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    DEVICE METROLOGY TARGETS AND METHODS
    11.
    发明申请
    DEVICE METROLOGY TARGETS AND METHODS 审中-公开
    设备计量目标和方法

    公开(公告)号：WO2016123552A1

    公开(公告)日：2016-08-04

    申请号：PCT/US2016/015782

    申请日：2016-01-29

    Applicant: KLA-TENCOR CORPORATION

    Inventor： ERAN, Amit ,  KANDEL, Daniel ,  ALUMOT, Dror

    IPC: H01L21/66

    CPC classification number: G03F7/70633 ,  H01L22/12 ,  H01L27/0207 ,  H01L27/092

    Abstract: Metrology methods and targets are provided, that expand metrological procedures beyond current technologies into multi-layered targets, quasi-periodic targets and device-like targets, without having to introduce offsets along the critical direction of the device design. Several models are disclosed for deriving metrology data such as overlays from multi-layered target and corresponding configurations of targets are provided to enable such measurements. Quasi-periodic targets which are based on device patterns are shown to improve the similarity between target and device designs, and the filling of the surroundings of targets and target elements with patterns which are based on device patterns improve process compatibility. Offsets are introduced only in non-critical direction and/or sensitivity is calibrated to enable, together with the solutions for multi-layer measurements and quasi-periodic target measurements, direct device optical metrology measurements.

    Abstract translation: 提供了计量方法和目标，将计量过程超越现有技术扩展到多层目标，准周期目标和设备样目标，而不必沿着设备设计的关键方向引入偏移量。 公开了用于导出诸如来自多层目标的覆盖层的度量数据的几个模型，并且提供了相应的目标配置以实现这种测量。 显示基于设备模式的准周期性目标，以改善目标和设备设计之间的相似性，并且使用基于设备模式的模式来填充目标和目标元素的环境，从而提高了流程兼容性。 仅在非关键方向引入偏移，并且/或灵敏度被校准，以便与多层测量和准周期性目标测量的解决方案一起实现直接设备光学测量测量。

    TARGET ELEMENT TYPES FOR PROCESS PARAMETER METROLOGY
    12.
    发明申请
    TARGET ELEMENT TYPES FOR PROCESS PARAMETER METROLOGY 审中-公开
    目标元素类型用于过程参数公制

    公开(公告)号：WO2015080858A1

    公开(公告)日：2015-06-04

    申请号：PCT/US2014/064851

    申请日：2014-11-10

    Applicant: KLA-TENCOR CORPORATION

    Inventor： LEVINSKI, Vladimir ,  YOEL, Feler ,  KANDEL, Daniel

    IPC: H01L21/66 ,  G03F1/38 ,  G03F7/20 ,  G01B11/00 ,  G01B11/14

    CPC classification number: G03F1/42 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683 ,  G06F17/5072 ,  H01L22/30

    Abstract: Metrology targets, target design methods and metrology methods are provided. Metrology targets comprise target elements belonging to two or more target element types. Each target element type comprises unresolved features which offset specified production parameters to a specified extent and thus provide sensitivity monitoring and optimization tools for process parameters such as focus and dose.

    Abstract translation: 提供了计量目标，目标设计方法和计量方法。 计量目标包括属于两个或更多目标元素类型的目标元素。 每个目标元素类型包括将指定的生产参数偏移到指定范围的未解决的特征，从而为诸如焦点和剂量的过程参数提供灵敏度监控和优化工具。

    METHOD AND SYSTEM FOR PROVIDING A TARGET DESIGN DISPLAYING HIGH SENSITIVITY TO SCANNER FOCUS CHANGE
    14.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING A TARGET DESIGN DISPLAYING HIGH SENSITIVITY TO SCANNER FOCUS CHANGE 审中-公开
    提供目标设计的方法和系统，显示对扫描仪聚焦变化的高灵敏度

    公开(公告)号：WO2014074868A1

    公开(公告)日：2014-05-15

    申请号：PCT/US2013/069224

    申请日：2013-11-08

    Applicant: KLA-TENCOR CORPORATION

    Inventor： LEVINSKI, Vladimir ,  FELER, Yoel ,  KANDEL, Daniel

    IPC: H01L21/027

    CPC classification number: G03F1/38 ,  G01B11/14 ,  G03F1/70 ,  G03F7/70641 ,  G03F7/70683

    Abstract: A segmented mask includes a set of cell structures, wherein each cell structure includes a set of features having an unresolvable segmentation pitch along a first direction, wherein the unresolvable segmentation pitch along the first direction is smaller than the illumination of the lithography printing tool, wherein the plurality of cell structures have a pitch along a second direction perpendicular to the first direction, wherein the unresolvable segmentation pitch is suitable for generating a printed pattern for shifting the best focus position of the lithography tool by a selected amount to achieve a selected level of focus sensitivity.

