公开(公告)号：EP3519848A1

公开(公告)日：2019-08-07

申请号：EP17777193.8

申请日：2017-09-15

Applicant: Forschungsverbund Berlin e.V.

Inventor： LIERO, Armin ,  KLEHR, Andreas ,  HOFFMANN, Thomas

IPC: G01S7/484 ,  G01R1/04 ,  H01L27/15

公开(公告)号：EP2057720A1

公开(公告)日：2009-05-13

申请号：EP07802923.8

申请日：2007-08-27

Applicant: Forschungsverbund Berlin E.V.

Inventor： TRÄNKLE, Günther ,  ERBERT, Götz ,  KLEHR, Andreas ,  HOFMANN, Martin

IPC: H01S1/02

CPC classification number: H01S5/0265 ,  H01S1/02 ,  H01S5/026 ,  H01S5/1021 ,  H01S5/1092 ,  H01S5/30

Abstract: The invention relates to a device and a method for the generation of laser beams in the THz range. A semiconductor laser structure is provided, wherein a substrate (1) in a first region (7) along a longitudinal axis of waveguide layers is made of a first, semi-insulating substrate material having low attenuation of electromagnetic radiation in the range of 0.1 THz to 10 THz and in a second region (8) along said longitudinal axis is made of a second substrate material having low attenuation of electromagnetic radiation in the range of 0.1 THz to 10 Thz, wherein on the second jacket layer (6) in the second region of the substrate a layer (10) made of a third material having low attenuation of electromagnetic radiation in the range of 0.1 THz to 10 THz is disposed. The side of the layer made of the third material facing away from the second jacket layer as well as the side of the second substrate material facing away from the first jacket layer (2) comprise a reflective layer (11).