公开(公告)号：SG46484A1

公开(公告)日：1998-02-20

申请号：SG1996005017

申请日：1994-12-13

Applicant: IBM

Inventor： PINARBASI MUSTAFA

IPC: G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F41/14 ,  H01L43/08 ,  H01L43/12

Abstract: In a magnetoresistive read transducer, a material which is inert with respect to the soft film magnetic biasing layer is formed at the surface of the substrate prior to soft film deposition. In a preferred embodiment of the present invention, a substrate surface layer of metal such as Cr or Ta is used. These metals have high resistivity due to partial oxidation when deposited on the substrate to reduce shunting of sensing current through the magnetoresistive layer, and further acts as a barrier to protect the soft film from substrate interface contamination. The surface layer also acts as a seed layer to set the soft film magnetization orientation in a well-defined direction therefore reducing magnetic instability.

公开(公告)号：SG30326A1

公开(公告)日：1996-06-01

申请号：SG1995000164

申请日：1995-03-25

Applicant: IBM

Inventor： LATIMER JACQUELINE K ,  CHEN MAO-MIN ,  GUTBERLET MARY KATHRYN ,  KROUNBI MOHAMAD TOWFIK ,  PINARBASI MUSTAFA

IPC: G11B5/39

公开(公告)号：DE69812828T2

公开(公告)日：2004-02-05

申请号：DE69812828

申请日：1998-09-14

Applicant: IBM

Inventor： PINARBASI MUSTAFA

IPC: C23C14/04 ,  C23C14/46

Abstract: An ion beam sputtering system having a chamber and a target, a substrate, and a movable flux regulator located between the target and the substrate in the chamber. The position of the movable flux regulator relative to the deposition substrate affects the thickness uniformity of thin films deposited on the substrate in the ion beam sputtering system.

公开(公告)号：DE10023375A1

公开(公告)日：2000-11-23

申请号：DE10023375

申请日：2000-05-12

Applicant: IBM

Inventor： PINARBASI MUSTAFA

IPC: G11B5/31 ,  G11B5/39 ,  H01F10/08 ,  H01F10/12 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08

Abstract: Magnetic reading head (72) contains a spin valve sensor (130) with a ferromagnetic free layer whose magnetic moment can rotate in reaction to a signal field free from a first direction, a ferromagnetic anchored layer structure having a magnetic moment, a non-magnetic electrically conducting intermediate layer between the free and anchored layer structure, an antiferromagnetic anchoring structure (132) coupled with the anchored layer structure to establish the magnetic moment of the anchored layer structure in a second direction, and a two-layered base layer structure with a first metal oxide base layer and a second non-magnetic metal base layer.

公开(公告)号：GB2349735B

公开(公告)日：2003-06-25

申请号：GB0007168

申请日：2000-03-27

Applicant: IBM

Inventor： PINARBASI MUSTAFA

IPC: G11B5/39 ,  G11B20/10 ,  H01F10/14 ,  H01F10/16 ,  H01F10/30 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/12

Abstract: First and second antiparallel (AP) pinned layers of an AP pinned layer structure are cobalt iron (CoFe) which increases the GMR (magnetoresistive coefficient dr/R) of a spin valve sensor by 10% with improved magnetic stability over a spin valve sensor where the first and second AP pinned layers are cobalt (Co).

公开(公告)号：SG83127A1

公开(公告)日：2001-09-18

申请号：SG1999002106

申请日：1999-05-03

Applicant: IBM

Inventor： PINARBASI MUSTAFA

IPC: H01F41/18 ,  C23C14/46 ,  C23C14/56 ,  G11B5/31 ,  G11B5/39 ,  H01F41/30 ,  H01L43/12 ,  C23C14/00

Abstract: A dual chamber deposition system comprising two ion beam sputtering (IBS)deposition chambers connected by a wafer handler chamber for depositions of multilayer thin film structures with improved process throughput. Reactive ion beam sputtering depositions and metal layer depositions on a substrate may be carried out in separate IBS deposition chambers while maintaining vacuum conditions throughout the process. A process for ion beam sputter deposition of spin valve (SV) magnetoresistive sensor layers having an AFM layer formed of NiO where reactive sputtering deposition of the NiO is carried out in a separate IBS deposition chamber from the subsequent metal layer depositions improves system throughput while maintaining SV sensor performance.

