公开(公告)号：JP2005051246A

公开(公告)日：2005-02-24

申请号：JP2004222267

申请日：2004-07-29

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CHENG KANGGUO ,  RAMACHANDORA DEIVAKARUNI ,  SUNG C Y

IPC: H01L27/108 ,  H01L21/336 ,  H01L21/8242 ,  H01L27/02

CPC classification number: H01L27/10876 ,  H01L27/0207 ,  H01L27/10864 ,  H01L27/1087 ,  H01L29/945

Abstract: PROBLEM TO BE SOLVED: To provide a method and a structure for a vertical DRAM device having a self-aligning function of shaping upper trench. SOLUTION: The method and the structure of a memory storage cell in a semiconductor substrate include forming of a dopant source material, covering a lower portion of a deep trench formed in the substrate. The upper portion of the trench is generally shaped into a rectangular form, and an embedded electrode plate of a trench capacitor by annealing the dopant source material. The embedded electrode plate is self-aligned, with respect to the shaped upper-portion of the trench. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 解决的问题：提供一种具有成形上沟槽自对准功能的垂直DRAM器件的方法和结构。 解决方案：半导体衬底中的存储器存储单元的方法和结构包括形成掺杂剂源材料，覆盖形成在衬底中的深沟槽的下部。 沟槽的上部通常通过对掺杂剂源材料进行退火而成形为矩形形状，以及沟槽电容器的嵌入式电极板。 嵌入式电极板相对于沟槽的成形上部自对准。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005019994A

公开(公告)日：2005-01-20

申请号：JP2004183609

申请日：2004-06-22

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CHENG KANGGUO ,  RAMACHANDORA DEIVAKARUNI

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/3215 ,  H01L21/8242

CPC classification number: H01L28/60 ,  H01L21/3215 ,  H01L27/1087

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a buried plate in a trench capacitor, thereby overcoming limitation in the conventional method.
SOLUTION: A dopant source material such as ASG is completely filled into a trench. Next, a recess is formed on this dopant source material, and a collar material is deposited thereon. Thus, a collar is formed on the upper side portion of the trench. After the buried plate is formed through drive-in of the dopant, the dopant source material is removed and the collar material may be removed.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种在沟槽电容器中形成掩埋板的方法，从而克服了常规方法中的限制。 解决方案：诸如ASG的掺杂剂源材料被完全填充到沟槽中。 接下来，在该掺杂剂源材料上形成凹部，并且在其上沉积套环材料。 因此，在沟槽的上侧部分上形成有套环。 在通过掺杂剂的驱入形成掩埋板之后，去除掺杂剂源材料并且可以去除套环材料。 版权所有（C）2005，JPO＆NCIPI