公开(公告)号：JP2014182154A

公开(公告)日：2014-09-29

申请号：JP2013054397

申请日：2013-03-15

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： TANGO NAOHIRO ,  YOSHITOME MASAHIRO ,  YAMAMOTO KEI ,  YAMAMOTO OSAO ,  KATAOKA SHOHEI

IPC: G03F7/075 ,  C08F20/10 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

CPC classification number: G03F7/2041 ,  C08F2230/085 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0755

Abstract: PROBLEM TO BE SOLVED: To provide an active ray-sensitive or radiation-sensitive resin composition capable of inhibiting pattern collapses within an ultrafine region (e.g., region of line width=50 nm or less) and of improving the margin of focus (DOF: Depth of Focus); a resist film using the composition; a pattern formation method; a method for manufacturing an electronic device; and an electronic device.SOLUTION: The provided active ray-sensitive or radiation-sensitive resin composition includes: (A) a resin possessing repeating units including groups generating polar groups as a result of the decomposition thereof based on the function of an acid; (B) a compound generating an acid as a result of the irradiation thereof with active rays or radiations; and (F) a compound expressed by the following general formula (1): in the general formula (1), X expresses: an organic group including at least one type selected from the group consisting of amino groups, nitrogen-containing heterocyclic groups, epoxy groups, methacryloyl groups, vinyl groups, and mercapto groups; alkyl group; cycloalkyl group; aryl group; or alkoxy group; n is an integer of 0 to 3).

Abstract translation: 要解决的问题：提供能够抑制超细区域（例如，线宽= 50nm或更小的区域）内的图案塌陷并提高聚焦余量的活性射线敏感或辐射敏感性树脂组合物（DOF： 焦点深度）; 使用该组合物的抗蚀剂膜; 图案形成方法; 电子设备的制造方法; 和电子装置。解决方案：提供的活性射线敏感或辐射敏感性树脂组合物包括：（A）具有重复单元的树脂，其包含基于酸的功能而分解产生极性基团的基团; （B）由于用活性射线或辐射照射而产生酸的化合物; 和（F）由以下通式（1）表示的化合物：在通式（1）中，X表示：包括选自氨基，含氮杂环基， 环氧基，甲基丙烯酰基，乙烯基和巯基; 烷基; 环烷基 芳基; 或烷氧基; n为0〜3的整数）。

公开(公告)号：JP2014026179A

公开(公告)日：2014-02-06

申请号：JP2012167813

申请日：2012-07-27

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： KOSHIJIMA KOSUKE ,  YAMAGUCHI SHUHEI ,  YAMAMOTO KEI

IPC: G03F7/039 ,  C08F12/12 ,  C08F20/10 ,  C08F30/08 ,  G03F7/038 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/11 ,  C08F220/18 ,  C08F220/28 ,  C08L25/14 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/2041 ,  G03F7/325 ,  C08F212/12 ,  C08F220/24 ,  C08F220/34 ,  C08F2220/1858

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method capable of achieving small LWR (line width roughness), excellent depth of focus (DOF) performance, excellent pattern features, inhibition of pattern collapse and reduction of development defects, in the process of forming a fine pattern such as a trench pattern with a pattern size of 40 nm or less represented by a line width, a space width or the like by use of an organic developing solution, and to provide an actinic ray-sensitive or radiation-sensitive resin composition to be used for the method, a resist film, and a method for manufacturing an electronic device and an electronic device using the above pattern forming method and the composition.SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition contains: (A) a resin having a repeating unit that is decomposed by an action of an acid to generate a polar group; (B) a compound that generates an acid by irradiation with actinic rays or radiation; and (C) a component comprising at least either a compound having at least one of a fluorine atom and a silicon atom and having basicity or showing increase in basicity by an action of an acid, or a resin having a CHpartial structure in a side chain moiety and having basicity or showing increase in basicity by an action of an acid. The content of the repeating unit that is decomposed by an action of an acid to generate a polar group is 55 mol% or more with respect to the whole repeating units of the resin (A).

