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公开(公告)号：GB2194360B
公开(公告)日：1990-09-26
申请号：GB8718094
申请日：1987-07-30
Applicant: HITACHI LTD
Inventor： SAKATA KAZUHIRO , SAKAI YOSHIO , SANO TSUTOMU , ONO YOICHI
Abstract: In a cage position detector for a hydraulic elevator, there is provided a detector for measuring the time duration of the power failure, when the power fails. An amount of sinkage of a cage during the power failure is obtained by the time duration of the power failure and an average sinkage amount per unit time provide in advance. A cage position, which has been detected just before the power failure, is corrected by the above obtained amount of sinkage of the cage. A cage position, from which the elevator is to reopen a normal operation for service after the recovery of power, is specified by the corrected cage position. According to the present invention, even though the cage sinks during the long power failure, it is prevented to lose the true present position of the cage, from which the elevator is to reopen the normal operation after the recovery of power.
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公开(公告)号：MY8700604A
公开(公告)日：1987-12-31
申请号：MY8700604
申请日：1987-12-30
Applicant: HITACHI LTD
Inventor： NAGASAWA KOUICHI , IKEDA SHUJI , SUZUKI NORIO , SAKAI YOSHIO
IPC: H01L27/092 , H01L21/033 , H01L21/762 , H01L21/8238 , H01L27/08 , H01L27/105 , H01L29/78 , H01L27/06
Abstract: Disclosed is a method of manufacturing a semiconductor device which includes MOSFETs of the two-channel conductivity types of P- and N-channel types on a single semiconductor substrate. According to the present invention, a first mask and a second mask are used. The first mask covers that surface part of the semiconductor substrate in which the P-channel type MOSFET is to be formed, and it serves as a mask when an N-type impurity is introduced into the semiconductor substrate. The first mask has a property and etching rate different from those of a film formed by the thermal oxidation of the semiconductor substrate surface. The second mask covers that surface part of the semiconductor substrate which has been formed with the N-channel type MOSFET, and it serves as a mask when a P-type impurity is introduced into the semiconductor substrate. The second mask is used as an inter-layer insulator film.
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公开(公告)号：FR2533749B1
公开(公告)日：1986-03-28
申请号：FR8312886
申请日：1983-08-04
Applicant: HITACHI LTD
Inventor： NAGASAWA KOUICHI , IKEDA SHUJI , SUZUKI NORIO , SAKAI YOSHIO
IPC: H01L27/092 , H01L21/033 , H01L21/762 , H01L21/8238 , H01L27/08 , H01L27/105 , H01L29/78 , H01L21/82 , H01L21/31
Abstract: Disclosed is a method of manufacturing a semiconductor device which includes MOSFETs of the two-channel conductivity types of P- and N-channel types on a single semiconductor substrate. According to the present invention, a first mask and a second mask are used. The first mask covers that surface part of the semiconductor substrate in which the P-channel type MOSFET is to be formed, and it serves as a mask when an N-type impurity is introduced into the semiconductor substrate. The first mask has a property and etching rate different from those of a film formed by the thermal oxidation of the semiconductor substrate surface. The second mask covers that surface part of the semiconductor substrate which has been formed with the N-channel type MOSFET, and it serves as a mask when a P-type impurity is introduced into the semiconductor substrate. The second mask is used as an inter-layer insulator film.
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公开(公告)号：GB2116786B
公开(公告)日：1985-09-04
申请号：GB8306345
申请日：1983-03-08
Applicant: HITACHI LTD
Inventor： ANDO TAKEKI , KUROSAWA TOSHIAKI , KUROHA HIROAKI , SAKAI YOSHIO
Abstract: An AC-to-DC power conversion by connecting GTO elements to the positive arms of a three-phase full wave bridge circuit and by repeating the mode of supplying power to a load from an AC power supply by controlling the GTO elements, and the mode of making the current flowing to the load flow back at the time of interruption of the power supply mode, when the power supply mode and the flow-back mode are switched over, overvoltage at the time of the switching is suppressed by simultaneously causing the power supply and flow-back currents to flow.
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公开(公告)号：GB2128401A
公开(公告)日：1984-04-26
申请号：GB8325513
申请日：1983-09-23
Applicant: HITACHI LTD
Inventor： NAGASAWA KOUICHI , IKEDA SHUJI , SUZUKI NORIO , SAKAI YOSHIO
IPC: H01L27/092 , H01L21/033 , H01L21/762 , H01L21/8238 , H01L27/08 , H01L27/105 , H01L29/78 , H01L27/06
Abstract: Disclosed is a method of manufacturing a semiconductor device which includes MOSFETs of the two-channel conductivity types of P- and N-channel types on a single semiconductor substrate. According to the present invention, a first mask and a second mask are used. The first mask covers that surface part of the semiconductor substrate in which the P-channel type MOSFET is to be formed, and it serves as a mask when an N-type impurity is introduced into the semiconductor substrate. The first mask has a property and etching rate different from those of a film formed by the thermal oxidation of the semiconductor substrate surface. The second mask covers that surface part of the semiconductor substrate which has been formed with the N-channel type MOSFET, and it serves as a mask when a P-type impurity is introduced into the semiconductor substrate. The second mask is used as an inter-layer insulator film.
