公开(公告)号：DE3686125D1

公开(公告)日：1992-08-27

申请号：DE3686125

申请日：1986-10-10

Applicant: IBM

Inventor： BEYER KLAUS DIETRICH ,  SILVESTRI VICTOR JOSEPH

IPC: H01L21/76 ,  H01L21/225 ,  H01L21/74 ,  H01L21/763 ,  H01L29/41 ,  H01L21/20

Abstract: A method of simultaneously producing doped silicon filled trenches (20) in areas where a substrate contact is to be produced and trench isolation (18) in other areas. Boro­silicate glass (28) lines the sidewalls of those trenches (20) where a contact is desired and undoped epitaxially grown silicon fills all the trenches. Subsequent heat processing causes the boron in the borosilicate (28) to dope the epitaxial silicon in those trenches. In the other trenches (18), the silicon fill remains undoped except at the bottom where a channel stop (32) exists, thereby forming isolation trenches. The contacts formed over the trenches may be formed by selectively deposition of a highly doped silicon into an opening that overlies a por­tion of the trench and the adjacent substrate surface.

公开(公告)号：DE2306614A1

公开(公告)日：1973-09-20

申请号：DE2306614

申请日：1973-02-10

Applicant: IBM

Inventor： BEYER KLAUS DIETRICH

IPC: H01L29/73 ,  H01L21/22 ,  H01L21/225 ,  H01L21/316 ,  H01L21/331 ,  B01J17/40