Mems switch and method for manufacturing the same
    11.
    发明专利
    Mems switch and method for manufacturing the same 有权
    MEMS开关及其制造方法

    公开(公告)号:JP2013089482A

    公开(公告)日:2013-05-13

    申请号:JP2011229587

    申请日:2011-10-19

    Abstract: PROBLEM TO BE SOLVED: To solve a problem on a new structure of a microswitch using a flexible beam.SOLUTION: A MEMS switch comprises: a flexible beam FB formed of an active Si layer AL of a SOI substrate and supported by a supporting Si substrate SS through a bonding oxide film BOX; a movable drive electrode MDE formed on the flexible beam FB; a movable contact electrode MCE having a movable contact point formed on the flexible beam FB; a fixed drive electrode FDE supported at a first set of fixing parts and extended above the movable drive electrode MDE; and a fixed contact electrode FCE supported by a second set of fixing parts and having a fixed contact point above the movable contact point. The fixed drive electrode FDE and the fixed contact electrode FCE include laminated layer of an adhesion metal layer AM, a seed layer SD and a plated layer PL, above the first and the second set of fixing parts. The plated layer PL is on the seed layer SD in a free lower surface faced to the movable drive electrode MDE and the movable contact point.

    Abstract translation: 要解决的问题:解决使用柔性梁的微型开关的新结构的问题。 解决方案:MEMS开关包括:柔性束FB,其由SOI衬底的有源Si层AL形成,并通过结合氧化膜BOX由支撑Si衬底SS支撑; 形成在柔性梁FB上的可动驱动电极MDE; 具有形成在柔性梁FB上的可动接点的可动接触电极MCE; 固定驱动电极FDE,其被支撑在第一组固定部分上并在可移动驱动电极MDE上方延伸; 以及由第二组固定部件支撑并且在可动触点上方具有固定触点的固定接触电极FCE。 固定驱动电极FDE和固定接触电极FCE包括在第一和第二组固定部分上方的粘合金属层AM,种子层SD和镀层PL的叠层。 电镀层PL在面向可动驱动电极MDE和可动触点的自由下表面的种子层SD上。 版权所有(C)2013,JPO&INPIT

    Manufacturing method of panel assembly for pdp
    12.
    发明专利
    Manufacturing method of panel assembly for pdp 有权
    PDP组件的制造方法

    公开(公告)号:JP2004071465A

    公开(公告)日:2004-03-04

    申请号:JP2002231623

    申请日:2002-08-08

    Abstract: PROBLEM TO BE SOLVED: To form a dielectric layer on the entire substrate by forming a plurality of recessed grooves on the electrode-forming face of the substrate on which electrodes are formed on the entire display region, and coating a dielectric material on the remaining electrodes, and filling the dielectric material in the recessed grooves and firing them.
    SOLUTION: The dielectric layer is formed on the entire glass substrate by the following method: namely, a plurality of recessed grooves are formed on an electrode-forming face of the glass substrate on which electrodes are formed on the entire display region, and a dielectric material is coated on the remaining electrodes, and in the state in which the dielectric material-coated surface of the glass substrate is kept upward, the dielectric material is fired at the temperatures at which the dielectric material is softened and a part of it flows into the recessed grooves.
    COPYRIGHT: (C)2004,JPO

    Abstract translation: 要解决的问题:通过在整个显示区域上形成有电极的基板的电极形成面上形成多个凹槽,在整个基板上形成电介质层,并将电介质材料涂覆在 剩下的电极,并且将凹槽中的电介质材料填充并烧制。 解决方案:通过以下方法在整个玻璃基板上形成电介质层:即,在整个显示区域上形成有电极的玻璃基板的电极形成面上形成多个凹槽, 并且在其余电极上涂敷电介质材料,在玻璃基板的电介质材料被覆面向上方保持的状态下,在电介质材料软化的温度下烧成电介质材料, 它流入凹槽。 版权所有(C)2004,JPO