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Patent Agency Ranking
公开(公告)号：FR2533749A1
公开(公告)日：1984-03-30
申请号：FR8312886
申请日：1983-08-04
Applicant: HITACHI LTD
Inventor： NAGASAWA KOUICHI , IKEDA SHUJI , SUZUKI NORIO , SAKAI YOSHIO
IPC: H01L27/092 , H01L21/033 , H01L21/762 , H01L21/8238 , H01L27/08 , H01L27/105 , H01L29/78 , H01L21/82 , H01L21/31
Abstract: Disclosed is a method of manufacturing a semiconductor device which includes MOSFETs of the two-channel conductivity types of P- and N-channel types on a single semiconductor substrate. According to the present invention, a first mask and a second mask are used. The first mask covers that surface part of the semiconductor substrate in which the P-channel type MOSFET is to be formed, and it serves as a mask when an N-type impurity is introduced into the semiconductor substrate. The first mask has a property and etching rate different from those of a film formed by the thermal oxidation of the semiconductor substrate surface. The second mask covers that surface part of the semiconductor substrate which has been formed with the N-channel type MOSFET, and it serves as a mask when a P-type impurity is introduced into the semiconductor substrate. The second mask is used as an inter-layer insulator film.
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公开(公告)号：HK150295A
公开(公告)日：1995-09-29
申请号：HK150295
申请日：1995-09-21
Applicant: HITACHI LTD
Inventor： SUZUKI MASATO , INABA HIROMI , TAKENAGA HIROSHI , OONUMA NAOTO , NAKAMURA KIYOSHI , SAKAI YOSHIO , YONEDA KENJI , NAKATA NAOFUMI , KASAI SYOJI , YAMAZAKI MASACHIKA
IPC: B66B3/00 , B65H3/00 , B66B1/20 , B66B1/24 , B66B1/34 , G05B13/02 , G06T1/00 , G06T7/60 , H04N7/18 , G06F15/70
Abstract: An image of an elevator hall or an inside of elevator car is acquired by photographing apparatus, and the number of waiting passenger is detected by comparing the above-mentioned image with a background image when no passenger is present at the elevator hall. Second image processing apparatus with high precision is prepared by the same image information as that of first image processing apparatus, teacher information derived therefrom is compared with an output from the first image processing apparatus. If the teacher information is not coincident with the output from the first image processing means, parameters required for performing the image process by the first image processing appartus, for instance, constants, threshold values and weight coefficients employed in an image processing algorithm are adjusted.
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公开(公告)号：GB2225452B
公开(公告)日：1993-05-19
申请号：GB8921149
申请日：1989-09-19
Applicant: HITACHI LTD
Inventor： YONEDA KENJI , SAKAI YOSHIO , MATSUMARU HIROSHI , TOBITA TOSHIMITSU , YASUNOBO SEIJI
Abstract: A control system for an elevator has a plurality of elevator information generation devices each of which has an information output unit which outputs elevator information to an elevator controller and also to at least one display controller which generates one or more on elevator displays. There are a plurality of display controllers, these are preferably connected to the information output units by a common transmission path. There may be a plurality of elevator controllers, when there are a plurality of elevator cabs, and those elevator controllers may all be connected to the common transmission path. There is then a supervisor controller for controlling the elevator controllers.
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公开(公告)号：GB2243927A
公开(公告)日：1991-11-13
申请号：GB9105328
申请日：1991-03-13
Applicant: HITACHI LTD
Inventor： SAKAI YOSHIO , ARABORI NOBORU
Abstract: A hydraulic elevator has a cage 5 being moved upwardly and downwardly by a hydraulic cylinder 2, and an induction motor driven hydraulic pump 13 supplying pressured hydraulic oil to the cylinder 2 through a electromagnetic change-over valve 12. The induction motor speed is controlled on the basis of a output signals of a speed instruction generating circuit 33 and start compensation instruction circuit 34 which generates a compensation signal in response to the difference between the discharge pressure oil of the hydraulic pump 13 and oil pressure in the cylinder 2 so as to prevent jerky movement of cage 5 when the discharge pressure first exceeds the cylinder pressure and valve 12 becomes conductive.
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公开(公告)号：GB2243906A
公开(公告)日：1991-11-13
申请号：GB9104342
申请日：1991-03-01
Applicant: HITACHI LTD
Inventor： SUZUKI MASATO , INABA HIROMI , TAKENAGA HIROSHI , OONUMA NAOTO , NAKAMURA KIYOSHI , SAKAI YOSHIO , YONEDA KENJI , NAKATA NAOFUMI , KASAI SYOJI , YAMAZAKI MASACHIKA
IPC: B66B3/00 , B65H3/00 , B66B1/20 , B66B1/24 , B66B1/34 , G05B13/02 , G06T1/00 , G06T7/60 , H04N7/18
Abstract: An image of an elevator hall or an inside of elevator car is acquired by photographing means (111-11n), and the number of waiting passenger is detected by comparing the above-mentioned image with a background image when no passenger is present at the elevator hall. Second image processing mean (152) with high precision is prepared by the same image information as that of first image processing means (1211), teacher information derived therefrom is compared with an output from the first image processing means. If the teacher information is not coincident with the output from the first image processing means, parameters required for performing the image process by the first image processing means, for instance, constants, threshold values and weight coefficients employed in an image processing algorithm are adjusted.
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