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公开(公告)号:US10923244B2
公开(公告)日:2021-02-16
申请号:US15827956
申请日:2017-11-30
Applicant: ELBIT SYSTEMS OF AMERICA, LLC
Inventor: Arlynn W. Smith , Dan CHiLCOTT
Abstract: A phosphor screen for a Micro-Electro-Mechanical-Systems (MEMS) image intensifier includes a wafer structure, a lattice of interior walls, a thin film phosphor layer, and a reflective metal layer. The wafer structure has a naturally opaque top layer and an active area defined within the naturally opaque top layer. The lattice of interior walls is formed, within the active area, from the naturally opaque top layer. The thin film phosphor layer is disposed in the active area, between the lattice of interior walls. The reflective metal layer that is disposed atop the thin film phosphor layer. In at least some instances, the thin film phosphor layer is a non-particle phosphor layer.
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公开(公告)号:US11901151B2
公开(公告)日:2024-02-13
申请号:US17706112
申请日:2022-03-28
Applicant: Elbit Systems of America, LLC
Inventor: Stephen W. Carroll , Arlynn W. Smith , Todd A. Smith
CPC classification number: H01J31/507 , G02B23/12 , H01J9/125 , H01J2231/5016 , H01J2231/50026 , H01J2231/50063
Abstract: A night vision system along with an image intensifier tube having a microchannel plate and method of forming the microchannel plate are provided. The microchannel plate comprises a plurality of spaced channels extending through the microchannel plate, wherein each channel sidewall surface near the input face of the microchannel plate comprises a series of layers formed thereon. The input face of the microchannel plate, as well as the sidewall surfaces of each channel near the input surfaces, are configured with an electron backscatter layer arranged between a contact metal layer and a secondary electron booster layer. When formed partially into the channel openings near the input face, the electron backscatter layer and overlying secondary electron booster layer are configured circumferentially around the sidewall surfaces and extend radially inward toward a central axis of each channel.
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公开(公告)号:US11810747B2
公开(公告)日:2023-11-07
申请号:US17377065
申请日:2021-07-15
Applicant: Elbit Systems of America, LLC
Inventor: Dan W. Chilcott , Arlynn W. Smith , John B. Hammond
CPC classification number: H01J31/26 , H01J29/04 , H01J29/085
Abstract: An apparatus, system and method is provided for producing stacked wafers containing an array of image intensifiers that can be evacuated on a wafer scale. The wafer scale fabrication techniques, including bonding, evacuation, and compression sealing concurrently forms a plurality of EBCMOS imager anodes with design elements that enable high voltage operation with optional enhancement of additional gain via TMSE amplification. The TMSE amplification is preferably one or more multiplication semiconductor wafers of an array of EBD die placed between a photocathode within a photocathode wafer and an imager anode that is preferably an EBCMOS imager anode bonded to or integrated within an interconnect die within an interconnect wafer.
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公开(公告)号:US20210343514A1
公开(公告)日:2021-11-04
申请号:US17375734
申请日:2021-07-14
Applicant: Elbit Systems of America, LLC
Inventor: Mark Michalski , Ransom Hal Castleberry , John A. Balboni , Arlynn W. Smith , Raymond Leo Chabot
Abstract: A method of controlling the performance of a night vision device includes supplying, by a power supply, to a microchannel plate of a light intensifier tube, a control voltage that controls a gain of the microchannel plate, determining an amount of compensation to apply to the control voltage based on a change to the control voltage attributed to a change in temperature of an operating environment of the night vision device, adjusting the control voltage in accordance with the amount of compensation to obtain a compensated control voltage, and supplying, by the power supply, the compensated control voltage to the microchannel plate of the light intensifier tube. The method may further include determining whether the night vision device has been used for a predetermined amount of time, and only after that predetermined amount of time, is the method configured to supply the compensated control voltage.
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