公开(公告)号：WO2012108758A3

公开(公告)日：2012-10-11

申请号：PCT/MY2012000052

申请日：2012-03-13

Applicant: MIMOS BERHAD ,  SHENG DANIEL BIEN CHIA

Inventor： SHENG DANIEL BIEN CHIA

IPC: H01L21/74 ,  B81C1/00 ,  B81C99/00 ,  H01L21/306 ,  H01L21/76

CPC classification number: B81C1/00476 ,  B81B2203/0127 ,  B81C2201/0112 ,  B81C2201/0133

Abstract: The present invention provides a method to manufacture a silicon diaphragm, wherein an oxide layer (12) is embedded in the silicon substrate. (14) that acts as a support during the grinding and polishing processes. Further to that, the formation of the embedded oxide ( 12 ) is fully compatible with standard integrated circuit processing.

Abstract translation: 本发明提供了一种制造硅隔膜的方法，其中氧化物层（12）被嵌入在硅衬底中。 （14）在研磨和抛光过程中起支撑作用。 除此之外，嵌入式氧化物（12）的形成与标准集成电路处理完全兼容。