公开(公告)号：DE102008030419A1

公开(公告)日：2009-04-02

申请号：DE102008030419

申请日：2008-06-26

Applicant: IBM ,  MACRONIX INT CO LTD ,  QIMONDA AG

Inventor： BREITWISCH MATTHEW J ,  HAPP THOMAS ,  JOSEPH ERIC ,  LUNG HSIANG-LAN ,  PHILIPP JAN BORIS

IPC: H01L27/24

Abstract: An embodiment of the present invention includes a phase change memory (PCM) structure configurable for use as a nonvolatile storage element. The element includes at least one bottom electrode; at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; and at least one heater layer on at least a portion of an upper surface of the phase change material layer, wherein the heater layer has a tapered shape such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer.

公开(公告)号：DE102008008679A1

公开(公告)日：2008-09-18

申请号：DE102008008679

申请日：2008-02-12

Applicant: IBM ,  MACRONIX INT CO LTD ,  QIMONDA AG

Inventor： BREITWISCH MATTHEW J ,  BURR GEOFFREY ,  CHEN CHIEH-FANG ,  CHEN SHIHHUNG ,  CHEN YI-CHOU ,  HAPP THOMAS ,  JOSEPH ERIC ,  LAM CHUNG HON ,  LUNG HSIANG-LAN ,  PHILIPP JAN BORIS ,  SCHROTT ALEJANDRO G

IPC: H01L27/24