公开(公告)号：US20160308083A1

公开(公告)日：2016-10-20

申请号：US15189384

申请日：2016-06-22

Applicant: LG ELECTRONICS INC.

Inventor： Junyong AHN ,  Gyeayoung Kwag ,  Juhwa Cheong

IPC: H01L31/068 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/0684 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022458 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A silicon solar cell and a method of manufacturing the same are disclosed. The silicon solar cell includes a silicon semiconductor substrate doped with first conductive impurities, an emitter layer doped with second conductive impurities having polarities opposite polarities of the first conductive impurities on the substrate, an anti-reflective layer on an entire surface of the substrate, an upper electrode that passes through the anti-reflective layer and is connected to the emitter layer, and a lower electrode connected to a lower portion of the substrate. The emitter layer includes a first emitter layer heavily doped with the second conductive impurities and a second emitter layer lightly doped with the second conductive impurities. A surface resistance of the second emitter layer is 100 Ohm/sq to 120 Ohm/sq.

Abstract translation: 公开了一种硅太阳能电池及其制造方法。 硅太阳能电池包括掺杂有第一导电杂质的硅半导体衬底，掺杂有具有与衬底上的第一导电杂质的极性相反的极性的第二导电杂质的发射极层，在衬底的整个表面上的抗反射层， 上电极穿过抗反射层并连接到发射极层，下电极连接到衬底的下部。 发射极层包括重掺杂有第二导电杂质的第一发射极层和轻掺杂有第二导电杂质的第二发射极层。 第二发射极层的表面电阻为100欧姆/平方至120欧姆/平方。

公开(公告)号：US11211504B2

公开(公告)日：2021-12-28

申请号：US15889950

申请日：2018-02-06

Applicant: LG ELECTRONICS INC.

Inventor： Haejong Cho ,  Donghae Oh ,  Juhwa Cheong ,  Junyong Ahn

IPC: H01L31/0224 ,  H01B1/16 ,  C03C8/18 ,  C03C4/14 ,  C03C8/10 ,  H01L31/0216 ,  H01L31/0368 ,  H01L31/068 ,  H01L31/0236 ,  H01L31/18

Abstract: A solar cell is disclosed. The solar cell includes a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.

公开(公告)号：US10903375B2

公开(公告)日：2021-01-26

申请号：US16290233

申请日：2019-03-01

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa Cheong ,  Yiyin Yu ,  Youngsung Yang ,  Yongduk Jin ,  Manhyo Ha ,  Seongeun Lee

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/02

Abstract: A solar cell can include a front passivation region including a plurality of layers formed of different materials from each other and including a first aluminum oxide layer and a first silicon nitride layer, and a back passivation region including a plurality of layers formed of different materials from each other and including a second aluminum oxide layer and a second silicon nitride layer, wherein a thickness of a first silicon nitride layer is greater than a thickness of the first aluminum oxide layer, and a thickness of a second silicon nitride layer is greater than a thickness of the second aluminum oxide layer.

公开(公告)号：US09343599B2

公开(公告)日：2016-05-17

申请号：US14146501

申请日：2014-01-02

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa Cheong ,  Hyunjung Park ,  Junyong Ahn ,  Seongeun Lee ,  Jiweon Jeong

IPC: H01L31/00 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/02363 ,  H01L31/02168 ,  H01L31/18 ,  Y02E10/50 ,  Y02E10/52

Abstract: A method of manufacturing a solar cell includes forming jagged portions non-uniformly on a surface of a substrate, forming a first type semiconductor and a second type semiconductor in the substrate, forming a first electrode to contact the first type semiconductor, and forming a second electrode to contact the second type semiconductor. An etchant used in a wet etching process in manufacturing the solar cell includes about 0.5 wt % to 10 wt % of HF, about 30 wt % to 60 wt % of HNO3, and up to about 30 wt % of acetic acid based on total weight of the etchant.

Abstract translation: 太阳能电池的制造方法包括在基板的表面上不均匀地形成锯齿状的部分，在基板上形成第一型半导体和第二型半导体，形成与第一型半导体接触的第一电极，形成第二 电极接触第二类型半导体。 在制造太阳能电池的湿式蚀刻工艺中使用的蚀刻剂包括约0.5重量％至10重量％的HF，约30重量％至60重量％的HNO 3和至多约30重量％的基于总重量的乙酸 的蚀刻剂。

公开(公告)号：US09166096B2

公开(公告)日：2015-10-20

申请号：US13840618

申请日：2013-03-15

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa Cheong ,  Yongduk Jin ,  Youngsung Yang ,  Manhyo Ha

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0224

CPC classification number: H01L31/1864 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for manufacturing a dopant layer of a solar cell according to an embodiment of the invention includes: ion-implanting a dopant to a substrate; and heat-treating for an activation of the dopant. In the heat-treating for the activation, the substrate is heat-treated at a first temperature after an anti-out-diffusion film is formed at a temperature lower than the first temperature under a first gas atmosphere.

