公开(公告)号：US10185184B2

公开(公告)日：2019-01-22

申请号：US15660254

申请日：2017-07-26

Applicant: Japan Display Inc.

Inventor： Yasushi Tomioka ,  Noboru Kunimatsu ,  Yosuke Hyodo ,  Toshiki Kaneko ,  Yuko Matsumoto

IPC: G02F1/1368 ,  G02F1/1339 ,  G02F1/1362

Abstract: A liquid crystal display device includes: a TFT substrate having gate lines and data lines arranged thereon, the gate lines extending in a first direction and arranged in a second direction, the data lines extending in the second direction and arranged in the first direction; a counter substrate having a black matrix and a color filter; and liquid crystals put between the TFT substrate and the counter substrate. Columnar spacers are fainted on the counter substrate. Pedestals are formed on portions of the TFT substrate, the portions corresponding to the columnar spacers. A convex portion and a concave portion are present at the top end of the columnar spacer. The pedestal is formed corresponding to the concave portion. The concave portion is opened at the ends thereof and connected to the lateral side of the columnar spacer.

公开(公告)号：US09927644B2

公开(公告)日：2018-03-27

申请号：US15413795

申请日：2017-01-24

Applicant: Japan Display Inc.

Inventor： Toshiki Kaneko ,  Takashi Nakamura ,  Masahiro Tada ,  Yukio Tanaka ,  Hiroyuki Kimura ,  Osamu Itou

IPC: G02F1/1333 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/36

CPC classification number: G02F1/133345 ,  G02F1/134336 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/1362 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133397 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2201/40 ,  G02F2202/42 ,  G09G3/3648 ,  G09G2300/0465 ,  G09G2310/08 ,  G09G2320/0247 ,  G09G2330/023

Abstract: There is provided a high-definition liquid crystal display device that can prevent flicker due to a reduction in the pixel potential in a low-frequency drive of about 10 Hz to reduce power consumption. The pixel has a TFT formed of Poly-Si as a switching element. In the pixel, a capacitance insulating film is formed on a planar first electrode on which a comb-shaped second electrode is fanned. When the film thickness of the insulating film is d and the dielectric constant at 10 Hz frequency is ∈, it is given that ∈d≥5×10−6 m at 10 Hz frequency. The capacitance insulating film does not have a hysteresis characteristic. The refractive index of the capacitance insulating film with respect to a light of a wavelength of 632.8 nm is 1.7 to 2.0.

公开(公告)号：US09766489B2

公开(公告)日：2017-09-19

申请号：US15002453

申请日：2016-01-21

Applicant: Japan Display Inc. ,  Panasonic Liquid Crystal Display Co., Ltd.

Inventor： Hideo Tanabe ,  Masaru Takabatake ,  Toshiki Kaneko ,  Atsushi Hasegawa ,  Hiroko Sehata

IPC: G02F1/1333 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1335 ,  G02F1/1368 ,  G02F1/1343

CPC classification number: G02F1/133345 ,  G02F1/133305 ,  G02F1/133504 ,  G02F1/133555 ,  G02F1/134363 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/78675

Abstract: A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

公开(公告)号：US09158160B2

公开(公告)日：2015-10-13

申请号：US14485711

申请日：2014-09-13

Applicant: Japan Display Inc.

Inventor： Noboru Kunimatsu ,  Masaki Matsumori ,  Hidehiro Sonoda ,  Yasushi Tomioka ,  Toshiki Kaneko

IPC: G02F1/1337 ,  G02F1/1339 ,  G02F1/1333

CPC classification number: G02F1/1337 ,  G02F1/1333 ,  G02F1/133345 ,  G02F1/133723 ,  G02F1/13378 ,  G02F1/133788 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/136286 ,  G02F1/1368

Abstract: The present invention prevents the shaving of an alignment film caused by a columnar spacer in a liquid crystal display device of an IPS method using photo-alignment. A plinth higher than a pixel electrode is formed at a part where a columnar spacer formed over a counter substrate touches a TFT substrate. When an alignment film of a double-layered structure is applied over the pixel electrode and the plinth, the thickness of the alignment film over the plinth reduces by a leveling effect. When photo-alignment is applied in the state, a photodegraded upper alignment film over the plinth disappears and a lower alignment film having a high mechanical strength remains. As a result, it is possible to prevent the shaving of the alignment film.

Abstract translation: 本发明防止了使用光取向的IPS方法的液晶显示装置中的柱状间隔物引起的取向膜的刮削。 在对置基板上形成的柱状间隔件与TFT基板接触的部分，形成比像素电极高的底座。 当在像素电极和底座上施加双层结构的取向膜时，底座上的取向膜的厚度减小了平整效应。 当在该状态下进行光对准时，在底座上的光降解的上取向膜消失，并且残留有机械强度较高的下取向膜。 结果，可以防止取向膜的刮削。

公开(公告)号：US12068399B2

公开(公告)日：2024-08-20

申请号：US17511633

申请日：2021-10-27

Applicant: Japan Display Inc.

