公开(公告)号：US20140117396A1

公开(公告)日：2014-05-01

申请号：US14118475

申请日：2012-05-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Eisert ,  Torsten Baade ,  Michael Zitzlsperger

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/52

CPC classification number: H01L33/502 ,  H01L33/06 ,  H01L33/28 ,  H01L33/32 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50 ,  H01L33/505 ,  H01L33/52 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0091 ,  H01L2224/48091 ,  H01L2924/00012 ,  H01L2224/4554

Abstract: An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, the outer surface emitting primary light, and leaves free a second partial region of the outer surface, the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body, the first lamina is at least partly transmissive to the primary radiation, a section of the second lamina covers at least the second partial region, and at least the section of the second lamina is designed to be absorbent and/or reflective and/or scattering for the primary radiation.

Abstract translation: 光电子半导体芯片包括发射初级光的半导体本体和通过至少部分初级光的波长转换而发射二次光的发光转换元件，其中发光转换元件具有固定到第一部分区域的第一部分区域 所述半导体本体的外表面，所述外表面发射初级光，并且释放所述外表面的第二部分区域，所述发光转换元件具有固定到所述第一层的背离半导体主体的表面的第二层， 与半导体本体间隔开，第一薄片至少部分地透射到主辐射，第二薄片的一部分至少覆盖第二部分区域，并且至少第二薄片的部分被设计成吸收和/ 或用于初级辐射的反射和/或散射。

公开(公告)号：US11430922B2

公开(公告)日：2022-08-30

申请号：US16479198

申请日：2018-02-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jörg Frischeisen ,  Angela Eberhardt ,  Florian Peskoller ,  Thomas Huckenbeck ,  Michael Schmidberger ,  Jürgen Bauer ,  Dominik Eisert ,  Albert Schneider

IPC: H01L33/50 ,  C09J183/04 ,  C09K11/02 ,  C09K11/08 ,  C09K11/77

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface during operation and a self-supporting conversion element arranged in a beam path of the semiconductor layer sequence, wherein the self-supporting conversion element includes a substrate and subsequently a first layer, wherein the first layer includes at least one conversion material embedded in a matrix material, wherein the matrix material includes at least one condensed sol-gel material, wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer, and wherein the substrate is free of the sol-gel material and the conversion material and mechanically stabilizes the first layer.

公开(公告)号：US20200251622A1

公开(公告)日：2020-08-06

申请号：US16269458

申请日：2019-02-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Eisert ,  Yi Zheng ,  Victor Perez ,  Juliane Kechele ,  Johanna Strube-Knyrim

IPC: H01L33/50 ,  H01L33/00 ,  C09K11/55

Abstract: A conversion element, a radiation-emitting semiconductor device and a method for producing a conversion element are disclosed. In an embodiment a conversion element includes a ceramic luminescent material and a flux material, wherein the flux material has a boiling temperature above 1500° C. and/or a melting temperature below 1500° C., and wherein the flux material has a concentration in the conversion element between at least 0.01 wt % and at most 1 wt %.

公开(公告)号：US10411170B2

公开(公告)日：2019-09-10

申请号：US15570699

申请日：2016-04-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sonja Tragl ,  Dominik Eisert ,  Stefan Lange ,  Nils Kaufmann ,  Alexander Martin ,  Krister Bergenek

IPC: H01L33/50 ,  C09K11/77 ,  A61B1/06 ,  H01L33/48 ,  H01L33/58 ,  H01L33/62

Abstract: A radiation-emitting optoelectronic device, a method for using a radiation-emitting optoelectronic device and a method for making a radiation-emitting optoelectronic device are disclosed. In an embodiment, the device includes a semiconductor chip configured to emit a primary radiation and a conversion element including a conversion material which comprises Cr and/or Ni ions and a host material and which, during operation of the device, converts the primary radiation emitted by the semiconductor chip into a secondary radiation of a wavelength between 700 nm and 2000 nm, wherein the host material comprises EAGa12O19, AyGa5O(15+y)/2, AE3Ga2O14, Ln3Ga5GeO14, Ga2O3, Ln3Ga5.5D0.5O14 or Mg4D2O9, wherein EA=Mg, Ca, Sr and/or Ba, A=Li, Na, K and/or Rb, AE=Mg, Ca, Sr and/or Ba, Ln=La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and/or Lu and D=Nb and/or Ta, and wherein y=0.9-1.9.

公开(公告)号：US20180298281A1

公开(公告)日：2018-10-18

申请号：US15735154

申请日：2016-06-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Zhengbo Yu ,  Jason Montaner ,  Madis Raukas ,  Yi Zheng ,  Sonja Tragl ,  Dominik Eisert

IPC: C09K11/77 ,  C09K11/08 ,  H01L33/50

Abstract: A composite oxynitride ceramic converter and a light source having the same are disclosed. In an embodiment the composite oxynitride ceramic converter includes a first phase of a triclinic SrSi2O2N2:Eu phosphor and a second phase of a hexagonal Sr3Si6N4O9:Eu phosphor.

公开(公告)号：US20160343917A1

公开(公告)日：2016-11-24

申请号：US15227287

申请日：2016-08-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Eisert ,  Torsten Baade ,  Michael Zitzlsperger

IPC: H01L33/50 ,  H01L33/62 ,  H01L33/06 ,  H01L33/32 ,  H01L33/28 ,  H01L33/56 ,  H01L33/60

CPC classification number: H01L33/502 ,  H01L33/06 ,  H01L33/28 ,  H01L33/32 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50 ,  H01L33/505 ,  H01L33/52 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0091 ,  H01L2224/48091 ,  H01L2924/00012 ,  H01L2224/4554

Abstract: An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, the outer surface emitting primary light, and leaving free a second partial region of the outer surface, the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body, the first lamina is at least partly transmissive to the primary radiation, a section of the second lamina covers at least the second partial region, and at least the section of the second lamina is absorbent and/or reflective and/or scattering for the primary radiation.

Abstract translation: 光电子半导体芯片包括发射初级光的半导体本体和通过至少部分初级光的波长转换而发射二次光的发光转换元件，其中发光转换元件具有固定到第一部分区域的第一部分区域 所述半导体主体的外表面，所述外表面发射初级光，并且释放所述外表面的第二部分区域，所述发光转换元件具有固定到所述第一层的背离半导体主体的表面的第二层， 与半导体本体间隔开，第一薄片至少部分地透射到主辐射，第二薄片的一部分至少覆盖第二部分区域，并且至少第二薄片的部分是吸收和/或反射的，并且 /或用于一次辐射的散射。