公开(公告)号：EP2619778A4

公开(公告)日：2015-07-15

申请号：EP11827419

申请日：2011-09-21

Applicant: KEMET ELECTRONICS CORP

Inventor： QIU YONGJIAN ,  POLTORAK JEFFREY ,  SUMMERY BRANDON

IPC: H01G9/048 ,  H01G9/012 ,  H01G9/15

CPC classification number: H01G9/0029 ,  B05D1/18 ,  B29C59/16 ,  C23C18/1216 ,  H01G9/028 ,  H01G9/0425 ,  H01G9/048 ,  H01G9/15 ,  Y10T29/41 ,  Y10T29/417 ,  Y10T29/43

Abstract: Provided is a method for forming a capacitor. The method includes: providing an anode with a dielectric thereon and a conductive node in electrical contact with the anode; applying a conductive seed layer on the dielectric; forming a conductive bridge between the conductive seed layer and the conductive node; applying voltage to the anode; electrochemically polymerizing a monomer thereby forming an electrically conducting polymer of monomer on the conductive seed layer; and disrupting the conductive bridge between the conductive seed layer and the conductive node.

Abstract translation: 提供一种形成电容器的方法。 该方法包括：在其上提供电介质和与阳极电接触的导电节点; 在电介质上施加导电种子层; 在导电种子层和导电节点之间形成导电桥; 向阳极施加电压; 由此在导电种子层上形成单体的导电聚合物; 并破坏导电种子层和导电节点之间的导电桥。