公开(公告)号：JP2011154214A

公开(公告)日：2011-08-11

申请号：JP2010016019

申请日：2010-01-27

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： MIYATA HIROMU ,  NATSUME NORIHIRO ,  HASEGAWA KOICHI ,  YASUDA YOSHITOMO

IPC: G03F7/075 ,  C08F20/26 ,  G03F7/004 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a negative radiation-sensitive composition which has high resolution and allows fine holes to be formd and allows a cured pattern with a good elastic modulus and a low relative dielectric constant to be formed, and to provide a cured pattern obtained using the negative radiation-sensitive composition, and a method for forming the cured pattern. SOLUTION: The negative radiation-sensitive composition contains a polysiloxane, a radiation-sensitive acid generator, a polymer having a repeating unit represented by general formula (CI), and a solvent, wherein R 1 denotes H, methyl or trifluoromethyl; R 2 denotes a single bond, methylene, 2-5C alkylene, alkyleneoxy or alkylenecarbonyloxy; and X denotes a monovalent group having a lactone structure or a cyclic carbonate structure. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种具有高分辨率并允许形成细孔的负辐射敏感组合物，并且可以形成具有良好弹性模量和低相对介电常数的固化图案，并且提供 使用负辐射敏感性组合物获得的固化图案，以及形成固化图案的方法。 解决方案：负辐射敏感组合物含有聚硅氧烷，辐射敏感性酸产生剂，具有由通式（C1）表示的重复单元的聚合物和溶剂，其中R 1 表示H，甲基或三氟甲基; R 2表示单键，亚甲基，2-5C亚烷基，亚烷基氧基或亚烷基羰基; X表示具有内酯结构或环状碳酸酯结构的一价基团。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010117439A

公开(公告)日：2010-05-27

申请号：JP2008289191

申请日：2008-11-11

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： MIYATA HIROMU ,  NATSUME NORIHIRO ,  YASUDA YOSHITOMO

IPC: G03F7/075 ,  C09D1/00 ,  C09D7/12 ,  C09D183/02 ,  C09D183/05 ,  C09D183/06 ,  C09D183/08 ,  G03F7/004 ,  G03F7/039 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a positive radiation-sensitive composition or the like that has a good pattern shape, has no pattern deformation by hardening treatment, and forms a hardening pattern of low dielectric constant required with further high integration and further increase of layers of a semiconductor element etc. SOLUTION: This positive radiation-sensitive composition contains (A) polymer obtained by performing hydrolysis condensation of at least a kind of hydrolysis silane compound selected from hydrolysis silane compound expressed with formula (1) and hydrolysis silane compound expressed with formula (2), (B) a radiation sensitive base generator, and (C) a solvent, and its pH is in an acid side. In the formulae, R is hydrogen atom, fluorine atom, 1-5C alkyl group of a straight chain or branch shape, cyano group, cyano alkyl group, or alkyl carbonyl oxy group, each of R 1 and R 2 is monovalent organic group, and a shows an integer of 1-3. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供具有良好图案形状的正性辐射敏感性组合物等，通过硬化处理没有图案变形，并且形成进一步高集成度所需的低介电常数的硬化图案，并且进一步 半导体元件层的增加等。解决方案：该正性辐射敏感性组合物含有（A）通过进行至少一种选自由式（1）表示的水解硅烷化合物的水解硅烷化合物的水解缩合得到的聚合物， 和由式（2）表示的水解硅烷化合物，（B）辐射敏感碱产生剂，和（C）溶剂，其pH在酸侧。 式中，R为氢原子，氟原子，直链或支链状的1-5C烷基，氰基，氰基烷基或烷基羰基氧基，R 1， R 2 是一价有机基团，a表示1-3的整数。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2007279073A

公开(公告)日：2007-10-25

申请号：JP2006084481

申请日：2006-03-27

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NISHIMURA ISAO ,  EGAWA HIROMI ,  SUGIE NORIHIKO ,  NATSUME NORIHIRO ,  TAKAHASHI JUNICHI

IPC: G03F7/039 ,  C08G77/26 ,  G03F7/075 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition useful as a chemically amplified resist excelling particularly in depth of focus (DOF) and capability of substantially decreasing development defects, while maintaining excellent basic performance as a resist. SOLUTION: The radiation-sensitive resin composition comprises (A) a siloxane resin containing an acid-dissociable group and (B) a radiation-sensitive acid generator, wherein when a coating formed from the radiation-sensitive resin composition is exposed to radiation and heated, the contact angle (α) with water in an unexposed area and the contact angle (β) with water in an exposed area satisfy inequality formula of (α-β)>5°. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供可用作特别是焦点深度（DOF）的化学放大抗蚀剂的放射线敏感性树脂组合物和显着降低显影缺陷的能力，同时保持作为抗蚀剂的优异的基本性能。 解决方案：辐射敏感性树脂组合物包含（A）含有酸解离基团的硅氧烷树脂和（B）辐射敏感性酸产生剂，其中当将由该辐射敏感性树脂组合物形成的涂层暴露于 放射和加热时，暴露区域与未曝光区域的接触角（α）与水的接触角（β）满足（α-β）> 5°的不等式。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007182555A

