公开(公告)号：US09741894B2

公开(公告)日：2017-08-22

申请号：US15054049

申请日：2016-02-25

Applicant: Intevac, Inc.

Inventor： Babak Adibi ,  Moon Chun

IPC: H01L31/18 ,  C23C14/04 ,  C23C14/48 ,  H01J37/32 ,  H01L21/223 ,  H01J37/18 ,  H01J37/317 ,  H01L31/068

CPC classification number: H01L31/1876 ,  C23C14/042 ,  C23C14/48 ,  H01J37/185 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32422 ,  H01J2237/0437 ,  H01J2237/184 ,  H01J2237/201 ,  H01J2237/327 ,  H01J2237/3365 ,  H01L21/2236 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be biased by a power supply; and a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate.

公开(公告)号：US20170236740A1

公开(公告)日：2017-08-17

申请号：US15410634

申请日：2017-01-19

Applicant: Intevac, Inc.

Inventor： Terry Bluck ,  Babak Adibi ,  Vinay Prabhakar ,  William Eugene Runstadler, JR.

IPC: H01L21/683 ,  H01L21/66

CPC classification number: H01L21/6833 ,  H01L21/67288 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/6875 ,  H01L22/12

Abstract: A chuck for wafer processing that counters the deleterious effects of thermal expansion of the wafer. Also, a combination of chuck and shadow mask arrangement that maintains relative alignment between openings in the mask and the wafer in spite of thermal expansion of the wafer. A method for fabricating a solar cell by ion implant, while maintaining relative alignment of the implanted features during thermal expansion of the wafer.

公开(公告)号：US20170009337A1

公开(公告)日：2017-01-12

申请号：US15203747

申请日：2016-07-06

Applicant: Intevac, Inc.

Inventor： Terry Bluck ,  Babak Adibi

IPC: C23C14/48

CPC classification number: C23C14/48 ,  C03C17/245 ,  C03C17/36 ,  C03C17/3626 ,  C03C17/3644 ,  C03C17/366 ,  C23C14/0652 ,  C23C14/083 ,  C23C14/568

Abstract: The use of non-mass analyzed ion implanter is advantageous in such application as it generates ion implanting at different depth depending on the ions energy and mass. This allows for gaining advantage from lubricity offered as a result of the very light deposition on the surface, and at the same time the hardness provided by the intercalated ions implanted below it, providing benefits for cover glass, low E enhancement, and other similar materials. In further aspects, ion implantation is used to create other desirable film properties such anti-microbial and corrosion resistance.

Abstract translation: 使用非质量分析的离子注入机在这种应用中是有利的，因为它根据离子能量和质量在不同深度产生离子注入。 这允许由于表面上非常轻的沉积而获得的润滑性获得优势，并且同时由插入的离子提供的硬度在其下方植入，为盖玻片，低E增强和其它类似材料提供了益处 。 在另外的方面，使用离子注入来产生其它所需的膜性质如抗微生物和耐腐蚀性。

公开(公告)号：US20160322523A1

公开(公告)日：2016-11-03

申请号：US15208409

申请日：2016-07-12

Applicant: INTEVAC, INC.

Inventor： Henry Hieslmair ,  Babak Adibi

IPC: H01L31/0352 ,  H01L31/068 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/03529 ,  H01L31/022433 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photovoltaic cell having a graded doped region such as a graded emitter and methods of making photovoltaic cells having graded doped regions such as a graded emitter are disclosed. Doping is adjusted across a surface to minimize resistive (I2R) power losses. The graded emitters provide a gradual change in sheet resistance over the entire distance between the lines. The graded emitter profile may have a lower sheet resistance near the metal lines and a higher sheet resistance farther from the metal line edges. The sheet resistance is graded such that the sheet resistance is lower where I2R power losses are highest due to current crowding. One advantage of graded emitters over selective emitters is improved efficiency. An additional advantage of graded emitters over selective emitters is improved ease of aligning metallization to the low sheet resistance regions.

Abstract translation: 公开了一种具有渐变掺杂区域（诸如渐变发射极）的光伏电池和制造具有渐变掺杂区域（诸如渐变发射极）的光伏电池的方法。 在表面上调整掺杂以最小化电阻（I2R）功率损耗。 分级发射器在线之间的整个距离上提供薄层电阻的逐渐变化。 渐变的发射极轮廓可以在金属线附近具有较低的薄层电阻，并且具有比金属线边缘更远的更高的薄层电阻。 薄片电阻被分级，使得由于电流拥挤，I2R功率损耗最高的薄层电阻较低。 分级发射器超过选择性发射器的一个优点是提高了效率。 渐变发射体超过选择性发射体的另外的优点是改善了将金属化对准低电阻区域的容易性。

公开(公告)号：US10446430B2

公开(公告)日：2019-10-15

申请号：US15410634

申请日：2017-01-19

Applicant: Intevac, Inc.

