公开(公告)号：US20230386833A1

公开(公告)日：2023-11-30

申请号：US17824889

申请日：2022-05-25

Applicant: Applied Materials, Inc.

Inventor： Liqi Wu ,  Feng Q. Liu ,  Bhaskar Jyoti Bhuyan ,  James Hugh Connolly ,  Zhimin Qi ,  Jie Zhang ,  Wei Dou ,  Aixi Zhang ,  Mark Saly ,  Jiang Lu ,  Rongjun Wang ,  David Thompson ,  Xianmin Tang

IPC: H01L21/027 ,  C23C14/16 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/0271 ,  C23C14/16 ,  H01L21/32139 ,  H01L21/76877 ,  H01L21/76816 ,  H01L21/76831

Abstract: Embodiments of the disclosure relate to methods for selectively removing metal material from the top surface and sidewalls of a feature. The metal material which is covered by a flowable polymer material remains unaffected. In some embodiments, the metal material is formed by physical vapor deposition resulting in a relatively thin sidewall thickness. Any metal material remaining on the sidewall after removal of the metal material from the top surface may be etched by an additional etch process. The resulting metal layer at the bottom of the feature facilitates selective metal gapfill of the feature.

公开(公告)号：US10559578B2

公开(公告)日：2020-02-11

申请号：US15995693

申请日：2018-06-01

Applicant: Applied Materials, Inc.

Inventor： Jacqueline S. Wrench ,  Jing Zhou ,  Fuqun Grace Vasiknanonte ,  Jiang Lu ,  Paul F. Ma ,  Nobuyuki Sasaki ,  Sree Rangasai V. Kesapragada ,  Sang Ho Yu ,  Mei Chang

IPC: H01L21/00 ,  H01L27/11551 ,  H01L27/11578 ,  H01L21/285 ,  H01L21/8229 ,  H01L21/8239 ,  H01L21/822

Abstract: Embodiments of the invention provide methods of processing a substrate having a stack of spaced oxide layers with gaps between the oxide layers. A metallic nucleation layer is formed in the gaps and a cobalt film is deposited on the nucleation layer to form wordlines.

公开(公告)号：US10453657B2

公开(公告)日：2019-10-22

申请号：US15642002

申请日：2017-07-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Daping Yao ,  Hyman W. H. Lam ,  John C. Forster ,  Jiang Lu ,  Can Xu ,  Dien-Yeh Wu ,  Paul F. Ma ,  Mei Chang

IPC: H01J37/32 ,  C23C16/513 ,  C23C16/505 ,  C23C16/52 ,  C23C16/455 ,  C23C16/509 ,  C23C16/06

Abstract: Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.

公开(公告)号：US20180240755A1

公开(公告)日：2018-08-23

申请号：US15960440

申请日：2018-04-23

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Paul F. Ma ,  Jiang Lu ,  Ben-Li Sheu

IPC: H01L23/532 ,  C23C16/455 ,  C23C16/34 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L23/53238 ,  C23C16/34 ,  C23C16/45536 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising CoMn(N) and, optionally, an adhesion layer.

公开(公告)号：US10665542B2

公开(公告)日：2020-05-26

申请号：US15960440

申请日：2018-04-23

Applicant: Applied Materials, Inc.

Inventor： Sang Ho Yu ,  Paul F. Ma ,  Jiang Lu ,  Ben-Li Sheu

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/76 ,  H01L23/532 ,  H01L21/768 ,  H01L21/285 ,  C23C16/34 ,  C23C16/455

Abstract: Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising CoMn(N) and, optionally, an adhesion layer.