Abstract translation: 根据本发明实施例的用于制造太阳能电池的掺杂剂层的方法包括：将掺杂剂离子注入基板; 和用于激活掺杂剂的热处理。 在激活的热处理中，在第一气体气氛下，在比第一温度低的温度下形成防扩散膜之后，在第一温度下对基板进行热处理。

公开(公告)号：US11133426B2

公开(公告)日：2021-09-28

申请号：US16457129

申请日：2019-06-28

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin Ha ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn ,  Hyungwook Choi ,  Wonjae Chang ,  Jaesung Kim

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

Abstract: A method for manufacturing a solar cell can include forming a tunneling layer on first and second surfaces of a semiconductor substrate, the tunneling layer including a dielectric material; forming a polycrystalline silicon layer on the tunnel layer at the first surface and on the second surface of the semiconductor substrate; removing portions of the tunnel layer and the polycrystalline silicon layer formed at the first surface of the semiconductor substrate; forming a doping region at the first surface of the semiconductor substrate by diffusing a dopant; forming a passivation layer on the polycrystalline silicon layer at the second surface of the semiconductor substrate; and forming a second electrode connected to the polycrystalline silicon layer by penetrating through the passivation layer.

公开(公告)号：US10256353B2

公开(公告)日：2019-04-09

申请号：US15334611

申请日：2016-10-26

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa Cheong ,  Yiyin Yu ,  Youngsung Yang ,  Yongduk Jin ,  Manhyo Ha ,  Seongeun Lee

IPC: H01L31/02 ,  H01L31/0216 ,  H01L31/0224

Abstract: A solar cell can include a substrate of a first conductive type; an emitter region which is positioned at a front surface of the substrate and has a second conductive type different from the first conductive type; a back surface field region which is positioned at a back surface opposite the front surface of the substrate; a front passivation region including a plurality of layers which are sequentially positioned on the emitter region; a back passivation region including a plurality of layers which are sequentially positioned on the back surface field region; a front electrode part which passes through the front passivation region and is connected to the emitter region, wherein the front electrode part comprises a plurality of front electrodes that are apart from each other and a front bus bar connecting the plurality of front electrodes; a back electrode part which passes through the back passivation region and is connected to the back surface field region, wherein the back electrode part comprises a plurality of back electrodes that are apart from each other and a back bus bar connecting the plurality of back electrodes, wherein the front passivation region includes a first aluminum oxide layer and the back passivation region includes a second aluminum oxide layer.

公开(公告)号：US10230009B2

公开(公告)日：2019-03-12

申请号：US15995701

申请日：2018-06-01

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin Ha ,  Sungjin Kim ,  Juhwa Cheong ,  Junyong Ahn ,  Hyungwook Choi ,  Wonjae Chang ,  Jaesung Kim

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/0747 ,  H01L31/02 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/18

Abstract: A solar cell can include a silicon semiconductor substrate having a first conductive type; a oxide layer on a first surface of the silicon semiconductor substrate; a polysilicon layer on the oxide layer and having the first conductive type; an emitter region at a second surface of the silicon semiconductor substrate opposite to the first surface and having a second conductive type opposite to the first conductive type; a first passivation film on the polysilicon layer; a first electrode connected to the polysilicon layer through an opening formed in the first passivation film; a second passivation film on the emitter region; and a second electrode connected to the emitter region through an opening formed in the second passivation film.

公开(公告)号：US09978888B2

公开(公告)日：2018-05-22

申请号：US15259356

申请日：2016-09-08

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung Yang ,  Yongduk Jin ,  Manhyo Ha ,  Juhwa Cheong

IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/0684 ,  H01L31/1804 ,  H01L31/186 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for manufacturing a solar cell, the method including: preparing a semiconductor substrate; ion-implanting a pre-amorphization element to form an amorphous layer at at least a part of one surface of the semiconductor substrate; ion-implanting a first conductive type dopant to the one surface of the semiconductor substrate to form a first dopant layer; and forming a first electrode electrically connected to the first dopant layer, wherein a concentration of the pre-amorphization element in one portion of the first dopant layer is different from a concentration of the pre-amorphization element in another portion of the first dopant layer.

公开(公告)号：US09755089B2

公开(公告)日：2017-09-05

申请号：US14478841

申请日：2014-09-05

Applicant: LG ELECTRONICS INC.

Inventor： Juhwa Cheong ,  Sangwook Park ,  Junyong Ahn ,  Manhyo Ha

IPC: H01L21/00 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/02 ,  H01L31/068

CPC classification number: H01L31/022433 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/068 ,  Y02E10/547

Abstract: A solar cell is discussed. The solar cell includes a semiconductor substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type, which is positioned at a front surface of the semiconductor substrate, a front passivation part positioned on a front surface of the emitter region, a front electrode part which passes through the front passivation part and is electrically connected to the emitter region, a back passivation part positioned on a back surface of the semiconductor substrate, and a back electrode part which passes through the back passivation part and is electrically connected to the semiconductor substrate. The front passivation part and the back passivation part each include a silicon oxide layer. One of the front passivation part and the back passivation part includes an aluminum oxide layer.