Inventor： Terry Bluck ,  Babak Adibi ,  Vinay Prabhakar ,  William Eugene Runstadler, Jr.

IPC: H01L21/683 ,  H01L21/66 ,  H01L21/67 ,  H01L21/687

Abstract: A chuck for wafer processing that counters the deleterious effects of thermal expansion of the wafer. Also, a combination of chuck and shadow mask arrangement that maintains relative alignment between openings in the mask and the wafer in spite of thermal expansion of the wafer. A method for fabricating a solar cell by ion implant, while maintaining relative alignment of the implanted features during thermal expansion of the wafer.

公开(公告)号：US20190027636A1

公开(公告)日：2019-01-24

申请号：US16040423

申请日：2018-07-19

Applicant: Intevac, Inc.

Inventor： William Eugene Runstadler, JR. ,  Babak Adibi ,  Terry Bluck

IPC: H01L31/18 ,  H01L31/068 ,  H01J37/20 ,  H01J37/304 ,  H01J37/317

Abstract: A system for transporting substrates and precisely alignment the substrates to shadow masks. The system decouples the functions of transporting the substrates, vertically aligning the substrates, and horizontally aligning the substrates. The transport system includes a carriage upon which plurality of pedestals are loosely positioned, each of the pedestals includes a base having vertical alignment wheels to place the substrate in precise vertical alignment. Two sidebars are configured to freely slide on the base. Each of the sidebars includes a set of horizontal alignment wheels that precisely align the substrate in the horizontal direction. Substrate support claws are attached to the sidebars in precise alignment to the vertical alignment wheels and the horizontal alignment wheels.

公开(公告)号：US20190027635A1

公开(公告)日：2019-01-24

申请号：US16040387

申请日：2018-07-19

Applicant: Intevac, Inc.

Inventor： Hoang Huy Vu ,  Babak Adibi ,  Terry Bluck

IPC: H01L31/18 ,  H01J37/317 ,  H01J37/20 ,  H01L31/0203

Abstract: A system for transporting substrates and precisely align the substrates horizontally and vertically. The system decouples the functions of transporting the substrates, vertically aligning the substrates, and horizontally aligning the substrates. The transport system includes a carriage upon which plurality of chuck assemblies are loosely positioned, each of the chuck assemblies includes a base having vertical alignment wheels to place the substrate in precise vertical alignment. A pedestal is configured to freely slide on the base. The pedestal includes a set of horizontal alignment wheels that precisely align the pedestal in the horizontal direction. An electrostatic chuck is magnetically held to the pedestal.

公开(公告)号：US20180096823A1

公开(公告)日：2018-04-05

申请号：US15721534

申请日：2017-09-29

Applicant: Intevac, Inc.

Inventor： Terry Bluck ,  Babak Adibi

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32422 ,  H01J37/32568 ,  H01J37/32779 ,  H01J2237/3344 ,  H01J2237/3365

Abstract: An RF antenna system for a plasma chamber comprises an RF input coupling a trunk to an RO power supply; two main branches electrically connected to the main trunk, each of the two main branches coupled to a plurality of rod antennas; a plurality of tuning devices, each provided between one of the rod antennas and the corresponding main branch.

公开(公告)号：US09850570B2

公开(公告)日：2017-12-26

申请号：US15203747

申请日：2016-07-06

Applicant: Intevac, Inc.

Inventor： Terry Bluck ,  Babak Adibi

IPC: B32B15/04 ,  B32B17/06 ,  C23C14/48 ,  C03C17/245 ,  C23C14/06 ,  C23C14/08 ,  C23C14/56

CPC classification number: C23C14/48 ,  C03C17/245 ,  C03C17/36 ,  C03C17/3626 ,  C03C17/3644 ,  C03C17/366 ,  C23C14/0652 ,  C23C14/083 ,  C23C14/568

Abstract: The use of non-mass analyzed ion implanter is advantageous in such application as it generates ion implanting at different depth depending on the ions energy and mass. This allows for gaining advantage from lubricity offered as a result of the very light deposition on the surface, and at the same time the hardness provided by the intercalated ions implanted below it, providing benefits for cover glass, low E enhancement, and other similar materials. In further aspects, ion implantation is used to create other desirable film properties such anti-microbial and corrosion resistance.

公开(公告)号：US20170345964A1

公开(公告)日：2017-11-30

申请号：US15681936

申请日：2017-08-21

Applicant: Intevac, Inc.

Inventor： Babak Adibi ,  Moon Chun

IPC: H01L31/18 ,  C23C14/48 ,  H01L21/223 ,  H01J37/317 ,  H01J37/32 ,  H01L31/068 ,  C23C14/04 ,  H01J37/18

CPC classification number: H01L31/1876 ,  C23C14/042 ,  C23C14/48 ,  H01J37/185 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32422 ,  H01J2237/0437 ,  H01J2237/184 ,  H01J2237/201 ,  H01J2237/327 ,  H01J2237/3365 ,  H01L21/2236 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be biased by a power supply; and a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate.