)号：US11830725B2

公开(公告)日：2023-11-28

申请号：US17153450

申请日：2021-01-20

Applicant: Applied Materials, Inc.

Inventor： Naomi Yoshida ,  He Ren ,  Hao Jiang ,  Chenfei Shen ,  Chi-Chou Lin ,  Hao Chen ,  Xuesong Lu ,  Mehul B. Naik

IPC: H01L21/02 ,  H01L21/28 ,  B08B5/02 ,  H01L29/66 ,  H01L21/3205

CPC classification number: H01L21/02057 ,  B08B5/02 ,  H01L21/28026 ,  H01L21/32051 ,  H01L29/66795

Abstract: Embodiments of the present disclosure generally relate to methods of cleaning a structure and methods of depositing a capping layer in a structure. The method of cleaning a structure includes suppling a cleaning gas, including a first gas including nitrogen (N) and a second gas including fluorine (F), to a bottom surface of a structure. The cleaning gas removes unwanted metal oxide and etch residue from the bottom surface of the structure. The method of depositing a capping layer includes depositing the capping layer over the bottom surface of the structure. The methods described herein reduce the amount of unwanted metal oxides and residue, which improves adhesion of deposited capping layers.

公开(公告)号：US20230313378A1

公开(公告)日：2023-10-05

申请号：US17709931

申请日：2022-03-31

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Lei Zhou ,  Muhannad Mustafa ,  Shih Chung Chen ,  Zhihui Liu ,  Chi-Chou Lin ,  Bin Cao ,  Janardhan Devrajan ,  Mario D. Silvetti ,  Mandyam Sriram

IPC: C23C16/458 ,  C23C16/455

CPC classification number: C23C16/4586 ,  C23C16/45544

Abstract: Substrate support, substrate support assemblies and process chambers comprising same are described. The substrate support has a thermally conductive body with a top surface, a bottom surface and an outer edge, and a plurality of long edge purge channel outlet opening at the outer edge of the thermally conductive body. The substrate support is configured to support a substrate to be processed on a top surface of the substrate support. The top surface of the thermally conductive body may have a ceramic coating. Each of the plurality of purge channel outlet is in fluid communication with a long edge purge channel. The long edge purge channel is coated with a long edge purge channel coating. A substrate support assembly includes the substrate support and the support post coupled to the substrate support. The processing chamber include a chamber body and the substrate support within the chamber body.

公开(公告)号：US20230113514A1

公开(公告)日：2023-04-13

申请号：US17541702

申请日：2021-12-03

Applicant: Applied Materials, Inc.

Inventor： Shih Chung Chen ,  Yongjing Lin ,  Chi-Chou Lin ,  Zhiyong Wang ,  Chih-Hsun Hsu ,  Mandyam Sriram ,  Tza-Jing Gung

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/02

Abstract: Processing methods described herein comprise forming a metal gate film on a narrow feature and a wide feature and depositing a hard mask on the metal gate film. The hard mask forms on the metal gate film at a top, bottom and sidewalls of the wide feature and on a top of the narrow feature to cover the metal gate film. Some processing methods comprise oxidizing the metal gate film on the narrow feature to convert a portion of the metal gate film to a metal oxide film. Some processing methods comprise etching the metal oxide film from the narrow feature to leave a gradient etch profile. Some processing methods comprise filling the narrow feature and the wide feature with a gap fill material comprising one or more of a metal nitride, titanium nitride (TiN) or titanium oxynitride (TiON), the gap fill material substantially free of seams and voids.