公开(公告)号：SG54542A1

公开(公告)日：1998-11-16

申请号：SG1997002861

申请日：1997-08-08

Applicant: IBM

Inventor： GILL HARDAYAL SINGH ,  PINARBASI MUSTAFA

IPC: G11B5/39 ,  G11B5/127

Abstract: A high magnetization, high resistivity, low corrosion and near zero magnetostriction soft adjacent layer (SAL) is provided for a magnetoresistive (MR) sensor of a read head. The MR sensor may either be an anisotropic MR (AMR) sensor or a spin valve sensor. In both sensors the SAL is CoHfNb or CoHfNbFe. The Hf is added to reduce corrosion and the Hf and Nb are balanced to provide near zero magnetostriction. The addition of Fe is an enhancer for reducing negative magnetostriction without diluting the magnetism of the alloy. Since CoHfNb has significantly higher magnetization than NiFeCr the SAL layer of CoHfNb can be thinner than the SAL of NiFeCr which results in a significantly higher resistance SAL. The higher resistance SAL equates to less shunting of the sense current through the SAL and better signal performance of the MR read head.

公开(公告)号：GB2285331B

公开(公告)日：1998-04-08

申请号：GB9425141

申请日：1994-12-13

Applicant: IBM

Inventor： PINARBASI MUSTAFA

IPC: G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F41/14 ,  H01L43/08 ,  H01L43/12

Abstract: In a magnetoresistive read transducer, a material which is inert with respect to the soft film magnetic biasing layer is formed at the surface of the substrate prior to soft film deposition. In a preferred embodiment of the present invention, a substrate surface layer of metal such as Cr or Ta is used. These metals have high resistivity due to partial oxidation when deposited on the substrate to reduce shunting of sensing current through the magnetoresistive layer, and further acts as a barrier to protect the soft film from substrate interface contamination. The surface layer also acts as a seed layer to set the soft film magnetization orientation in a well-defined direction therefore reducing magnetic instability.

公开(公告)号：GB2351597B

公开(公告)日：2003-08-06

申请号：GB0009809

申请日：2000-04-25

Applicant: IBM

Inventor： PINARBASI MUSTAFA

IPC: G11B5/31 ,  G01R33/09 ,  G11B5/012 ,  G11B5/39

Abstract: A bilayer interlayer comprising first and second layers of cobalt iron (CoFe) and nickel iron (NiFe) respectively is located between a nickel oxide pinning layer and a cobalt iron (CoFe) pinned layer structure of a spin valve sensor. The pinned layer structure may be an antiparallel (AP) pinned layer structure or a single pinned layer of cobalt iron (CoFe). The bilayer interlayer reduces the coercivity of the cobalt iron (CoFe) pinned layer structure so that a magnetic moment of the pinned layer structure is returned to its original position by exchange coupling with the pinning layer when the magnetic moment is rotated to some direction other than the pinned direction. The spin valve sensor manifests an improved magnetoresistive coefficient (dr/R) and thermal stability.

公开(公告)号：DE69812828D1

公开(公告)日：2003-05-08

申请号：DE69812828

申请日：1998-09-14

Applicant: IBM

Inventor： PINARBASI MUSTAFA

IPC: C23C14/04 ,  C23C14/46

Abstract: An ion beam sputtering system having a chamber and a target, a substrate, and a movable flux regulator located between the target and the substrate in the chamber. The position of the movable flux regulator relative to the deposition substrate affects the thickness uniformity of thin films deposited on the substrate in the ion beam sputtering system.