    Abstract translation: 分割的掩模包括一组单元结构，其中每个单元结构包括沿着第一方向具有不可解析的分割间距的一组特征，其中沿着第一方向的不可解析的分割间距小于光刻印刷工具的照明，其中 所述多个单元结构具有沿着垂直于所述第一方向的第二方向的间距，其中所述不可分辨的分割间距适于产生用于将所述光刻工具的最佳聚焦位置移动所选量的印刷图案，以实现所选择的等级 聚焦灵敏度。

    NEAR FIELD METROLOGY
    15.
    发明申请
    NEAR FIELD METROLOGY 审中-公开
    近场计量学

    公开(公告)号：WO2014004555A1

    公开(公告)日：2014-01-03

    申请号：PCT/US2013/047682

    申请日：2013-06-25

    Applicant: KLA-TENCOR CORPORATION

    Inventor： SAPIENS, Noam ,  SELIGSON, Joel ,  LEVINSKI, Vladimir ,  KANDEL, Daniel ,  FELER, Yoel ,  BRINGOLTZ, Barak ,  MANASSEN, Amnon ,  BENISTY, Eliav

    IPC: H01L21/66

    CPC classification number: G01N21/4788 ,  G01N2201/06113 ,  G02B27/56 ,  G02B27/58

    Abstract: Metrology systems and methods are provided herein, which comprise an optical element that is positioned between an objective lens of the system and a target. The optical element is arranged to enhance evanescent modes of radiation reflected by the target. Various configurations are disclosed, the optical element may comprise a solid immersion lens, a combination of Moiré-elements and solid immersion optics, dielectric-metal-dielectric stacks of different designs, and resonating elements to amplify the evanescent modes of illuminating radiation. The metrology systems and methods are configurable to various metrology types, including imaging and scatterometry methods.

    Abstract translation: 本文提供的计量系统和方法包括位于系统的物镜和目标之间的光学元件。 光学元件布置成增强目标反射的辐射消散模式。 公开了各种配置，光学元件可以包括固体浸没透镜，莫尔元件和固体浸没光学元件的组合，不同设计的介电金属 - 电介质堆叠以及用于放大照明辐射的渐逝模式的谐振元件。 计量系统和方法可配置为各种计量类型，包括成像和散射方法。

    STRUCTURED ILLUMINATION FOR CONTRAST ENHANCEMENT IN OVERLAY METROLOGY
    16.
    发明申请
    STRUCTURED ILLUMINATION FOR CONTRAST ENHANCEMENT IN OVERLAY METROLOGY 审中-公开
    结构化照明在超大规模的对比度增强

    公开(公告)号：WO2012109348A1

    公开(公告)日：2012-08-16

    申请号：PCT/US2012/024320

    申请日：2012-02-08

    Applicant: KLA-TENCOR CORPORATION ,  SELIGSON, Joel, L. ,  SAPIENS, Noam ,  KANDEL, Daniel

    Inventor： SELIGSON, Joel, L. ,  SAPIENS, Noam ,  KANDEL, Daniel

    IPC: G03F9/00

    CPC classification number: G01N21/47 ,  G01B11/02 ,  G01N21/00 ,  G03F7/70633

    Abstract: Contrast enhancement in a metrology tool may include generating a beam of illumination, directing a portion of the generated beam onto a surface of a spatial light modulator (SLM), directing at least a portion of the generated beam incident on the surface of the SLM through an aperture of an aperture stop and onto one or more target structures of one or more samples, and generating a selected illumination pupil function of the illumination transmitted through the aperture utilizing the SLM in order to establish a contrast level of one or more field images of the one or more target structures above a selected contrast threshold, and performing one or more metrology measurements on the one or more target structures utilizing the selected illumination pupil function.

    Abstract translation: 计量工具中的对比度增强可以包括产生照射光束，将所产生的光束的一部分引导到空间光调制器（SLM）的表面上，引导入射到SLM的表面上的所产生的光束的至少一部分通过 孔径的孔径停止并且连接到一个或多个样本的一个或多个目标结构上，并且通过使用SLM生成通过孔径透射的照明的选择的照明光瞳函数，以便建立一个或多个场图像的对比度 所述一个或多个目标结构在所选择的对比度阈值之上，以及利用所选择的照明光瞳功能对所述一个或多个目标结构执行一个或多个度量测量。

    SCATTEROMETRY METROLOGY TARGET DESIGN OPTIMIZATION
    17.
    发明申请
    SCATTEROMETRY METROLOGY TARGET DESIGN OPTIMIZATION 审中-公开
    SCATTERMETRY计量学目标设计优化

    公开(公告)号：WO2010080732A2

    公开(公告)日：2010-07-15

    申请号：PCT/US2010/020046

    申请日：2010-01-04

    Applicant: KLA-TENCOR CORPORATION ,  ADEL, Michael E. ,  MANASSEN, Amnon ,  KANDEL, Daniel

    Inventor： ADEL, Michael E. ,  MANASSEN, Amnon ,  KANDEL, Daniel

    IPC: H01L21/66

    CPC classification number: G03F7/70683 ,  G03F7/705 ,  G03F7/70633 ,  H01L22/12

    Abstract: A metrology target design may be optimized using inputs including metrology target design information, substrate information, process information, and metrology system information. Acquisition of a metrology signal with a metrology system may be modeled using the inputs to generate one or more optical characteristics of the metrology target. A metrology algorithm may be applied to the characteristics to determine a predicted accuracy and precision of measurements of the metrology target made by the metrology system. Part of the information relating to the metrology target design may be modified and the signal modeling and metrology algorithm may be repeated to optimize the accuracy and precision of the one or more measurements. The metrology target design may be displayed or stored after the accuracy and precision are optimized.