    PLASMA DISPLAY PANEL
    13.
    发明专利

    公开(公告)号:JP2002184318A

    公开(公告)日:2002-06-28

    申请号:JP2000382607

    申请日:2000-12-15

    Applicant: FUJITSU LTD

    Abstract: PROBLEM TO BE SOLVED: To provide a PDP that has small discharge current during main discharge and yet has a high luminance and high discharge efficiency. SOLUTION: The plasma display panel comprises, on a pair of glass substrates arranged opposed to each other, a plurality of barrier ribs that are formed in parallel on the inner side face of at least one of the substrates of the pair of glass substrates and a plurality of main electrodes that are arranged in parallel or in crossing direction with the barrier ribs on the substrate on which the plural partition walls are formed and have branch-shape electrodes extending to the side wall of the barrier ribs. It is so constructed that main discharge is generated between the branch electrodes of each main electrode opposing between the neighboring barrier ribs.

    BARRIER-RIB FORMING METHOD FOR PLASMA DISPLAY PANEL

    公开(公告)号:JP2000208042A

    公开(公告)日:2000-07-28

    申请号:JP1097299

    申请日:1999-01-19

    Applicant: FUJITSU LTD

    Abstract: PROBLEM TO BE SOLVED: To efficiently form ribs, and simplify manufacturing by hardening a determined part on the surface of a barrier-rib material layer by heating, by masking a hardened part to spray cut particles, and by baking barrier-rib materials after they are cut. SOLUTION: A barrier-rib material layer 3 contained low melting point glass as a main component is formed on a substrate 2. A determined part in a surface of the barrier-rib material layer 3 is heated to bake, and a hardened part 4 is formed. By using this hardened part 4 for a mask pattern, and cut particles are sprayed on the barrier-rib material layer 3 in a direction of A by a sand blasting method, etc., to cut the barrier-rib material layer 3. Thereafter, the barrier-rib material layer 3 is baked to form partitions 5 on the base 2. Various heat sources such as a laser, a lamp, and a heated metal mold can be used as the heat source K. Glass, quartz, and silicon, etc., are used as the substrate 2. PbO-B2O3-SiO2 glass whose a softening point is 300 to 600 deg.C can be used as low melting point glass powder used for barrier-rib materials.

    METHOD FOR FORMING PARTITION OF DISPLAY PANEL

    公开(公告)号:JPH09288966A

    公开(公告)日:1997-11-04

    申请号:JP9994196

    申请日:1996-04-22

    Applicant: FUJITSU LTD

    Abstract: PROBLEM TO BE SOLVED: To enhance the manufacturing yield of a high-definition display panel by preventing a patterning failure resulting from refinement of partitions. SOLUTION: In order to manufacture a display panel having a plurality of partitions in the form of strips on plan view, that extend in the same direction within a display area E1, a cutting mask 61 for a masking pattern corresponding to the partitions is provided on a partition material layer. In this case, to remove part of the partition material layer by spraying a cutting medium, the masking pattern is so formed that its stripe parts 611 to 613 corresponding to the partitions extend inside and outside of the display area E1 while the distance (d) between the longitudinal end 611a, 612a, 613a of each strip part 611 to 613 and the adjoining other strip part is smaller than the interval D between the strip parts located inside the display area E1.

    PARTITION WALL FORMATION METHOD OF DISPLAY PANEL

    公开(公告)号:JPH09167558A

    公开(公告)日:1997-06-24

    申请号:JP32670995

    申请日:1995-12-15

    Applicant: FUJITSU LTD

    Abstract: PROBLEM TO BE SOLVED: To easily form a partition wall with its great aspect ratio and with its shape advantageous in view of mechanical strength. SOLUTION: During manufacture of a display panel provided with a partition wall for shielding a space in a display area, a first cut layer 290 and a second cut layer 300 are first formed on a base plate in order. Secondly, a cutting mask 62 is provided on the second cut layer 300. And, the second and first cut layers 300 and 290 are partly cut by means of sandblasting. Of the remaining first and second cut layers 291 and 301, the first cut layer 291 is selectively hardened. And, a partition wall 29 is formed by removing a second cut layer 302 in a non-hardened state.