Abstract translation: 要解决的问题：提供一种能够在成型过程中实现小的LWR（线宽粗糙度），优异的焦深度（DOF）性能，优异的图案特征，图案崩溃的抑制和显影缺陷的减少的图案形成方法 通过使用有机显影液由线宽，空间宽度等表示的图案尺寸为40nm以下的沟槽图案的精细图案，并且提供光化学敏感或辐射敏感性树脂 用于该方法的组合物，抗蚀剂膜以及使用上述图案形成方法和组合物的电子器件和电子器件的制造方法。解决方案：光化射线敏感或辐射敏感性树脂组合物含有：（ A）具有通过酸的作用分解以产生极性基团的重复单元的树脂; （B）通过用光化射线或辐射照射产生酸的化合物; 和（C）至少含有具有至少一个具有氟原子和硅原子的化合物的组分，并且具有碱性或通过酸的作用显示碱性的增加，或侧链具有CH部分结构的树脂 部分并具有碱性或通过酸的作用显示碱性增加。 相对于树脂（A）的整个重复单元，通过酸的作用分解产生极性基团的重复单元的含量为55摩尔％以上。

公开(公告)号：JP2013242397A

公开(公告)日：2013-12-05

申请号：JP2012114818

申请日：2012-05-18

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： ITO JUNICHI ,  YAMAGUCHI SHUHEI ,  TAKAHASHI HIDETOMO ,  YAMAMOTO KEI ,  YOSHINO FUMIHIRO

IPC: G03F7/004 ,  C07C219/06 ,  C07C271/16 ,  C07C271/28 ,  C07D205/04 ,  C07D211/46 ,  C07D233/90 ,  C07D235/08 ,  C07D255/02 ,  C07F7/10 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  G03F7/38 ,  H01L21/027

CPC classification number: G03F7/325 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0755 ,  G03F7/11 ,  G03F7/2041

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a negative pattern, in which a pattern excellent in the depth of focus (DOF), uniformity in a local pattern dimension and resolution can be formed even when a pattern having various features including a contact hole pattern is to be formed, and to provide a method for manufacturing an electronic device including the above pattern forming method, an electronic device, and an actinic ray-sensitive or radiation-sensitive resin composition.SOLUTION: The method for forming a negative pattern includes steps of (1) forming a film comprising an actinic ray-sensitive or radiation-sensitive resin composition, (2) exposing the film and (3) developing the exposed film by using a developing solution containing an organic solvent. The actinic ray-sensitive or radiation-sensitive resin composition comprises (G) a non-polymeric compound having a molecular weight of 500 or more and containing a nitrogen atom and either a fluorine atom or a silicon atom.

Abstract translation: 要解决的问题：提供一种形成负图案的方法，其中即使具有包括接触的各种特征的图案，也可以形成焦深（DOF）优异的图案，局部图案尺寸和分辨率的均匀性 并且提供一种用于制造包括上述图案形成方法的电子器件的方法，电子器件和光化学射线敏感或辐射敏感性树脂组合物。解决方案：形成负型图案的方法 包括以下步骤：（1）形成包含光化射线敏感或辐射敏感性树脂组合物的膜，（2）使膜曝光，和（3）通过使用含有机溶剂的显影溶液显影曝光膜。 光化射线敏感性或辐射敏感性树脂组合物包含（G）分子量为500以上且含有氮原子和氟原子或硅原子的非聚合化合物。

公开(公告)号：JP2013068780A

公开(公告)日：2013-04-18

申请号：JP2011207020

申请日：2011-09-22

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： YAMAMOTO KEI ,  KOSHIJIMA KOSUKE ,  TAKAHASHI HIDETOMO ,  YAMAGUCHI SHUHEI ,  SHIRAKAWA MICHIHIRO

IPC: G03F7/38 ,  C08F20/18 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray sensitive or radiation sensitive resin composition capable of forming a hole pattern having an ultrafine pore diameter (for instance, 60 nm or smaller) excellent in circularity while maintaining low dependence on development time for the pore diameter, and to provide a resist film, a pattern forming method, a method for manufacturing an electronic device, and an electronic device using the same.SOLUTION: There is provided an actinic ray sensitive or radiation sensitive resin composition including: (P) a resin having a repeating unit (a) represented by the following general formula (I); (B) a compound that generates an organic acid by irradiation with an actinic ray or radiation; and (C) a basic compound that has a nitrogen atom and is unchanged by irradiation with an actinic ray or radiation. A content of the compound (C) is 1.0 mass% or more based on the total solid content of the actinic ray sensitive or radiation sensitive resin composition. A molar ratio [C]/[B] of the compound (C) to the compound (B) is 0.40 or more.