Inventor： Akihiro Hanada ,  Takuo Kaitoh ,  Ryo Onodera ,  Takashi Okada ,  Tomoyuki Ito ,  Toshiki Kaneko

IPC: H01L29/66 ,  H01L21/385 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/385 ,  H01L27/1225 ,  H01L29/7869

Abstract: According to one embodiment, a method for manufacturing a semiconductor device, includes forming a first insulating film which covers a gate electrode, forming an island-shaped oxide semiconductor in contact with the first insulating film, forming a second insulating film which covers the oxide semiconductor, forming a source electrode in contact with the oxide semiconductor, forming a drain electrode in contact with the oxide semiconductor, forming a third insulating film which covers the source electrode and the drain electrode and forming a channel region between the source electrode and the drain electrode by supplying oxygen from the third insulating film to the oxide semiconductor via the second insulating film.

公开(公告)号：US11599001B2

公开(公告)日：2023-03-07

申请号：US17126475

申请日：2020-12-18

Applicant: Japan Display Inc.

Inventor： Akio Takimoto ,  Toshiki Kaneko ,  Takuo Kaitoh ,  Kazuhiro Nishiyama ,  Hiroyuki Kimura

IPC: G09G3/36 ,  G02F1/137 ,  F21V8/00 ,  G02F1/1335 ,  H04N5/225

Abstract: According to one embodiment, an electronic apparatus includes a camera, a first polarizer, a second polarizer, a liquid crystal panel, and a controller controlling the liquid crystal panel. The liquid crystal panel includes a first region and a second region. The controller controls a first opening mode of transmitting light through the first region and the second region, and a second opening mode of making a quantity of light transmitted through the first region smaller than a quantity of light transmitted through the second region.

公开(公告)号：US11594641B2

公开(公告)日：2023-02-28

申请号：US17111810

申请日：2020-12-04

Applicant: Japan Display Inc.

Inventor： Masashi Tsubuku ,  Michiaki Sakamoto ,  Takashi Okada ,  Toshiki Kaneko ,  Tatsuya Toda

IPC: H01L29/00 ,  H01L29/786 ,  H01L29/417

Abstract: A semiconductor device includes a gate electrode on a substrate, a gate insulating film on the gate electrode, an oxide semiconductor film via the gate insulating film on the gate electrode, a source electrode and a drain electrode on the oxide semiconductor film, a protective film provided on the source electrode and the drain electrode; and a conductive layer provided on the protective film and overlapped on the oxide semiconductor layer. The protective film includes a first silicon oxide film and a first silicon nitride film. The first oxide film is in contact with the oxide semiconductor layer. The gate insulating film includes a second silicon nitride film and a second silicon oxide film. The second silicon oxide film is in contact with the oxide semiconductor layer. The oxide semiconductor layer has a first region located between the source electrode and the drain electrode in a plan view.

公开(公告)号：US11536999B2

公开(公告)日：2022-12-27

申请号：US17187945

申请日：2021-03-01

Applicant: Japan Display Inc. ,  Panasonic Liquid Crystal Display Co., Ltd.

Inventor： Hideo Tanabe ,  Masaru Takabatake ,  Toshiki Kaneko ,  Atsushi Hasegawa ,  Hiroko Sehata

IPC: G02F1/1333 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1335 ,  G02F1/1343

Abstract: A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

公开(公告)号：US11215862B2

公开(公告)日：2022-01-04

申请号：US17153336

申请日：2021-01-20

Applicant: Japan Display Inc.

Inventor： Akio Takimoto ,  Toshiki Kaneko ,  Takuo Kaitoh ,  Kazuhiro Nishiyama ,  Hiroyuki Kimura

IPC: G02F1/1333 ,  G02F1/29 ,  F21V8/00 ,  G02F1/1335 ,  H04N5/225 ,  G02F1/1343

Abstract: According to one embodiment, an electronic equipment includes a liquid crystal panel including a display portion, a polarizer superposed on the display portion, and a detection element superposed on the liquid crystal panel and the polarizer to detect infrared rays through the liquid crystal panel and the polarizer.

公开(公告)号：US10564459B2

公开(公告)日：2020-02-18

申请号：US16161988

申请日：2018-10-16

Applicant: Japan Display Inc. ,  Panasonic Liquid Crystal Display Co., Ltd.

Inventor： Hideo Tanabe ,  Masaru Takabatake ,  Toshiki Kaneko ,  Atsushi Hasegawa ,  Hiroko Sehata

IPC: G02F1/1333 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1335 ,  G02F1/1343

Abstract: A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.