公开(公告)号：SG162764A1

公开(公告)日：2010-07-29

申请号：SG2010040160

申请日：2007-11-16

Applicant: GLOBALFOUNDRIES SINGAPORE PTE ,  IBM ,  INFINEON TECHNOLOGIES AG ,  SAMSUNG

Inventor： WAY TEH YOUNG ,  XIANGDONG CHEN ,  FEN JAMIN F ,  YANG DAEWON ,  BELYANSKY MICHAEL P ,  KNOEFLER ROMAN ,  JUNG KIM JUN

Abstract: An integrated circuit system is provided including forming a circuit element on a wafer, forming a stress formation layer having a non-uniform profile over the wafer, and 5 forming an interlayer dielectric over the stress formation layer and the wafer. Fig 1

公开(公告)号：SG144034A1

公开(公告)日：2008-07-29

申请号：SG2007177991

申请日：2007-11-16

Applicant: CHARTERED SEMICONDUCTOR MFG ,  IBM ,  INFINEON TECHNOLOGIES AG ,  SAMSUNG

Inventor： WAY TEH YOUNG ,  XIANGDONG CHEN ,  FEN JAMIN F ,  YANG DAEWON ,  BELYANSKY MICHAEL P ,  KNOEFLER ROMAN ,  JUNG KIM JUN

Abstract: INTEGRATED CIRCUIT SYSTEM HAVING STRAINED TRANSISTOR An integrated circuit system is provided including forming a circuit element on a wafer, forming a stress formation layer having a non-uniform profile over the wafer, and forming an interlayer dielectric over the stress formation layer and the wafer.