公开(公告)号：EP3009459B1

公开(公告)日：2017-08-02

申请号：EP15191812.5

申请日：2005-05-13

Applicant: Dow Global Technologies LLC

Inventor： BEIGZADEH, Daryoosh ,  CAMPBELL, Jr. Richard E. ,  DEVORE, David D. ,  ROMER, Duane R. ,  STEVENS, James C. ,  TIMMERS, Francis J. ,  TUINSTRA, Hendrik E. ,  VOSEJPKA, Paul C.

IPC: C08F4/659 ,  C08F210/16 ,  C08F210/14

CPC classification number: C08F10/02 ,  B01J2219/00585 ,  B01J2219/0059 ,  B01J2219/00702 ,  B01J2219/00736 ,  B01J2219/00738 ,  C08F4/659 ,  C08F4/65908 ,  C08F10/00 ,  C08F2410/01 ,  Y10S526/943 ,  C08F4/65912 ,  C08F4/6592 ,  C08F210/02 ,  C08F212/08 ,  C08F210/16 ,  C08F210/14 ,  C08F210/06

公开(公告)号：EP2914648A1

公开(公告)日：2015-09-09

申请号：EP13783189.7

申请日：2013-10-14

Applicant: Dow Global Technologies LLC

Inventor： HUSTAD, Phillip D. ,  POTISEK, Stephanie L. ,  FEIST, Rebekah K. ,  STEVENS, James C. ,  MILLS, Michael E. ,  RAO, Yuanqiao ,  GARCIA-MEITIN, Eddy I.

IPC: C08J5/00 ,  C08K3/22 ,  C08L53/00

CPC classification number: C08K3/22 ,  B82Y40/00 ,  C08F287/00 ,  C08J5/005 ,  C08J2351/00 ,  C08J2353/00 ,  C08K2003/2241 ,  C08K2201/011 ,  C08L51/006 ,  G02B1/04 ,  G02B1/08 ,  G02B1/111 ,  G03F7/0002 ,  H01L31/02168 ,  H01L31/055 ,  C08F230/08 ,  C08L53/00

Abstract: A composition comprising a phase separated block copolymer and an inorganic dielectric nanoparticle, wherein the nanoparticle is dispersed in the copolymer and is present primarily in one phase. For example, a Ti0
2 nanocomposite can be created via the in situ formation of Ti0
2 within a silane-grafted OBC. Taking advantage of the phase morphology of the OBC and the differential swelling of the hard and soft segments, due to their inherent crystallinity, enables the selective incorporation of Ti0
2 nanoparticles into the soft segments of the OBC.

公开(公告)号：EP2673798A1

公开(公告)日：2013-12-18

申请号：EP12711041.9

申请日：2012-02-10

Applicant: Dow Global Technologies LLC ,  California Institute of Technology

Inventor： KIMBALL,Gregory M. ,  BOSCO, Jeffrey P. ,  ATWATER, Harry A. ,  LEWIS, Nathan S. ,  DEGROOT, Marty W. ,  STEVENS, James C.

IPC: H01L21/02 ,  C23C14/24

CPC classification number: H01L31/18 ,  C30B23/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02538 ,  H01L21/02568 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/0321 ,  H01L31/0392 ,  H01L31/068 ,  H01L31/075 ,  Y02E10/547 ,  Y02E10/548

Abstract: The present invention provides methods for making pnictide compositions, particularly photoactive and/or semiconductive pnictides. In many embodiments, these compositions are in the form of thin films grown on a wide range of suitable substrates to be incorporated into a wide range of microelectronic devices, including photovoltaic devices, photodetectors, light emitting diodes, betavoltaic devices, thermoelectric devices, transistors, other optoelectronic devices, and the like. As an overview, the present invention prepares these compositions from suitable source compounds in which a vapor flux is derived from a source compound in a first processing zone, the vapor flux is treated in a second processing zone distinct from the first processing zone, and then the treated vapor flux, optionally in combination with one or more other ingredients, is used to grow pnictide films on a suitable substrate.

公开(公告)号：EP2907165A1

公开(公告)日：2015-08-19

申请号：EP13777443.6

申请日：2013-10-07

Applicant: Dow Global Technologies LLC ,  California Institute of Technology

Inventor： FEIST, Rebekah K. ,  DEGROOT, Marty W. ,  STEVENS, James C. ,  BOSCO, Jeffrey P. ,  ATWATER, Harry A.

IPC: H01L31/032 ,  H01L31/062 ,  H01L31/07 ,  H01L31/072 ,  H01L31/108 ,  H01L31/109

CPC classification number: H01L31/0296 ,  H01L31/032 ,  H01L31/062 ,  H01L31/07 ,  H01L31/072 ,  H01L31/1085 ,  H01L31/109 ,  H01L31/1828 ,  Y02E10/50

Abstract: The present invention provides strategies for improving the quality of the insulating layer in MIS and SIS devices in which the insulator layer interfaces with at least one pnictide-containing film. The principles of the present invention are based at least in part on the discovery that very thin (20 nm or less) insulating films comprising a chalcogenide such as i-ZnS are surprisingly superior tunnel barriers in MIS and SIS devices incorporating pnictide semiconductors. In one aspect, the present invention relates to a photovoltaic device, comprising: a semiconductor region comprising at least one pnictide semiconductor; an insulating region electrically coupled to the semiconductor region, wherein the insulating region comprises at least one chalcogenide and has a thickness in the range from 0.5 nm to 20 nm; and a rectifying region electrically coupled to the semiconductor region in a manner such that the insulating region is electrically interposed between the collector region and the semiconductor region.