Abstract translation: 要解决的问题：提供能够形成具有优异圆形度的超细孔径（例如，60nm或更小）的孔图案的光化射线敏感或辐射敏感性树脂组合物，同时保持对显影时间的低依赖性 孔径，并且提供抗蚀剂膜，图案形成方法，电子器件的制造方法和使用该抗蚀剂膜的电子器件。 提供一种光化射线敏感或辐射敏感性树脂组合物，其包含：（P）具有由以下通式（I）表示的重复单元（a）的树脂; （B）通过用光化射线或辐射照射产生有机酸的化合物; 和（C）具有氮原子并且通过用光化射线或辐射照射而不变的碱性化合物。 化合物（C）的含量相对于光化射线敏感性或辐射敏感性树脂组合物的总固体成分为1.0质量％以上。 化合物（C）与化合物（B）的摩尔比[C] / [B]为0.40以上。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2007279662A

公开(公告)日：2007-10-25

申请号：JP2006245681

申请日：2006-09-11

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： IWATO KAORU ,  KODAMA KUNIHIKO ,  YOSHIDA YUKO ,  YAMAMOTO KEI

IPC: G03F7/039 ,  G03F7/004 ,  H01L21/027

CPC classification number: G03F7/0397 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111

Abstract: PROBLEM TO BE SOLVED: To provide a positive resist composition for satisfying all of line edge roughness (LWR), exposure latitude (EL), PEB temperature dependency and pattern collapsing in a high order, and a pattern formation method using the positive resist composition. SOLUTION: The positive resist composition comprises: (A) a resin which increases solubility in an alkali developing solution by an action of an acid and comprises a repeating unit containing a lactone structure and a cyano group, a repeating unit containing a first group of a specific structure and a repeating unit containing a second group of a specific structure which is different from the first group; (B) a compound which generates an acid upon irradiation of an actinic ray or a radiation; and (C) a solvent. The pattern formation method using the positive resist composition is also provided. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于满足线条边缘粗糙度（LWR），曝光宽容度（EL），PEB温度依赖性和高阶图案折叠的正性抗蚀剂组合物以及使用阳性的图案形成方法 抗蚀剂组成。 正型抗蚀剂组合物包含：（A）通过酸的作用增加在碱性显影液中的溶解度并包含含有内酯结构和氰基的重复单元的树脂，含有第一 特定结构的基团和含有与第一组不同的特定结构的第二组的重复单元; （B）在光化射线或辐射照射时产生酸的化合物; 和（C）溶剂。 还提供了使用正型抗蚀剂组合物的图案形成方法。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2014002358A

公开(公告)日：2014-01-09

申请号：JP2013046376

申请日：2013-03-08

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： ITO JUNICHI ,  YAMAGUCHI SHUHEI ,  TAKAHASHI HIDETOMO ,  YAMAMOTO KEI

IPC: G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/0046 ,  C08F220/18 ,  C08F220/22 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/32 ,  G03F7/325 ,  G03F7/40 ,  H01L21/027 ,  H01L21/0273

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method showing excellence in reduction of bridge defects and restrained in generation of particles in forming a fine pattern with a line width of 50 nm or less by a developing method using an organic developing solution, and to provide an actinic ray-sensitive or radiation-sensitive resin composition used for the method, a resist film, a method for manufacturing an electronic device, and an electronic device.SOLUTION: The pattern forming method includes steps of: (i) forming a film of an actinic ray-sensitive or radiation-sensitive resin composition; (ii) exposing the film; and (iii) developing the film by using a developing solution containing an organic solvent to form a negative pattern. The actinic ray-sensitive or radiation-sensitive resin composition comprises (A) a resin showing an increase in the polarity by an action of an acid to decrease the solubility with a developing solution containing an organic solvent, (B) a compound that generates an acid by irradiation with actinic rays or radiation, (C) a solvent, and (D) a resin having a structural unit including a fluorine atom but no CFmoiety structure.

Abstract translation: 要解决的问题：提供一种图案形成方法，其通过使用有机显影液的显影方法，形成具有50nm以下的线宽的细微图案形成中桥接缺陷的降低和抑制粒子生成的图案形成方法，以及 提供用于该方法的光化射线敏感或辐射敏感性树脂组合物，抗蚀剂膜，电子器件的制造方法和电子器件。解决方案：图案形成方法包括以下步骤：（i）形成膜 的光化射线敏感或辐射敏感性树脂组合物; （ii）曝光胶片; 和（iii）通过使用含有有机溶剂的显影溶液显影以形成负图案。 光化射线敏感性或辐射敏感性树脂组合物包含（A）通过酸的作用显示极性增加的树脂，以降低与含有机溶剂的显影液的溶解度，（B）产生 酸，通过光化射线或辐射照射，（C）溶剂，和（D）具有包含氟原子但不具有CF结构的结构单元的树脂。

公开(公告)号：JP2013257435A

公开(公告)日：2013-12-26

申请号：JP2012133229

申请日：2012-06-12

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： YAMAMOTO KEI ,  UEBA RYOSUKE

IPC: G03F7/40 ,  G03F7/038 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/0035 ,  G03F7/0397 ,  G03F7/325 ,  G03F7/405

