公开(公告)号：JP2005327094A

公开(公告)日：2005-11-24

申请号：JP2004144714

申请日：2004-05-14

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： SAKAMOTO MASAHARU ,  MURAO TAKAAKI ,  SATO NAOTO ,  SAITO ARATA

IPC: G06F17/50 ,  G06F9/44

CPC classification number: G06F17/5022

Abstract: PROBLEM TO BE SOLVED: To provide a UML design method by which architectural design seeking after an optimum design parameter can be performed while seeing through an entire system.
SOLUTION: The UML design method uses a profile stored with design parameters to convert an object system into a UML model, and designs. The UML design method stores a stereotype and a value with a tag as the design parameters in the profile, annotates the stored stereotype and value with the tag for a UML model of the object system, associates the annotated stereotype and value with the tag to each class constituting the UML model, and displays the associated stereotype, value with the tag and UML model on a GUI (graphical user interface) screen.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种UML设计方法，通过这种方法，通过整个系统查看可以执行最佳设计参数后的架构设计。 解决方案：UML设计方法使用存储有设计参数的配置文件将对象系统转换为UML模型，并进行设计。 UML设计方法将原型和具有标签的值作为设计参数存储在配置文件中，使用对象系统的UML模型的标签对存储的原型和值进行注释，将注释的构造型和值与标签关联到每个 构成UML模型的类，并在GUI（图形用户界面）屏幕上显示与标签和UML模型相关的原型，值。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2010140020A

公开(公告)日：2010-06-24

申请号：JP2009256152

申请日：2009-11-09

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： INOUE TADANORI ,  TIAN KEHAN ,  MELVILLE DAVID O ,  SAKAMOTO MASAHARU ,  MUTA HIDEMASA ,  ROSENBLUTH ALAN E

IPC: G03F1/08 ,  H01L21/027

CPC classification number: G03F1/68 ,  G03F1/78

Abstract: PROBLEM TO BE SOLVED: To provide a method for computing manufacturability of a lithographic mask to be used for fabricating a semiconductor device. SOLUTION: A set of a plurality of target edges is selected from mask layout data of a lithographic mask (402). Then, target edge pairs are selected from the selected set of target edges (404). The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is computed based on the target edge pairs selected (406). The manufacturability of the lithographic mask is output (408). The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于计算用于制造半导体器件的光刻掩模的可制造性的方法。 解决方案：从光刻掩模（402）的掩模布局数据中选择一组多个目标边缘。 然后，从所选择的一组目标边缘中选择目标边缘对（404）。 基于所选择的目标边缘对（406）计算光刻掩模的可制造性，包括制造光刻掩模的制造损失。 输出光刻掩模的可制造性（408）。 光刻掩模的可制造性取决于制造光刻掩模的制造损失。 版权所有（C）2010，JPO＆INPIT