公开(公告)号：US20220383970A1

公开(公告)日：2022-12-01

申请号：US17506735

申请日：2021-10-21

Applicant: Microchip Technology Inc.

Inventor： Lorenzo Zuolo ,  Rino Micheloni

IPC: G11C29/02 ,  G11C29/44 ,  G11C29/10 ,  G11C29/50 ,  G11C11/54

Abstract: A method for outlier management at a flash controller includes testing a flash memory device to identify one or more outlier blocks of the flash memory device. Hyperparameters for a DNN are loaded into a training circuit of the flash controller. Test reads of the one or more outlier blocks are performed and a number of errors in the test reads is identified. The DNN is trained using a mini-batch training process and using the identified number of errors in the test reads and is tested to determine whether the trained DNN meets a training error threshold. The performing, the identifying, the training and the testing are repeated until the trained DNN meets the training error threshold to identify parameters of an outlier-block DNN. A neural network operation is performed using the identified parameters to predict a set of TVSO values. A read is performed using the set of predicted TVSO values.

公开(公告)号：US20220375532A1

公开(公告)日：2022-11-24

申请号：US17385857

申请日：2021-07-26

Applicant: Microchip Technology Inc.

Inventor： Lorenzo Zuolo ,  Rino Micheloni

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  G06N3/063 ,  G06N3/08

Abstract: A method for performing a read of a flash memory includes storing configuration files for a plurality of RRD-compensating RNNs. A current number of PE cycles for a flash memory are identified and TVSO values are identified corresponding to the current number of PE cycles. A current retention time and a current number of read disturbs for the flash memory are identified. The configuration file of the RRD-compensating RNN corresponding to the current number of PE cycles, the current retention time and current number of read disturbs is selected and is loaded into a neural network engine to form an RNN core in the neural network engine. A neural network operation of the RNN core is performed to predict RRD-compensated TVSO values. The input to the neural network operation includes the identified TVSO values. A read of the flash memory is performed using the predicted RRD-compensated TVSO values.

公开(公告)号：US20220027083A1

公开(公告)日：2022-01-27

申请号：US17089891

申请日：2020-11-05

Applicant: Microchip Technology Inc.

Inventor： Lorenzo Zuolo ,  Rino Micheloni

IPC: G06F3/06 ,  G06N3/04 ,  G06N5/04

Abstract: A method and apparatus for reading a flash memory device are disclosed. A Regression Neural Network (RNN) inference model is stored on a flash controller. The RNN inference model is configured for identifying at least one Threshold-Voltage-Shift Read-Error (TVS-RE) curve that identifies a number of errors as a function of Threshold Voltage Shift Offset (TVSO) values. The operation of a flash memory device is monitored to identify usage characteristic values. A neural network operation of the RNN inference model is performed to generate a TVS-RE curve corresponding to the usage characteristic values. The input for the neural network operation includes the usage characteristic values. A TVSO value is identified corresponding to a minimum value of the TVS-RE curve. A read of the flash memory device is performed using a threshold-voltage-shift read at the TVSO value.