公开(公告)号：WO2008062311A3

公开(公告)日：2009-04-23

申请号：PCT/IB2007004244

申请日：2007-01-23

Applicant: IBM ,  GAUCHER BRIAN P ,  GRYZB JANUSZ ,  LIU DUIXIAN ,  PFEIFFER ULLRICH R ,  ZWICK THOMAS M

Inventor： GAUCHER BRIAN P ,  GRYZB JANUSZ ,  LIU DUIXIAN ,  PFEIFFER ULLRICH R ,  ZWICK THOMAS M

IPC: H03H5/00

CPC classification number: H01P5/107 ,  H01P3/003 ,  H01P3/026

Abstract: Waveguide-to-transmission line transitions are provided for broadband, high performance coupling of power at microwave and millimeter wave frequencies. In one aspect, a transition apparatus (10) includes a transition housing (11) comprising a rectangular waveguide channel (C) and an aperture (13) formed through a broad wall (11a) of the rectangular waveguide channel (C), a substrate ( 12) having a first surface and a second surface opposite the first surface, mid a planar transmission line (12a) and a planar probe (12b) formed on the first surface, wherein the planar transmission line (12a) comprises a first conductive strip and a second conductive strip, wherein the planar probe (12b) is connected to, and extends from, an end of the first conductive strip, and wherein an end of the second conductive strip is terminated by a stub and wherein the substrate (22) is positioned in the aperture (13) such that the printed probe (12b) protrudes into the rectangular waveguide channel (C) at an offset from a center of the broad wall (11a) and wherein the ends of the first and second conductive strip are aligned to an inner surface of the broad wail (11a) of the rectangular waveguide channel (C).

Abstract translation: 提供波导到传输线路转换用于宽带，高性能的微波和毫米波频率耦合。 一方面，一种过渡装置（10）包括：过渡壳体（11），包括矩形波导通道（C）和通过矩形波导通道（C）的宽壁（11a）形成的孔（13），基底 （12）具有第一表面和与第一表面相对的第二表面，在平面传输线（12a）的中间和形成在第一表面上的平面探针（12b），其中平面传输线（12a）包括第一导电条 和第二导电条，其中所述平面探针（12b）连接到所述第一导电条的端部并从所述第一导电条的端部延伸，并且其中所述第二导电条的端部由短截线终止，并且其中所述基底（22） 被定位在所述孔（13）中，使得所述印刷探针（12b）从所述宽壁（11a）的中心偏移地突出到所述矩形波导通道（C）中，并且其中所述第一和第二导电条的端部 与广泛的内表面对齐 矩形波导通道（C）的壁（11a）。

公开(公告)号：WO2006133108A3

公开(公告)日：2007-11-29

申请号：PCT/US2006021770

申请日：2006-06-05

Applicant: IBM ,  CHEN ZHI NING ,  LIU DUIXIAN ,  PFEIFFER ULLRICH R ,  ZWICK THOMAS M

Inventor： CHEN ZHI NING ,  LIU DUIXIAN ,  PFEIFFER ULLRICH R ,  ZWICK THOMAS M

IPC: H04B1/28

CPC classification number: H01Q1/22 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01087 ,  H01L2924/09701 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01Q1/2283 ,  H01L2924/00

Abstract: Apparatus and methods are provided for integrally packaging semiconductor IC (integrated circuit) chips and antenna devices which are integrally constructed from package frame structures (e.g., lead frame, package carrier, package core, etc.), to thereby form compact integrated radio/wireless communications systems for millimeter wave applications. For example, an electronic apparatus (30) includes a package frame (11) having an antenna (12) that is integrally formed as part of the package frame (11), an IC (integrated circuit) chip (13) mounted to the package frame (11), interconnects (19) that provide electrical connections to the IC chip (13) and the antenna (12), and a package cover (15).

Abstract translation: 提供了用于整体封装由封装框架结构（例如，引线框架，封装载体，封装芯等）整体构建的半导体IC（集成电路）芯片和天线装置的集成封装，从而形成紧凑的集成无线电/无线 通信系统用于毫米波应用。 例如，电子设备（30）包括具有整体形成为封装框架（11）的一部分的天线（12）的封装框架（11），安装在封装框架（11）上的IC（集成电路）芯片 框架（11），提供到IC芯片（13）和天线（12）的电连接的互连（19）和封装盖（15）。

公开(公告)号：WO2006124087A2

公开(公告)日：2006-11-23

申请号：PCT/US2006005012

申请日：2006-02-10

Applicant: IBM ,  FLOYD BRIAN A ,  GARCIA ALBERTO VALDES ,  PFEIFFER ULLRICH R ,  REYNOLDS SCOTT KEVIN

Inventor： FLOYD BRIAN A ,  GARCIA ALBERTO VALDES ,  PFEIFFER ULLRICH R ,  REYNOLDS SCOTT KEVIN

IPC: H03F3/217

CPC classification number: H03F3/2176 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/411 ,  H03F2200/451 ,  H03F2200/75

Abstract: Circuits and methods are provided for implementing highly efficient switch-mode power amplifiers using BJTs (bipolar junction transistors) as active switching devices at millimeter- wave frequencies. For example, a power amplifier circuit (100) includes an active switch device comprising a BJT (bipolar junction transistor) (Tl) and an input network (105), (106) coupled to a base of the BJT (Tl) to drive the active switch device to achieve highly efficient switch-mode (e.g., Class E) operation at millimeter wave frequencies (e.g., 60 GHz). The input network (105), (106), which may be a passive or active driver network, is designed to provide optimal driving conditions. For instance, the input network (105), (106) is designed to present a real input impedance in a range of about 7 Ohms to about 15 Ohms as seen from the base of the active switch device (Tl). Another optimal driving condition includes the input network (105), (106) being designed to provide an asymmetrical drive current to the base of the active switch device (Tl), wherein the negative peak base current exceeds the positive peak base current. Further, the input network is designed to provide an asymmetrical drive base current to the active switch device (Tl) such that the base voltage has a swing that does not exceed about 400 mVpp (millivolts peak-to-peak).

Abstract translation: 提供电路和方法，用于实现使用BJT（双极结型晶体管）作为毫米波频率的有源开关器件的高效开关模式功率放大器。 例如，功率放大器电路（100）包括有源开关器件，其包括耦合到BJT（T1）的基极的BJT（双极结型晶体管）（T1）和输入网络（105）（106），以驱动 主动开关装置，以实现毫米波频率（例如，60GHz）下的高效开关模式（例如，E类）操作。 可以是被动或主动的驱动器网络的输入网络（105）（106）被设计成提供最佳驾驶条件。 例如，输入网络（105）（106）被设计成在从有源开关器件（T1）的基极看到的情况下，呈现大约7欧姆到大约15欧姆的范围内的实际输入阻抗。 另一个最佳驱动条件包括输入网络（105），（106）被设计成向有源开关器件（T1）的基极提供非对称驱动电流，其中负峰值基极电流超过正峰值基极电流。 此外，输入网络被设计为向有源开关器件（T1）提供不对称驱动基极电流，使得基极电压具有不超过约400mVpp（毫伏峰峰值）的摆幅。