公开(公告)号：US20210175323A1

公开(公告)日：2021-06-10

申请号：US16704180

申请日：2019-12-05

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Sunil K. Singh ,  Eswar Ramanathan

IPC: H01L49/02 ,  H01L23/522 ,  H01L21/768

Abstract: A capacitor structure for an integrated circuit (IC) is provided. The capacitor structure includes a plurality of spaced metal pillars with each metal pillar positioned on a corresponding underlying metal wire of an underlying metal layer. A metal-insulator-metal layer is positioned over and between the metal pillars. At least one contact is operatively coupled to a first metal pillar of the plurality of metal pillars. The metal-insulator-metal layer creates a MIM capacitor that undulates over the metal pillars, creating a higher density capacitance compared to conventional planar MIM capacitors. The metal pillars extend into the metal-insulator-metal layer, which reduces contact resistance. The capacitor structure can be integrated into an IC with no major integration issues. A related method is also provided.