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method by which a trench pattern or a hole pattern having an ultrafine width or hole diameter can be formed while generation of blob defects is sufficiently reduced, and to provide a composition used for the method, a method for manufacturing an electronic device, and an electronic device.SOLUTION: A pattern forming method includes: a step of forming a first film by using an actinic ray-sensitive or radiation-sensitive resin composition (I), which contains a resin (A) showing an increase in the polarity by an action of an acid to decrease the solubility with a developing solution containing an organic solvent, and a compound (B) generating an acid by irradiation with actinic rays or radiation, and exposing and developing the first film to form a negative pattern; and a step of forming a second film on the negative pattern by using a composition (II), which contains a compound (A') showing an increase in the polarity by an action of an acid to decrease the solubility with a removing solution containing an organic solvent, and removing a region where an acid generating from the compound (B) does not react with the compound (A'), by using a removing solution.

Abstract translation: 要解决的问题：提供一种图案形成方法，通过该图案形成方法可以形成具有超细宽度或孔直径的沟槽图案或孔图案，同时充分减少斑点缺陷的产生，并提供用于该方法的组合物 电子器件的制造方法和电子器件。解决方案：图案形成方法包括：通过使用含有树脂（A）的光化射线敏感性或辐射敏感性树脂组合物（I）形成第一膜的步骤 ）通过酸的作用显示极性的增加，以降低与含有有机溶剂的显影溶液的溶解度，以及通过用光化射线或辐射照射产生酸的化合物（B），以及曝光和显影第一膜 形成负面图案; 以及通过使用组合物（II）在负图案上形成第二膜的步骤，其包含通过酸的作用显示极性增加的化合物（A'），以降低与含有 通过使用除去溶液除去由化合物（B）产生的酸与化合物（A'）不反应的区域。

公开(公告)号：JP2013178450A

公开(公告)日：2013-09-09

申请号：JP2012100181

申请日：2012-04-25

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： YAMAGUCHI SHUHEI ,  TAKAHASHI HIDETOMO ,  ITO JUNICHI ,  YAMAMOTO KEI

IPC: G03F7/039 ,  C08F20/10 ,  G03F7/004 ,  G03F7/038 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/0388 ,  C08F220/18 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325

Abstract: PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition that allows formation of a pattern, upon forming a fine pattern, with excellent uniformity in a local pattern dimension and exposure latitude while reducing generation of scum and residual water defects, and to provide a pattern forming method, a resist film, a method for manufacturing an electronic device, and an electronic device using the composition.SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition comprises: (A) a resin having a repeating unit expressed by general formula (I); (B) a compound that generates an acid by irradiation with actinic rays or radiation; and (C) a resin having at least one repeating unit (x) in a repeating unit expressed by general formula (II) and a repeating unit expressed by general formula (III), in which the content of the repeating unit (x) is 90 mol% or more with respect to the whole repeating units in the resin (C).

Abstract translation: 要解决的问题：提供能够形成图案的光化射线敏感或辐射敏感性树脂组合物，在形成微细图案时，具有局部图案尺寸和曝光宽容度的优异均匀性，同时减少浮渣和残留水的产生 缺点，并提供图案形成方法，抗蚀剂膜，电子器件的制造方法和使用该组合物的电子器件。解决方案：光化射线敏感或辐射敏感性树脂组合物包含：（A）树脂 具有由通式（I）表示的重复单元; （B）通过用光化射线或辐射照射产生酸的化合物; 和（C）具有由通式（II）表示的重复单元中的至少一个重复单元（x）和由通式（III）表示的重复单元的树脂，其中重复单元（x）的含量为 相对于树脂（C）中的全部重复单元为90摩尔％以上。

公开(公告)号：JP2013152450A

公开(公告)日：2013-08-08

申请号：JP2012279835

申请日：2012-12-21

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： ITO JUNICHI ,  TAKAHASHI HIDETOMO ,  YAMAGUCHI SHUHEI ,  YAMAMOTO KEI

IPC: G03F7/038 ,  C08F20/28 ,  G03F7/039 ,  G03F7/32 ,  H01L21/027

CPC classification number: G03F7/0388 ,  C08F220/18 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325 ,  H01L21/0274