公开(公告)号：US10043709B2

公开(公告)日：2018-08-07

申请号：US14931417

申请日：2015-11-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Hua Ai ,  Jiang Lu ,  Avgerinos V. Gelatos ,  Paul F. Ma ,  Sang Ho Yu ,  Feng Q. Liu ,  Xinyu Fu ,  Weifeng Ye

IPC: H01L21/768 ,  C23C16/06 ,  H01L21/285 ,  C23C16/04 ,  H01L23/532

Abstract: Methods for selectively depositing a cobalt layer are provided herein. In some embodiments, methods for selectively depositing a cobalt layer include: exposing a substrate to a first process gas to passivate an exposed dielectric surface, wherein the substrate comprises a dielectric layer having an exposed dielectric surface and a metal layer having an exposed metal surface; and selectively depositing a cobalt layer atop the exposed metal surface using a thermal deposition process.

公开(公告)号：US20250125195A1

公开(公告)日：2025-04-17

申请号：US18378828

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Xinke Wang ,  Liqi Wu ,  Qihao Zhu ,  Mark Saly ,  Jiang Lu ,  John Sudijono ,  David Thompson

IPC: H01L21/768 ,  H01L21/02

Abstract: Embodiments of the disclosure relate to methods using an oligomer film to protect a substrate surface. The oligomer film is formed on the substrate surface with a first feature and a second feature each having a feature depth. The first feature has a first critical dimension (CD) and the second feature has a second CD. The semiconductor substrate surface is exposed to one or more monomers to form the oligomer film, and the oligomer film forms selectively on the bottom and fills a portion of the feature depth. The oligomer film fills the feature depth to substantially the same or the same height in each of the first feature and the second feature. Methods of forming semiconductor devices using the oligomer film are also disclosed.

公开(公告)号：US10752990B2

公开(公告)日：2020-08-25

申请号：US15471291

申请日：2017-03-28

Applicant: Applied Materials, Inc.

Inventor： Daping Yao ,  Kenric Choi ,  Xiaoxiong Yuan ,  Jiang Lu ,  Can Xu ,  Paul F. Ma ,  Mei Chang

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/448 ,  C23C16/18 ,  F16K31/12 ,  F16K31/60

Abstract: Apparatus and methods for supplying a gas to a processing chamber are described. The apparatus comprises an inlet line and an outlet line, each with two valves, in fluid communication an ampoule. A bypass line connects the inlet valve and outlet valve closest to the ampoule. The apparatus and methods of use allow a precursor residue to be removed from the delivery lines of a processing chamber.

公开(公告)号：US20180350826A1

公开(公告)日：2018-12-06

申请号：US15995693

申请日：2018-06-01

Applicant: Applied Materials, Inc.

Inventor： Jacqueline S. Wrench ,  Jing Zhou ,  Fuqun Grace Vasiknanonte ,  Jiang Lu ,  Paul F. Ma ,  Nobuyuki Sasaki ,  Sree Rangasai V. Kesapragada ,  Sang Ho Yu ,  Mei Chang

IPC: H01L27/11551 ,  H01L27/11578 ,  H01L21/822 ,  H01L21/8229 ,  H01L21/8239 ,  H01L21/285

Abstract: Embodiments of the invention provide methods of processing a substrate having a stack of spaced oxide layers with gaps between the oxide layers. A metallic nucleation layer is formed in the gaps and a cobalt film is deposited on the nucleation layer to form wordlines.

公开(公告)号：US20180144973A1

公开(公告)日：2018-05-24

申请号：US15800784

申请日：2017-11-01

Applicant: Applied Materials, Inc.

Inventor： Weifeng Ye ,  Jiang Lu ,  Feng Chen ,  Zhiyuan Wu ,  Kai Wu ,  Vikash Banthia ,  He Ren ,  Sang Ho Yu ,  Mei Chang ,  Feiyue Ma ,  Yu Lei ,  Keyvan Kashefizadeh ,  Kevin Moraes ,  Paul F. Ma ,  Hua Ai

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/7685 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/5226 ,  H01L23/53238

Abstract: Methods to selectively deposit capping layers on a copper surface relative to a dielectric surface comprising separately the copper surface to a cobalt precursor gas and a tungsten precursor gas, each in a separate processing chamber. The copper surface and the dielectric surfaces can be substantially coplanar. The combined thickness of cobalt and tungsten capping films is in the range of about 2 Å to about 60 Å.