DATA COMPRESSION USING MEMRISTIVE CROSSBAR
    12.
    发明申请

    公开(公告)号:US20190132602A1

    公开(公告)日:2019-05-02

    申请号:US16174060

    申请日:2018-10-29

    Abstract: Data compression using a memristive crossbar is enabled. Conductances of memristors may be set such that the memristors of the crossbar act as coefficients of a wavelet transformation coefficient matrix with respect to voltage signals applied to input rows of the crossbar. The memristors may act as coefficients of the transpose of the wavelet transformation coefficient matrix when voltage signals are applied to input columns of the crossbar. Hence, the memristive crossbar may be used to implement a two dimensional (2D) discrete wavelet transform (DWT) on two dimensional data (e.g., image data) encoded in the voltage signals. The resulting currents in the columns of the memristive crossbar may be integrated and converted to voltage signals that are fed back into columns of the memristive crossbar such that the rows of the memristive crossbar output electronic signals that correspond to the image data compressed in accordance with Haar 2D-DWT image compression.

    Glucose sensing device
    15.
    发明授权

    公开(公告)号:US12247942B2

    公开(公告)日:2025-03-11

    申请号:US17058485

    申请日:2019-06-03

    Abstract: A glucose sensor includes an insulating metal oxide layer and at least one pair of metallic electrodes arranged on the insulating metal oxide layer and separated by a gap containing the metal oxide layer. In operation, a probe including a voltage supply and current sensor can provide a voltage difference across the first and second metallic electrodes while a sample is present across the gap between the electrodes. A measured current between the first and second metallic electrodes when the voltage difference is provided can be correlated to a glucose level of the sample.

    Memristor based sensor for radiation detection

    公开(公告)号:US11480695B2

    公开(公告)日:2022-10-25

    申请号:US17377219

    申请日:2021-07-15

    Abstract: Devices, systems, and methods of using one or more memristors as a radiation sensor are enabled. A memristor can be attractive as a sensor due to its passive low power characteristics. Medical and environment monitoring are contemplated use cases. Sensing radiation as part of a security system (at an airport for example) and screening food for radiation exposure are also possible uses. The memristor as a radiation sensor may possibly provide an inexpensive and easy alternative to personal thermoluminescent dosimeters (TLD). Memristor devices with high current and low power operation may be attached with wearable plastic substrates. An example device includes two metal strips with a 50 μm thick layer of TiO2 memristor material. The device may be made large relative to traditional memristors which are nanometers in scale but its increased thickness can significantly increase the probability of radiation interaction with the memristor material.

    Memristor based sensor for radiation detection

    公开(公告)号:US11105937B2

    公开(公告)日:2021-08-31

    申请号:US16067534

    申请日:2016-12-30

    Abstract: Devices, systems, and methods of using one or more memristors as a radiation sensor are enabled. A memristor can be attractive as a sensor due to its passive low power characteristics. Medical and environment monitoring are contemplated use cases. Sensing radiation as part of a security system (at an airport for example) and screening food for radiation exposure are also possible uses. The memristor as a radiation sensor may possibly provide an inexpensive and easy alternative to personal thermoluminescent dosimeters (TLD). Memristor devices with high current and low power operation may be attached with wearable plastic substrates. An example device includes two metal strips with a 50 μm thick layer of TiO2 memristor material. The device may be made large relative to traditional memristors which are nanometers in scale but its increased thickness can significantly increase the probability of radiation interaction with the memristor material.

    Data compression using memristive crossbar

    公开(公告)号:US10735753B2

    公开(公告)日:2020-08-04

    申请号:US16174060

    申请日:2018-10-29

    Abstract: Data compression using a memristive crossbar is enabled. Conductances of memristors may be set such that the memristors of the crossbar act as coefficients of a wavelet transformation coefficient matrix with respect to voltage signals applied to input rows of the crossbar. The memristors may act as coefficients of the transpose of the wavelet transformation coefficient matrix when voltage signals are applied to input columns of the crossbar. Hence, the memristive crossbar may be used to implement a two dimensional (2D) discrete wavelet transform (DWT) on two dimensional data (e.g., image data) encoded in the voltage signals. The resulting currents in the columns of the memristive crossbar may be integrated and converted to voltage signals that are fed back into columns of the memristive crossbar such that the rows of the memristive crossbar output electronic signals that correspond to the image data compressed in accordance with Haar 2D-DWT image compression.

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