公开(公告)日：2007-07-19

申请号：JP2006322806

申请日：2006-11-30

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NISHIMURA ISAO ,  SUGIE NORIHIKO ,  NATSUME NORIHIRO ,  TAKAHASHI JUNICHI

IPC: C08G77/12 ,  C08G77/26 ,  G03F7/039 ,  G03F7/075 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide polysiloxane keeping good properties based on siloxane and sufficient key properties of a resist as a chemical amplification resist, and excellent in line edge roughness, focal depth and the like. SOLUTION: The polysiloxane has a structural unit represented by the general formula (I) (wherein, R 2 is a univalent acid dissociation group), a siloxane unit directly bonded, on the silicon atom, with a hydrogen atom, and a siloxane unit bonded, on the silicon atom, with a 1-20C alkoxy, cyano or hydroxy through a 1-20C divalent hydrocarbon. And the radiation-sensitive resin composition is provided by containing the polysiloxane and a radiation-sensitive acid generating agent. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供基于硅氧烷保持良好性能的聚硅氧烷和作为化学增强抗蚀剂的抗蚀剂的足够的关键性能，并且线边缘粗糙度，焦深等优异。 解决方案：聚硅氧烷具有由通式（I）表示的结构单元（其中R 2 是一价酸解离基团），在硅原子上直接键合的硅氧烷单元， 与硅原子通过1-20C的二价烃与1-20C的烷氧基，氰基或羟基键接的硅氧烷单元。 并且通过含有聚硅氧烷和辐射敏感性的酸产生剂来提供辐射敏感性树脂组合物。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007031627A

公开(公告)日：2007-02-08

申请号：JP2005219949

申请日：2005-07-29

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SUGIE NORIHIKO ,  NISHIMURA ISAO ,  NATSUME NORIHIRO ,  TAKAHASHI JUNICHI

IPC: C08G77/28 ,  G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition useful for chemical amplification-type resists excellent in depth of focus (DOF) in particular, while maintaining enough basic performances as resist, and significantly reduced in development defects, and to provide a polysiloxane useful as a constituent of this resin composition. SOLUTION: The polysiloxane has structural units each represented by the formula: -[Si(R)O 2 ]- [wherein, R is a -R 1 NHSO 2 R 2 group, wherein R 1 and R 2 are each a (substituted) straight-chain, branched or cyclic bivalent hydrocarbon group (wherein R 2 is free from fluorine atom)] and, preferably, structural units each represented by the formula: -[Si(R 3 COOR 4 )O 2 ]- (wherein, R 3 is a cyclic bivalent hydrocarbon group; and R 4 is a monovalent acid-dissociable group). COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于化学放大型的抗辐射敏感性树脂组合物，特别是在保持足够的基础性能作为抗蚀剂的同时，显着降低了显影缺陷，并且 以提供可用作该树脂组合物的组分的聚硅氧烷。 解决方案：聚硅氧烷具有各自由下式表示的结构单元： - [Si（R）O 2] - [其中，R是-NH 2 其中R 1和R 2各自为（取代的）直链，支链的 或环状二价烃基（其中R 2 不含氟原子）]，优选结构单元各自由下式表示： - [Si（R 3） SP> 4 ）O 2] - （其中，R 3为环状二价烃基; R SP 4为 一价酸解离基团）。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2012098433A

公开(公告)日：2012-05-24

申请号：JP2010244996

申请日：2010-11-01

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： HARADA SAKI ,  YADA YUJI ,  NATSUME NORIHIRO ,  KIMURA TORU

IPC: G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a resist pattern having an excellent shape, and a scum margin, using a substrate having steps.SOLUTION: A radiation sensitive composition includes a polymer component comprising: at least one of a hydroxystyrene structure and a repeating unit which becomes a hydroxystyrene structure by action of an acid from a photoacid generator; and at least one kind selected from repeating units represented by the following general formulas.

Abstract translation: 要解决的问题：使用具有步骤的基板来提供具有优异形状和浮渣边缘的抗蚀剂图案。 解决方案：辐射敏感组合物包括聚合物组分，其包含：羟基苯乙烯结构和重复单元中的至少一种，其通过来自光致酸产生剂的酸的作用成为羟基苯乙烯结构; 和选自由以下通式表示的重复单元中的至少一种。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011048200A