    Abstract translation: 可以使用包括计量目标设计信息，底物信息，过程信息和计量系统信息的输入来优化计量目标设计。 采用计量系统获取计量信号可以使用输入来建模，以产生计量目标的一个或多个光学特性。 可以将计量学算法应用于特征以确定由计量系统制定的度量目标的预测精度和测量精度。 可以修改与度量目标设计有关的部分信息，并且可以重复信号建模和计量学算法以优化一个或多个测量的精度和精度。 可以在精度和精度优化后显示或存储度量目标设计。

    FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY
    19.
    发明申请
    FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY 审中-公开
    使用散射测量方法的重点测量

    公开(公告)号：WO2015153497A1

    公开(公告)日：2015-10-08

    申请号：PCT/US2015/023405

    申请日：2015-03-30

    Applicant: KLA-TENCOR CORPORATION

    Inventor： EL KODADI, Mohammed ,  AMIR, Nuriel ,  VOLKOVICH, Roie ,  LEVINSKI, Vladimir ,  FELER, Yoel ,  KANDEL, Daniel ,  GUTMAN, Nadav ,  PANDEV, Stilian ,  SANKO, Dzmitry

    IPC: G02B15/14 ,  H04N7/18

    CPC classification number: G06F17/5081 ,  G01N21/4785 ,  G03F7/70641 ,  G03F7/70683 ,  G06F17/5072

    Abstract: Target designs and methods are provided, which relate to periodic structures having elements recurring with a first pitch in a first direction. The elements are periodic with a second pitch along a second direction that is perpendicular to the first direction and are characterized in the second direction by alternating, focus-sensitive and focus-insensitive patterns with the second pitch. In the produced targets, the first pitch may be about the device pitch and the second pitch may be several times larger. The first, focus-insensitive pattern may be produced to yield a first critical dimension and the second, focus-sensitive pattern may be produced to yield a second critical dimension that may be equal to the first critical dimension only when specified focus requirements are satisfied, or provide scatterometry measurements of zeroth as well as first diffraction orders, based on the longer pitch along the perpendicular direction.

    Abstract translation: 提供了目标设计和方法，其涉及具有在第一方向上以第一间距重复的元件的周期性结构。 这些元件沿着与第一方向垂直的第二方向具有第二间距周期性，并且通过具有第二间距的交替的，聚焦敏感的和不对焦的图案在第二方向上表征。 在所产生的目标中，第一节距可以是关于装置间距，而第二节距可以是数倍。 可以产生第一个不对焦模式以产生第一临界尺寸，并且可以产生第二焦点敏感图案以产生仅当满足指定的焦点要求时可以等于第一临界尺寸的第二临界尺寸， 或者基于沿着垂直方向的较长的间距来提供零和第一衍射级的散射测量。

    ON-DEVICE METROLOGY
    20.
    发明申请
    ON-DEVICE METROLOGY 审中-公开
    设备计量学

    公开(公告)号：WO2014172648A1

    公开(公告)日：2014-10-23

    申请号：PCT/US2014/034668

    申请日：2014-04-18

    Applicant: KLA-TENCOR CORPORATION

    Inventor： SHCHEGROV, Andrei ,  MADSEN, Jon ,  PANDEV, Stilian ,  LEVY, Ady ,  KANDEL, Daniel ,  ADEL, Michael E ,  TADMOR, Ori

    IPC: H01L21/66

    CPC classification number: H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Methods and systems for performing semiconductor metrology directly on device structures are presented. A measurement model is created based on measured training data collected from at least one device structure. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measurement data collected from device structures of other wafers. In some examples, measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement may be derived from measurements performed by a combination of multiple, different measurement techniques.

    Abstract translation: 提出了直接在器件结构上执行半导体测量的方法和系统。 基于从至少一个设备结构收集的测量训练数据创建测量模型。 训练后的测量模型用于直接从其他晶圆的器件结构收集的测量数据中计算过程参数值，结构参数值或两者。 在一些示例中，收集来自多个目标的测量数据用于模型构建，训练和测量。 在一些示例中，使用与多个目标相关联的测量数据消除或显着降低测量结果中下层的影响，并且能够进行更精确的测量。 用于模型建立，训练和测量收集的测量数据可以通过多种不同测量技术的组合进行的测量得出。

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