公开(公告)号：DE1764241A1

公开(公告)日：1972-04-27

申请号：DE1764241

申请日：1968-04-30

Applicant: IBM DEUTSCHLAND

Inventor： FRANTZ HERMANN ,  KARL DIPL-ING NAJMANN KNUT

IPC: G11C11/411 ,  H01L27/06 ,  H01L27/07 ,  H03K3/288 ,  H01L19/00

Abstract: 1,245,368. Semiconductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 28 March, 1969 [30 April, 1968], No. 16392/69. Heading H1K. [Also in Division H3] In a monolithic integrated circuit two transistors are formed in a common epitaxial region, which forms a part of each transistor, by means of separate diffused regions, the transistors being connected in a circuit so that in operation the common region functions as the emitter of at least one of the transistors. The transistors are formed simultaneously by diffusing P-type base regions into an N-type epitaxial layer on a P+-type substrate, the epitaxial layer being divided into islands by a P-type isolation diffusion. N-type regions are diffused into the base regions and form the emitters of normally poled transistors and the collectors of inversely poled transistors. The inversely poled transistors exhibit a low gain which may be less than unity if the circuit is gold doped. A memory cell, Fig. 3, comprises five transistors T1 to T5 and two resistors R1 and R2, two of the transistors T3, T4, forming a bi-stable multivibrator, being arranged in a single island and operated so that the common region functions as their emitters, and the other three transistors T1, T2, T5, forming addressing, reading and writing components, being arranged in a second island and operated so that the common region forms the emitters of two of the transistors T1, T2 and the collector of the third transistor T5.

公开(公告)号：DE1774929A1

公开(公告)日：1971-11-04

申请号：DE1774929

申请日：1968-03-01

Applicant: IBM DEUTSCHLAND ,  INT BUERO MASCHINEN GMBH

Inventor： WIEDMANN SIEGFRIED K ,  KARL DIPL-ING NAJMANN KNUT ,  FRANTZ HERMANN

IPC: G11C11/411 ,  H01L27/07 ,  H01L29/8605 ,  H03K3/012 ,  G11C11/40

公开(公告)号：GB1245368A

公开(公告)日：1971-09-08

申请号：GB1639269

申请日：1969-03-28

Applicant: IBM

Inventor： FRANTZ HERMANN ,  NAJMANN KNUT KARL

IPC: G11C11/411 ,  H01L27/06 ,  H01L27/07 ,  H03K3/288

Abstract: 1,245,368. Semiconductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 28 March, 1969 [30 April, 1968], No. 16392/69. Heading H1K. [Also in Division H3] In a monolithic integrated circuit two transistors are formed in a common epitaxial region, which forms a part of each transistor, by means of separate diffused regions, the transistors being connected in a circuit so that in operation the common region functions as the emitter of at least one of the transistors. The transistors are formed simultaneously by diffusing P-type base regions into an N-type epitaxial layer on a P+-type substrate, the epitaxial layer being divided into islands by a P-type isolation diffusion. N-type regions are diffused into the base regions and form the emitters of normally poled transistors and the collectors of inversely poled transistors. The inversely poled transistors exhibit a low gain which may be less than unity if the circuit is gold doped. A memory cell, Fig. 3, comprises five transistors T1 to T5 and two resistors R1 and R2, two of the transistors T3, T4, forming a bi-stable multivibrator, being arranged in a single island and operated so that the common region functions as their emitters, and the other three transistors T1, T2, T5, forming addressing, reading and writing components, being arranged in a second island and operated so that the common region forms the emitters of two of the transistors T1, T2 and the collector of the third transistor T5.

公开(公告)号：DE1524877A1

公开(公告)日：1970-10-22

申请号：DE1524877

申请日：1967-11-06

Applicant: IBM DEUTSCHLAND

Inventor： FRANTZ HERMANN ,  HORST VON DER HEYDEN DIPL-ING

IPC: G11C11/06