TUNNEL EMITTER UPPER VALLEY TRANSITION

    公开(公告)号:CA1165464A

    公开(公告)日:1984-04-10

    申请号:CA399135

    申请日:1982-03-23

    Applicant: IBM

    Abstract: YO980-074 TUNNEL EMITTER UPPER VALLEY TRANSISTOR The invention is a three-terminal transistor structure having five layers of materials that in combination provide conduction by high mobility carrier transport across the base in an energy valley above the conduction band. The conduction is by majority carrier tunneling injection from the emitter and transport at an upper valley level across the base. The resulting structure is capable of switching in speeds of 10-12 seconds.

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