INTERCONNECTION STRUCTURE FABRICATION USING GRAYSCALE LITHOGRAPHY

    公开(公告)号:US20210074620A1

    公开(公告)日:2021-03-11

    申请号:US16564168

    申请日:2019-09-09

    Abstract: An lithographic reticle may be formed comprising a transparent substrate, a substantially opaque mask formed on the transparent substrate that defines at least one exposure window, wherein the at least one exposure window has a first end, a first filter formed on the transparent substrate within the at least one exposure window and abutting the first end thereof, and a second filter formed on the transparent substrate within the at least one exposure window and abutting the first filter, wherein an average transmissivity of the first filter is substantially one half of a transmissivity of the second filter. In another embodiment, the at least one exposure window includes a third filter abutting the second end and is adjacent the second filter. Further embodiments of the present description include interconnection structures and systems fabricated using the lithographic reticle.

    ELECTROLESS METAL-DEFINED THIN PAD FIRST LEVEL INTERCONNECTS FOR LITHOGRAPHICALLY DEFINED VIAS

    公开(公告)号:US20220084927A1

    公开(公告)日:2022-03-17

    申请号:US17536711

    申请日:2021-11-29

    Abstract: A package substrate, comprising a package comprising a substrate, the substrate comprising a dielectric layer, a via extending to a top surface of the dielectric layer; and a bond pad stack having a central axis and extending laterally from the via over the first layer. The bond pad stack is structurally integral with the via, wherein the bond pad stack comprises a first layer comprising a first metal disposed on the top of the via and extends laterally from the top of the via over the top surface of the dielectric layer adjacent to the via. The first layer is bonded to the top of the via and the dielectric layer, and a second layer is disposed over the first layer. A third layer is disposed over the second layer. The second layer comprises a second metal and the third layer comprises a third metal. The second layer and the third layer are electrically coupled to the via.

    INTERCONNECTION STRUCTURE FABRICATION USING GRAYSCALE LITHOGRAPHY

    公开(公告)号:US20210343635A1

    公开(公告)日:2021-11-04

    申请号:US17375360

    申请日:2021-07-14

    Abstract: An lithographic reticle may be formed comprising a transparent substrate, a substantially opaque mask formed on the transparent substrate that defines at least one exposure window, wherein the at least one exposure window has a first end, a first filter formed on the transparent substrate within the at least one exposure window and abutting the first end thereof, and a second filter formed on the transparent substrate within the at least one exposure window and abutting the first filter, wherein an average transmissivity of the first filter is substantially one half of a transmissivity of the second filter. In another embodiment, the at least one exposure window includes a third filter abutting the second end and is adjacent the second filter. Further embodiments of the present description include interconnection structures and systems fabricated using the lithographic reticle.

    HEAT SPREADING LAYER INTEGRATED WITHIN A COMPOSITE IC DIE STRUCTURE AND METHODS OF FORMING THE SAME

    公开(公告)号:US20210202347A1

    公开(公告)日:2021-07-01

    申请号:US16727703

    申请日:2019-12-26

    Abstract: A heat spreading material is integrated into a composite die structure including a first IC die having a first dielectric material and a first electrical interconnect structure, and a second IC die having a second dielectric material and a second electrical interconnect structure. The composite die structure may include a composite electrical interconnect structure comprising the first interconnect structure in direct contact with the second interconnect structure at a bond interface. The heat spreading material may be within at least a portion of a dielectric area through which the bond interface extends. The heat spreading material may be located within one or more dielectric materials surrounding the composite interconnect structure, and direct a flow of heat generated by one or more of the first and second IC dies.

    IC ASSEMBLIES WITH METAL PASSIVATION AT BOND INTERFACES

    公开(公告)号:US20250112127A1

    公开(公告)日:2025-04-03

    申请号:US18374573

    申请日:2023-09-28

    Abstract: A surface finish on an integrated circuit (IC) die structure or a substrate structure to which an IC die structure is to be bonded has a chemical composition distinct from that of underlying metallization. The surface finish may comprise a Cu—Ni alloy. Optionally, the Cu—Ni alloy may further comprise Mn. Alternatively, the surface finish may comprise a noble metal, such as Pd, Pt, or Ru or may comprise self-assembled monolayer (SAM) molecules comprising Si and C. During the bonding process a biphilic surface on the IC die structure or substrate structure may facilitate liquid droplet-based fine alignment of the IC die structure to a host structure. Prior to bonding, the surface finish may be applied upon a top surface of metallization features and may inhibit oxidation of the top surface exposed to the liquid droplet.

    HEAT SPREADING LAYER INTEGRATED WITHIN A COMPOSITE IC DIE STRUCTURE AND METHODS OF FORMING THE SAME

    公开(公告)号:US20210280492A1

    公开(公告)日:2021-09-09

    申请号:US17318887

    申请日:2021-05-12

    Abstract: A heat spreading material is integrated into a composite die structure including a first IC die having a first dielectric material and a first electrical interconnect structure, and a second IC die having a second dielectric material and a second electrical interconnect structure. The composite die structure may include a composite electrical interconnect structure comprising the first interconnect structure in direct contact with the second interconnect structure at a bond interface. The heat spreading material may be within at least a portion of a dielectric area through which the bond interface extends. The heat spreading material may be located within one or more dielectric materials surrounding the composite interconnect structure, and direct a flow of heat generated by one or more of the first and second IC dies.

    Interconnection structure fabrication using grayscale lithography

    公开(公告)号:US11101205B2

    公开(公告)日:2021-08-24

    申请号:US16564168

    申请日:2019-09-09

    Abstract: An lithographic reticle may be formed comprising a transparent substrate, a substantially opaque mask formed on the transparent substrate that defines at least one exposure window, wherein the at least one exposure window has a first end, a first filter formed on the transparent substrate within the at least one exposure window and abutting the first end thereof, and a second filter formed on the transparent substrate within the at least one exposure window and abutting the first filter, wherein an average transmissivity of the first filter is substantially one half of a transmissivity of the second filter. In another embodiment, the at least one exposure window includes a third filter abutting the second end and is adjacent the second filter. Further embodiments of the present description include interconnection structures and systems fabricated using the lithographic reticle.

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