System mit im Waferbonding-Zwischenraum gebildeten Chipkühlkanälen

    公开(公告)号:DE112008000248B4

    公开(公告)日:2012-10-18

    申请号:DE112008000248

    申请日:2008-01-31

    Abstract: System (500), mit: einem Wärmeentnahmematerial (530); einem ersten Wafer (104), in dem eine Photodiode vorliegt; und einem zweiten Wafer (102) in dem ein Optischer-Wellenleiter-Pfademitter vorliegt, wobei der erste Wafer und der zweite Wafer anhand eines Waferbondingprozesses, der einen Zwischenraum (128) zwischen dem ersten Wafer und dem zweiten Wafer bildet, aneinander gebondet sind, wobei der Zwischenraum dahin gehend konfiguriert ist, um das Wärmeentnahmematerial (530) aufzunehmen, wobei in dem Zwischenraum (128) zwischen dem ersten Wafer (104) und dem zweiten Wafer (102) ein strukturiertes Bondingmaterial (114), das eine Waferbondverbindung zwischen dem ersten Wafer (104) und dem zweiten Wafer (102) bewirkt, und ein Zwischenraumeinstellmaterial (112) zum Aufrechterhalten eines Abstands zwischen dem ersten Wafer (104) und dem zweiten Wafer (102) während des Waferbondingprozesses angeordnet ist, wobei das Zwischenraumeinstellmaterial (112) geformt ist, um einen Kanal (506) zum Aufnehmen und Lenken des Wärmeentnahmematerials (530) zu bilden, und wobei das...

    16.
    发明专利
    未知

    公开(公告)号:DE112008000994T5

    公开(公告)日:2010-03-18

    申请号:DE112008000994

    申请日:2008-04-25

    Abstract: In an embodiment, a microchip includes a plurality of heat-producing electronic devices and a plurality of heat-sensitive devices. A plurality of temperature control elements are spatially distributed relative to the heat-producing electronic devices and the heat-sensitive devices to enable active control of temperature to compensate for spatially non-uniform and temporally-varying heat emitted from the heat-producing electronic devices.

    COMPENSATION FOR DISTORTION IN CONTACT LITHOGRAPHY
    18.
    发明申请
    COMPENSATION FOR DISTORTION IN CONTACT LITHOGRAPHY 审中-公开
    补偿联系人LITHOGRAPHY的失败

    公开(公告)号:WO2008013778A3

    公开(公告)日:2008-05-08

    申请号:PCT/US2007016580

    申请日:2007-07-24

    CPC classification number: G03F7/0002 B82Y10/00 B82Y40/00

    Abstract: A method of contact lithography includes predicting distortions likely to occur in transferring a pattern from a mold (110) to a substrate (130) during a contact lithography process: and modifying the mold (110) to compensate for the distortions. A contact lithography system includes a design subsystem (210) configured to generate data describing a lithography pattern: an analysis subsystem (220) configured to identify one or more distortions likely to occur when using a mold (110) created from the data; and a mold modification subsystem (230) configured to modify the data to compensate for the one or more distortions identified by the analysis subsystem (220).

    Abstract translation: 接触光刻的方法包括预测在接触光刻过程期间将图案从模具(110)转移到衬底(130)时可能发生的变形;以及修改模具(110)以补偿变形。 接触光刻系统包括设计子系统(210),其被配置为生成描述光刻图案的数据:分析子系统(220),其被配置为识别当使用由所述数据创建的模具(110)时可能发生的一个或多个失真; 以及模具修改子系统(230),其被配置为修改所述数据以补偿由所述分析子系统(220)识别的所述一个或多个失真。

    MICRORESONATOR SYSTEM AND METHODS OF FABRICATING THE SAME
    19.
    发明申请
    MICRORESONATOR SYSTEM AND METHODS OF FABRICATING THE SAME 审中-公开
    微型激光器系统及其制造方法

    公开(公告)号:WO2009017769A3

    公开(公告)日:2009-04-02

    申请号:PCT/US2008009224

    申请日:2008-07-30

    Abstract: Various embodiments of the present invention are related to microresonator systems that can be used as a laser, a modulator, and a photodetector and to methods for fabricating the microresonator systems. In one embodiment, a microresonator system (100) comprises a substrate (106) having a top surface layer (104), at least one waveguide (114,116) embedded within the substrate (106), and a microdisk (102) having a top layer (118), an intermediate layer (122), a bottom layer (120), current isolation region (128), and a peripheral annular region (124,126). The bottom layer (120) of the microdisk (102) is in electrical communication with the top surface layer (104) of the substrate (106) and is positioned so that at least a portion of the peripheral annular region (124,126) is located above the at least one waveguide (114,116). The current isolation region (128) is configured to occupy at least a portion of a central region of the microdisk and has a relatively lower refractive index and relatively larger bandgap than the peripheral annular region.

    Abstract translation: 本发明的各种实施例涉及可用作激光器,调制器和光电检测器的微谐振器系统以及用于制造微谐振器系统的方法。 在一个实施例中,微谐振器系统(100)包括具有顶表面层(104)的衬底(106),嵌入衬底(106)内的至少一个波导(114,116),以及具有顶层 (118),中间层(122),底层(120),电流隔离区(128)和外围环形区(124,126)。 微盘(102)的底层(120)与衬底(106)的顶表面层(104)电连通,并被定位成使得外围环形区域(124,126)的至少一部分位于上方 该至少一个波导(114,116)。 电流隔离区(128)被配置为占据微盘的中心区域的至少一部分并且具有比外围环形区域相对较低的折射率和相对较大的带隙。

    CONTROLLABLE SURFACE ENHANCED RAMAN SPECTROSCOPY
    20.
    发明申请
    CONTROLLABLE SURFACE ENHANCED RAMAN SPECTROSCOPY 审中-公开
    可控表面增强拉曼光谱

    公开(公告)号:WO2008013683A3

    公开(公告)日:2008-05-15

    申请号:PCT/US2007015961

    申请日:2007-07-11

    CPC classification number: G01N21/658

    Abstract: An apparatus and related methods for facilitating surface-enhanced Raman spectroscopy (SERS) is described. The apparatus comproses a SERS-active structure (102) near which a plurality of analyte molecules (A) are disposed and an actuation device (112) in actuable communication with the SERS-active structure (102) to deform the SERS-active structure (102) while the analyte molecules (A) are disposed therenear. The deformation of the SERS-active structure (102) varies an intensityof radiation Raman-scattered from the analyte molecules (A).

    Abstract translation: 描述了用于促进表面增强拉曼光谱(SERS)的设备和相关方法。 该装置压缩SERS活性结构(102),其附近设置有多个分析物分子(A),以及与SERS活性结构(102)可促动连通以使SERS活性结构变形的致动装置(112) 102),而分析物分子(A)置于其附近。 SERS活性结构(102)的变形改变从分析物分子(A)辐射的拉曼散射强度。

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