Abstract:
An organic electronic component and a method for making an organic electronic component with a p-dopant are disclosed. In an embodiment, the component includes a matrix containing a zinc complex as a p-dopant, the zinc complex containing at least one ligand L of the following structure: formula (I) wherein R1 and R2 can be oxygen, sulphur, selenium, NH or NR4 independently selected from one another, wherein R3 may comprise alkyl, long-chain alkyl, cycloalkyl, halogen-alkyl, aryl, arylene, halogen-aryl, heteroaryl, heteroarylene, heterocyclic-alkylene, heterocycloalkyl, halogen-heteroaryl, alkenyl, halogen-alkenyl, alkynyl, halogen-alkynyl, ketoaryl, halogen-ketoaryl, ketoheteroaryl, ketoalkyl, halogen-ketoalkyl, ketoalkenyl, halogen-ketoalkenyl, halogen-alkyl-aryl or halogen-alkyl-heteroaryl, and wherein R4 is selected from the group consisting of alkyl and aryl which can be bonded to R3.
Abstract:
An organic electronic component with a dopant, a method for using a dopant and a method for producing a dopant are disclosed. In an embodiment the component includes a substrate and a first electrode arranged on the substrate. The component further includes at least one organic functional layer arranged on the first electrode, the at least one organic functional layer including a matrix material into which a p-dopant has been introduced and a second electrode arranged on the at least one organic functional layer, wherein the p-dopant includes a copper complex having at least one ligand, wherein the ligand has a benzene unit with two carbon atoms, wherein each carbon atom of the benzene unit has an aryloxy group and an iminium group directly attached as substituents, and wherein the at least one organic functional layer is hole-conducting.
Abstract:
A metal complex is disclosed. In an embodiment the metal complex includes at least one metal atom M and at least one ligand L attached to the metal atom M, wherein the ligand L has the following structure: wherein E1 and E2 are oxygen, wherein the substituent R1 is selected from the group consisting of branched or unbranched, fluorinated aliphatic hydrocarbons with 1 to 10 C atoms, wherein n=1 to 5, wherein the substituent R2 is selected from the group consisting of —CN, branched or unbranched aliphatic hydrocarbons with 1 to 10 C atoms, aryl and heteroaryl, and wherein m=0 to at most 5−n.
Abstract:
The invention relates to an organic light-emitting component, having a substrate (1), on which an organic, functional layer stack (9) is arranged between two electrodes (2, 6, 10), of which at least one electrode (2, 6, 10) is designed to be translucent, wherein the organic, functional layer stack (9) has at least one light-emitting layer (4, 41, 42) and directly adjacent to at least one of the electrodes (2, 6, 10), a charge-producing layer (30, 50, 90), which forms a tunnel transition.
Abstract:
A metal complex of a metal from groups 13 to 16 uses a ligand of the structure (I), where R1 and R2 can independently be oxygen, sulfur, selenium, NH or NR4, where R4 an alkyl or aryl and can be connected to R3. R3 is an alkyl, long-chain alkyl, alkoxy, long-chain alkoxy, cycloalkyl, halogenalkyl, aryl, arylene, halogenaryl, heteroaryl, heteroarylene, heterocycloalkylene, heterocycloalkyl, halogenheteroaryl, alkenyl, halogenalkenyl, alkynyl, halogenalkynyl, ketoaryl, halogenketoaryl, ketoheteroaryl, ketoalkyl, halogenketoalkyl, ketoalkenyl, halogenketoalkenyl, where in suitable radicals, one or more non-adjacent CH2— groups can be substituted independently of one another by —O—, —S—, —NH—, —NRo—, —SiRoRoo—, —CO—, —COO—, —OCO—, —OCO—O—, —SO2—, —S—CO—, —CO—S—, —CY1=CY2 or —C═C—, specifically in such a way that O and/or S atoms are not connected directly to one another, are likewise optionally substituted with aryl- or heteroaryl preferably containing 1 to 30 C atoms, as a dopant for matrix materials in organic electronic components.
