公开(公告)号：JP2014107446A

公开(公告)日：2014-06-09

申请号：JP2012260067

申请日：2012-11-28

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： YAMANAKA TATSUMI ,  SAKAMOTO AKIRA ,  HOSOKAWA NOBURO

IPC: H01L27/146 ,  H01L27/14 ,  H01L27/144 ,  H01L31/10

CPC classification number: H01L27/14663 ,  H01L27/14603 ,  H01L27/14636 ,  H01L31/022408 ,  H01L31/10 ,  H01L31/103

Abstract: PROBLEM TO BE SOLVED: To provide a photodiode array capable of improving an aperture ratio and reliability.SOLUTION: A photodiode array 1 comprises a plurality of photodiodes PD1 formed on a semiconductor substrate 2. Each of the photodiodes PD1 comprises: a first semiconductor region 3 of a first conductivity type provided on the semiconductor substrate 2; a second semiconductor region 5 of a second conductivity type provided on a surface 21 side with respect to the first semiconductor region 3 so as to surround a prescribed region and constituting a light detection region together with the first semiconductor region 3; and a through electrode 81a provided in a through hole 9A penetrating between the surface 21 and a surface 22 so that it passes through the first semiconductor region 3 and the prescribed region and electrically connected to the second semiconductor region 5. The through hole 9A includes a portion spreading from the surface 21 to the surface 22.

Abstract translation: 要解决的问题：提供能够提高开口率和可靠性的光电二极管阵列。解决方案：光电二极管阵列1包括形成在半导体衬底2上的多个光电二极管PD1。每个光电二极管PD1包括：第一半导体区域3 设置在半导体衬底2上的第一导电类型; 第二导电类型的第二半导体区域5，其设置在相对于第一半导体区域3的表面21侧，以围绕规定区域并与第一半导体区域3一起构成光检测区域; 以及设置在贯穿第一半导体区域3和规定区域并与第二半导体区域5电连接的表面21与表面22之间的通孔9A中的贯通电极81a。贯通孔9A包括： 部分从表面21扩展到表面22。

公开(公告)号：JP2013089918A

公开(公告)日：2013-05-13

申请号：JP2011232106

申请日：2011-10-21

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： NAGANO TERUMASA ,  HOSOKAWA NOBURO ,  SUZUKI TOMOHITO ,  BABA TAKASHI

IPC: H01L31/107

CPC classification number: H01L31/107 ,  G01J1/42 ,  G01T1/208 ,  H01L27/144 ,  H01L27/1443 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14663 ,  H01L28/20 ,  H01L31/02005 ,  H01L31/022408

Abstract: PROBLEM TO BE SOLVED: To provide a light detection device which can restrain temporal resolution from becoming different between pixels and also can further improve temporal resolution.SOLUTION: A semiconductor photodetector 10 includes a plurality of avalanche photodiodes APD operating in Geiger mode and formed in a semiconductor substrate 1N, a quenching resistor R1 connected in series to each of the avalanche photodiodes APD and disposed on a principal plane 1Na side of the semiconductor substrate 1N, and a plurality of through electrodes TE electrically connected to the quenching resistor R1 and formed through the semiconductor substrate 1N from the principal plane 1Na side to a principal plane 1Nb side. A mounting substrate 20 includes a plurality of electrodes E9 which are disposed on a principal plane 20a side corresponding one for one to each of the through electrodes TE. The through electrodes TE and the electrodes E9 are electrically connected via a bump electrode BE. A side face 1Nc of the semiconductor substrate 1N and a side face 30c of a glass substrate 30 are made to be flush with each other.

Abstract translation: 要解决的问题：提供一种能够抑制时间分辨率在像素之间变得不同的光检测装置，并且还可以进一步提高时间分辨率。 解决方案：半导体光电检测器10包括以Geiger模式操作并形成在半导体衬底1N中的多个雪崩光电二极管APD，与每个雪崩光电二极管APD串联连接并设置在主平面1Na侧的淬火电阻器R1 半导体衬底1N的多个贯通电极TE和与淬火电阻R1电连接并从主面1Na侧到主面1Nb侧通过半导体衬底1N形成的多个贯通电极TE。 安装基板20包括多个电极E9，其设置在主平面20a侧，对应于每个贯通电极TE中的一个。 贯通电极TE和电极E9通过凸块电极BE电连接。 使半导体基板1N的侧面1Nc和玻璃基板30的侧面30c彼此齐平。 版权所有（C）2013，JPO＆INPIT