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method that has excellent uniformity and exposure latitude of a local pattern dimension in formation of a fine pattern such as a hole pattern with a pore diameter of 45 nm or smaller and suppresses the occurrence of a water residue defect, an actinic ray-sensitive or radiation-sensitive resin composition used for the same, a resist film, a manufacturing method of an electronic device, and an electronic device; in particular, a pattern forming method suitable for liquid immersion exposure, an actinic ray-sensitive or radiation-sensitive resin composition used for the same, a resist film, a manufacturing method of an electronic device, and an electronic device.SOLUTION: A pattern forming method includes: (a) a step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) that increases polarity by the action of acid and decreases solubility to a developing solution containing an organic solvent, a compound (B) that generates acid by irradiation with an actinic ray or radiation, a solvent (C), and a resin (D) that is different from the resin (A) and substantially does not contain fluorine atoms and silicon atoms; (b) a step of exposing the film; and (c) a step of developing the film by using a developing liquid containing an organic solvent to form a negative pattern. The content of the resin (D) relative to the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition is 0.1 mass% or more and less than 10 mass%; and the mass content of a CHpartial structure of a side chain part in the resin (D) accounts for 12.0% or more of the resin (D).

Abstract translation: 要解决的问题：提供一种图案形成方法，其在形成孔径为45nm以下的孔图案等精细图案时具有优异的局部图案尺寸的均匀性和曝光宽容度，并抑制水的发生 残留缺陷，用于其的光化射线敏感或辐射敏感性树脂组合物，抗蚀剂膜，电子器件的制造方法和电子器件; 特别是适用于液浸式的图案形成方法，用于其的光化射线敏感性或辐射敏感性树脂组合物，抗蚀剂膜，电子器件的制造方法和电子器件。解决方案： 成型方法包括：（a）通过含有树脂（A）的光化射线敏感或辐射敏感性树脂组合物形成膜的步骤，其通过酸的作用增加极性，并降低对含有有机溶剂的显影溶液的溶解性 ，通过用光化射线或辐射照射产生酸的化合物（B），不同于树脂（A）的溶剂（C）和树脂（D），并且基本上不含氟原子和硅原子; （b）曝光胶片的步骤; 和（c）通过使用含有有机溶剂的显影液形成阴图案来显影该膜的步骤。 树脂（D）相对于光化射线敏感性或辐射敏感性树脂组合物的总固体成分的含量为0.1质量％以上且小于10质量％ 树脂（D）中侧链部分的CH部分结构的质量含量占树脂（D）的12.0％以上。

公开(公告)号：JP2013101271A

公开(公告)日：2013-05-23

申请号：JP2011245745

申请日：2011-11-09

Applicant: Fujifilm Corp ,  富士フイルム株式会社

Inventor： YAMAGUCHI SHUHEI ,  TAKAHASHI HIDETOMO ,  YAMAMOTO KEI ,  YOSHINO FUMIHIRO

IPC: G03F7/038 ,  C08F220/18 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

CPC classification number: G03F7/038 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a pattern having excellent roughness performance such as LWR, uniformity of a local pattern dimension and exposure latitude, and favorable dry etching durability, and to provide an actinic ray-sensitive or radiation-sensitive resin composition to be used for the method.SOLUTION: The method for forming a pattern includes steps of: (a) forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition, which contains a resin (P) containing a repeating unit (b1) expressed by general formula (b1) that is not acid-decomposable and a repeating unit that is decomposed by acid to produce a polar group, and a compound (B) that generates acid by irradiation with actinic rays or radiation; (b) exposing the film to actinic rays or radiation at a wavelength of 200 nm or less; and (c) forming a negative pattern by developing the film by using a developing solution containing an organic solvent that has a hetero atom and a carbon atom and has 7 or more carbon atoms. In general formula (b1), A represents an alicyclic hydrocarbon group containing no oxygen atom but optionally having a substituent; and Xrepresents a hydrogen atom or an alkyl group.

Abstract translation: 要解决的问题：提供一种形成具有优异的粗糙度性能的方法，例如LWR，局部图案尺寸和曝光宽容度的均匀性以及良好的干蚀刻耐久性，并且提供光化学敏感或辐射 用于该方法的敏感性树脂组合物。 解决方案：形成图案的方法包括以下步骤：（a）通过使用含有表达的重复单元（b1）的树脂（P）的光化射线敏感或辐射敏感性树脂组合物形成膜 通过不能酸解的通式（b1）和被酸分解以产生极性基的重复单元和通过用光化射线或辐射照射产生酸的化合物（B）; （b）将膜暴露于波长为200nm以下的光化射线或辐射; 和（c）通过使用含有具有杂原子和碳原子并且具有7个或更多个碳原子的有机溶剂的显影溶液来显影该膜来形成负图案。 通式（b1）中，A表示不含氧原子但可以具有取代基的脂环式烃基; 而X 0 表示氢原子或烷基。 版权所有（C）2013，JPO＆INPIT