公开(公告)号：DE3883188T2

公开(公告)日：1994-03-17

申请号：DE3883188

申请日：1988-12-01

Applicant: IBM

Inventor： HALLER IVAN

IPC: H01L27/12 ,  H01L21/027 ,  H01L21/336 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/784

Abstract: An improved structure and method for fabricating amorphous silicon thin film devices, particularly transistors, is described. In addition to their usual role as gate insulator and optional capping layer (25), the insulator films are chosen to maximize the transmission of photolithographic active light through the structure. These layers (16, 18, 25) are positioned to either side of the amorphous silicon layer (20) which is a light absorbing layer to act as anti-reflective elements. The insulator layers (16, 18, 25) are chosen to have a refractive index different than the substrate and a thickness dimension chosen so the wave components of said lithographically active light reflected at the interfaces of the completed structure interfere destructively.

公开(公告)号：DE3883188D1

公开(公告)日：1993-09-16

申请号：DE3883188

申请日：1988-12-01

Applicant: IBM

Inventor： HALLER IVAN

IPC: H01L27/12 ,  H01L21/027 ,  H01L21/336 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/784

Abstract: An improved structure and method for fabricating amorphous silicon thin film devices, particularly transistors, is described. In addition to their usual role as gate insulator and optional capping layer (25), the insulator films are chosen to maximize the transmission of photolithographic active light through the structure. These layers (16, 18, 25) are positioned to either side of the amorphous silicon layer (20) which is a light absorbing layer to act as anti-reflective elements. The insulator layers (16, 18, 25) are chosen to have a refractive index different than the substrate and a thickness dimension chosen so the wave components of said lithographically active light reflected at the interfaces of the completed structure interfere destructively.

公开(公告)号：DE3778986D1

公开(公告)日：1992-06-17

申请号：DE3778986

申请日：1987-06-30

Applicant: IBM

Inventor： HALLER IVAN

IPC: H01L21/205 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L21/76 ,  H01L21/203

公开(公告)号：DE3169573D1

公开(公告)日：1985-05-02

申请号：DE3169573

申请日：1981-10-09

Applicant: IBM

Inventor： HALLER IVAN

IPC: C08G85/00 ,  B05D7/24 ,  C08G77/00 ,  C08G77/06 ,  C08G77/48 ,  H05K3/28 ,  C08F2/46 ,  H01B3/00