    FIELD EMISSION CATHODE AND ITS MANUFACTURE

    公开(公告)号:JPH0817331A

    公开(公告)日:1996-01-19

    申请号:JP14991094

    申请日:1994-06-30

    Applicant: FUJITSU LTD

    Abstract: PURPOSE:To stabilize an emission current, to decrease a takeout voltage, and to improve yield by piling up an insulating film having an opening and a gate electrode on top of an emitter electrode on a substrate, and making the inclination angle of the ridge of an upper-layer cathode film greater than that of a lower-layer cathode film, the upper-layer cathode film formed in the opening. CONSTITUTION:An emitter electrode 2 made of Mo siliside is laid on top of an insulating substrate 1 made of glass. An insulating film 3 made of SiO2 is laid on top of the emitter electrode 2. A gate electrode 4 made of Mo siliside is laid on top of the insulating film 3. A resist film is formed, and a resist pattern 5 having a 1-mum opening is formed in an area where a cathode film is to be formed later. The opening 6 is formed with the resist pattern 5 as a mask. A sacrificial layer 7 made of MgO is evaporated diagonally. Next, a lower-layer cathode film material 9 consisting of Mo is evaporated, and the evaporation is stopped before the opening 6 is completely blocked, to form a trapezoidal lower-layer cathode film 8 over the emitter electrode in the opening 6. Ni constituting an upper-layer cathode material 11 is evaporated on the material 9 until the opening is blocked, to form an upper-layer cathode film 10 over the film 8, the inclination angle of the film 10 being greater than that of the film 8. The layer 7 is dissolved in an acetic acid aqueous solution to lift off the films 9, 10.

    CATHODE DEVICE AND ITS MANUFACTURE
    19.
    发明专利

    公开(公告)号:JPH0765706A

    公开(公告)日:1995-03-10

    申请号:JP11530994

    申请日:1994-05-27

    Applicant: FUJITSU LTD

    Abstract: PURPOSE:To cause electric field emission with the lowest possible voltage, concerning a cathode device and its manufacture. CONSTITUTION:This is equipped with a substrate 1, at least one emitter tip 2, which has a conical head 2A, and a gate electrode layer 4, which has an opening 4A to expose the head of that emitter tip 2, and the diameter of that opening 4A of that gate electrode layer is smaller than the diameter of the junction with that substrate of that emitter tip 2. In the manufacture, this is so arranged that the gate electrode material of the gate electrode layer 4 is stuck to the diffusion film on the surface of the conical head of the emitter tip 2, and that the inside periphery wall of the opening of the gate electrode layer 4 extends nearly parallel with the conical head of the emitter tip by the removal of that diffusion film.

    FIELD EMISSION CATHODE DEVICE AND MANUFACTURE THEREOF

    公开(公告)号:JPH0620592A

    公开(公告)日:1994-01-28

    申请号:JP33439192

    申请日:1992-12-15

    Applicant: FUJITSU LTD

    Abstract: PURPOSE:To provide a field emission cathode device where a resistance portion for negative feedback and an electron emission portion of low resistance are installed individually on an emission tip in a comparatively simple process, and to manufacture thereof. CONSTITUTION:A first material layer 40 to form cathode electrode film, a second material layer 42 to form the resistance portion 18b for negative feedback of an emitter tip 18 and a third material layer 44 to form the electron emission portion of the emitter tip 18 are formed. A mask 46 is installed at the position where the emitter tip 18 of the third material layer 44 is formed, and the material layer is etched until an undercut is made at the lower portion of the mask 46, and thereafter, an insulating film and a gate electrode film are formed.

Patent Agency Ranking