Abstract:
A bi- or polynuclear metal complex of a metal of groups Vb/VIb/VIIb (IUPAC groups 5-7), has a ligand of the structure (a), wherein R1 and R2, independently of each other, can be oxygen, sulfur, selenium, NH, or NR4, wherein R4 is selected from alkyls and aryls and can be bonded to R3; and R3 is selected from alkyls, long-chain alkyls, alkoxys, long-chain alkoxys, cycloalkyls, haloalkyls, aryls, arylenes, haloaryls, heteroaryls, heteroarylenes, heterocycloalkylenes, heterocycloalkyls, haloheteroaryls, alkenyls, haloalkenyls, alkynyls, haloalkynyls, ketoaryls, haloketoaryls, ketoheteroaryls, ketoalkyls, haloketoalkyls, ketoalkenyls, haloketoalkenyls, where one or more non-adjacent CH2 groups can be replaced, independently, with (1) —O—, —S—, —NH—, —NR∘—, —SiR∘R∘∘—, —CO—, —COO—, —OCO—, —OCO—O—, —SO2-, —S—CO—, —CO—S—, —CY1=CY2, or —C≡O— in such a way that O and/or S atoms are not bonded directly to each other, or (2) aryls or heteroaryls containing 1 to 30 C atoms, as a p-type doping agent for matrix materials of electronic components.
Abstract:
Various embodiments may relate to an electronic structure, including at least one organic layer, at least one metal growth layer grown onto the organic layer, and at least one metal layer grown on the metal growth layer. The at least one metal growth layer contains germanium. Various embodiments further relate to a method for producing the electronic structure.
Abstract:
A bi- or polynuclear metal complex of a metal of groups Vb/VIb/VIIb (IUPAC groups 5-7), has a ligand of the structure (a), wherein R1 and R2, independently of each other, can be oxygen, sulfur, selenium, NH, or NR4, wherein R4 is selected from alkyls and aryls and can be bonded to R3; and R3 is selected from alkyls, long-chain alkyls, alkoxys, long-chain alkoxys, cycloalkyls, haloalkyls, aryls, arylenes, haloaryls, heteroaryls, heteroarylenes, heterocycloalkylenes, heterocycloalkyls, haloheteroaryls, alkenyls, haloalkenyls, alkynyls, haloalkynyls, ketoaryls, haloketoaryls, ketoheteroaryls, ketoalkyls, haloketoalkyls, ketoalkenyls, haloketoalkenyls, where one or more non-adjacent CH2 groups can be replaced, independently, with (1) —O—, —S—, —NH—, —NR°—, —SiR°R°°—, —CO—, —COO—, —OCO—, —OCO—O—, —SO2-, —S—CO—, —CO—S—, —CY1=CY2, or —C≡O— in such a way that O and/or S atoms are not bonded directly to each other, or (2) aryls or heteroaryls containing 1 to 30 C atoms, as a p-type doping agent for matrix materials of electronic components.
Abstract translation:Vb / VIb / VIIb族金属的双或多核金属络合物(IUPAC基团5-7)具有结构(a)的配体,其中R 1和R 2彼此独立地可以是氧,硫 ,硒,NH或NR4,其中R4选自烷基和芳基并且可以键合到R3; 并且R 3选自烷基,长链烷基,烷氧基,长链烷氧基,环烷基,卤代烷基,芳基,亚芳基,卤代芳基,杂芳基,杂芳基,杂环亚烷基,杂环烷基,卤代杂芳基,烯基,卤代烯基,炔基,卤代炔基,酮基芳基,卤代芳基 ,酮基芳基,酮基烷基,卤代烷基,酮链烯基,卤代烯基,其中一个或多个不相邻的CH 2基团可以独立地被(1)-O - , - S - , - NH - , - NRO - , - SiR R 0 - , - CO-,-COO-,-OCO-,-OCO-O-,-SO2-,-S-CO-,-CO-S-,-CY1 = CY2或-C≡O- 使O和/或S原子彼此不直接键合,或(2)含有1至30个C原子的芳基或杂芳基作为电子元件基质材料的p型掺杂剂。