公开(公告)日：2011-03-10

申请号：JP2009197358

申请日：2009-08-27

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： MIYATA HIROMU ,  NATSUME NORIHIRO ,  YASUDA YOSHITOMO

IPC: G03F7/038 ,  C08G77/04 ,  C08G77/50 ,  G03F7/004 ,  G03F7/075 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a negative type radiation-sensitive composition that forms an interlayer insulating film of low relative dielectric constant and forms a good pattern of a few standing waves even on a ground substrate of high reflexibility of a reflectance of 1.0% or higher, and to provide a curing pattern and a forming method of the pattern.
SOLUTION: This negative type radiation-sensitive composition includes polymer, a radiation-sensitive acid generator, an acid proliferating agent, and a solvent. The polymer is obtained by hydrolysis-condensing at least one kind of compound selected from a hydrolyzable silane compound expressed by general formula R
1
a Si(OR
2 )
4-a [where, R
1 is a hydrogen atom, fluorine atom, straight-chain or branch 1-5C alkyl group, cyano group, cyano alkyl group, or alkyl carbonyloxy group, R
2 is a monovalent organic group, and a is integer of 1-3], and a hydrolyzable silane compound expressed by general formula Si(OR
3 )
4 [where, R
3 is a monovalent organic group].
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种负型辐射敏感性组合物，其形成具有低相对介电常数的层间绝缘膜，并且甚至在基板上形成几个驻波的良好图案，反射率高反射率 1.0％以上，并且提供图案的固化图案和形成方法。 解决方案：该负型辐射敏感性组合物包括聚合物，辐射敏感性酸产生剂，酸增殖剂和溶剂。 聚合物通过水解缩合至少一种选自由通式R 1表示的可水解硅烷化合物的化合物获得，其中Si（OR 2）2或/ SP>） 4-a 其中，R SP 1是氢原子，氟原子，直链或支链1-5C烷基，氰基，氰基烷基 或烷基羰基氧基，R SP 2是一价有机基团，a是1-3的整数]和由通式Si表示的可水解的硅烷化合物（OR SP＆lt; SP＆gt; 3＆lt; SP >） 4 其中，R 3 是一价有机基团]。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010276880A

公开(公告)日：2010-12-09

申请号：JP2009129656

申请日：2009-05-28

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： MIYATA HIROMU ,  IKUI HAYATO ,  NATSUME NORIHIRO ,  YASUDA YOSHITOMO

IPC: G03F7/038 ,  C08F220/28 ,  G03F7/004 ,  G03F7/075 ,  G03F7/40 ,  H01L21/027 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide a negative-type radiation-sensitive composition that has a high resolution, has a wide depth of focus (DOF), provides a proper pattern shape, and forms a curing pattern of a low-relative dielectric constant, and to provide a curing pattern that uses the pattern and a forming method of the curing pattern. SOLUTION: The negative type radiation-sensitive composition contains polysiloxane (A), a radiation-sensitive acid generator (B), polymer (C) containing a structural unit (c1) expressed by general formula (1) and a solvent (D). COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供具有高分辨率，具有宽的焦深​​（DOF）的负型辐射敏感性组合物，提供适当的图案形状，并形成低相对的固化图案 介电常数，并提供使用图案的固化图案和固化图案的形成方法。 解决方案：负型辐射敏感性组合物含有聚硅氧烷（A），辐射敏感性酸产生剂（B），含有由通式（1）表示的结构单元（c1）和溶剂（ D）。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2009275155A

公开(公告)日：2009-11-26

申请号：JP2008128928

申请日：2008-05-15

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： KUSAKAI KAZUNORI ,  NATSUME NORIHIRO ,  SUGIE NORIHIKO

IPC: C08F220/38 ,  C08L33/16 ,  G03F7/11 ,  G03F7/20 ,  G03F7/38 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for an upper layer film reducing watermark defects, blob defects and the like. SOLUTION: The composition for an upper layer film contains a polymer (A), which has either of units represented by general formulas (1) and (2) and a specific unit except them, and a solvent. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于上层膜的组合物，减少水印缺陷，斑点缺陷等。 解决方案：用于上层膜的组合物含有聚合物（A），其具有由通式（1）和（2）表示的任何一个单元和除了它们之外的具体单元和溶剂。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2008242303A

公开(公告)日：2008-10-09

申请号：JP2007085726

申请日：2007-03-28

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NATSUME NORIHIRO ,  SUGIE NORIHIKO ,  TAKAHASHI JUNICHI

IPC: G03F7/11 ,  C08F12/22 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming an upper antireflection film capable of thoroughly reducing standing-wave effect and blob defects in lithography and having superior solubility in an alkali developer, and to provide a resist pattern forming method. SOLUTION: The composition for forming an upper antireflection film contains a polymer (A), soluble in an alkali developer and having an aromatic group, and at least one of a radiation-sensitive acid generator (B) and a compound (C) having sulfonic acid residue. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 解决问题的方案：提供一种用于形成能够彻底降低光刻中的驻波效应和斑点缺陷并且在碱性显影剂中具有优异溶解性的上部抗反射膜的组合物，并提供抗蚀剂图案形成方法。 解决方案：用于形成上部抗反射膜的组合物含有可溶于碱性显影剂并具有芳香族基团的聚合物（A），以及辐射敏感性酸产生剂（B）和化合物（C）中的至少一种 ）具有磺酸残基。 版权所有（C）2009，JPO＆INPIT