公开(公告)号：US10199291B2

公开(公告)日：2019-02-05

申请号：US15683460

申请日：2017-08-22

Applicant: Infineon Technologies AG

Inventor： Andreas Riegler ,  Angelika Koprowski ,  Mathias Plappert ,  Frank Wolter

IPC: H01L29/78 ,  H01L21/66 ,  H01L29/739 ,  H01L29/45 ,  H01L29/47

Abstract: A semiconductor arrangement is presented. The semiconductor arrangement comprises a semiconductor body, the semiconductor body including a semiconductor drift region, wherein the semiconductor drift region has dopants of a first conductivity type; a first semiconductor sense region and a second semiconductor sense region, wherein each of the first semiconductor sense region and the second semiconductor sense region is electrically connected to the semiconductor drift region and has dopants of a second conductivity type different from said first conductivity type; a first metal contact comprising a first metal material, the first metal contact being in contact with the first semiconductor sense region, wherein a transition between the first metal contact and the first semiconductor sense region forms a first metal-to-semiconductor transition; a second metal contact comprising a second metal material different from said first metal material, the second metal contact being separated from the first metal contact and in contact with the second semiconductor sense region, a transition between the second metal contact and the second semiconductor sense region forming a second metal-to-semiconductor transition different from said first metal-to-semiconductor transition; first electrical transmission means, the first electrical transmission means being arranged and configured for providing a first sense signal derived from an electrical parameter of the first metal contact to a first signal input of a sense signal processing unit; and second electrical transmission means separated from said first electrical transmission means, the second electrical transmission means being arranged and configured for providing a second sense signal derived from an electrical parameter of the second metal contact to a second signal input of said sense signal processing unit.

公开(公告)号：US20180053663A1

公开(公告)日：2018-02-22

申请号：US15677091

申请日：2017-08-15

Applicant: Infineon Technologies AG

Inventor： Mathias Plappert ,  Stefan Krivec ,  Andreas Riegler ,  Karin Schrettlinger

IPC: H01L21/3215 ,  H01L23/29 ,  H01L29/739 ,  H01L29/66 ,  H01L29/06 ,  H01L23/31

CPC classification number: H01L21/32155 ,  H01L21/76886 ,  H01L23/293 ,  H01L23/298 ,  H01L23/3171 ,  H01L23/3192 ,  H01L24/03 ,  H01L29/0619 ,  H01L29/401 ,  H01L29/417 ,  H01L29/41716 ,  H01L29/66325 ,  H01L29/7393 ,  H01L29/7436

Abstract: In various embodiments, a method is provided. The method includes forming a metallization layer above at least one first region of a substrate. After forming the metallization layer at least one second region of the substrate is free of the metallization layer. The method further includes forming a barrier layer above the at least one first region of the substrate and above the at least one second region of the substrate. The barrier layer in the at least one first region of the substrate directly adjoins the metallization layer. The method further includes removing the barrier layer in the at least one first region of the substrate by drive-in of the barrier layer into the metallization layer.