公开(公告)号：CH502050A

公开(公告)日：1971-01-15

申请号：CH46270

申请日：1970-01-14

Applicant: IBM

Inventor： IRVING AMES ,  FRANCOIS MAX D HEURLE ,  RICHARD EDWARD HORSTMANN

IPC: H01L23/52 ,  H01B1/00 ,  H01B1/02 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/29 ,  H01L23/485 ,  H01L27/00 ,  H01L29/43 ,  H05K3/18 ,  H01L19/00

公开(公告)号：DE1295957B

公开(公告)日：1969-05-22

申请号：DEI0023961

申请日：1963-06-27

Applicant: IBM

Inventor： IRVING AMES ,  MARTIN TOXIN ARNOLD ,  VINCENT GREGOR LAWRENCE ,  LEWINE LEINER ALAN

IPC: C23C14/02 ,  C23C14/04 ,  C23C14/58 ,  C23F1/02 ,  G11C11/44 ,  H01B1/00 ,  H01L39/00 ,  H01L39/18 ,  H01L39/24 ,  H01L49/02 ,  H05K3/14 ,  H01C7/16

Abstract: A thin film electrical conductor is made by first vapour depositing a layer of nucleating material (e.g. Au, Ag or Cu) on an insulating substrate (which may include a layer of SiO) and then vapour depositing a thin film of electrically conductive material (e.g. In, Sn or Pb) on the nucleating material, the thickness of the nucleating material varying from a value above a critical range to a value lying within or below the critical range, the critical range being a range of thickness of the nucleating material in which agglomeration of the thin film of conducting material when vapour deposited thereon is inhibited so that the conductive material forms a continuous film. Fig. 2 shows a substrate 20, with an insulating layer 21, e.g. of silicon monoxide, a Au nucleating layer 22 which is 100 angstroms thick, and a film 23 of In which is 2000 angstroms thick. The Au nucleating layer was deposited through a mask and the edges 22a, 22b of the Au layer are slightly tapered due to shadowing effects during the deposition. At those regions above the tapered Au edges where they are between 5 and 10 angstroms thick the In film 23 is continuous and conductive. Everywhere else the In agglomerates, is discontinuous and effectively a non-conductor. The continuous part of the In forms a conductor 5-10 microns wide. The discontinuous portions of the film can be made more discontinuous by heating the entire structure after the films have been deposited. Different width conductors can be produced by producing a different taper to the edge of the Au nucleating layer, e.g. by using different distances between the mask and evaporant while vapour depositing the Au. In another example, a strip conductor is produced by depositing nucleating Au through a mask having a slot with a narrow wire across its centre. The substrate area beneath the wire receives less Au than that beneath the open areas but does receive some due to shadowing. The mask is removed and In is deposited. Only that part of the In which overlies that part of the substrate which was partly masked by the wire is continuous and conductive. Any desired pattern of conductors can be fabricated.