公开(公告)号：EP2338182A1

公开(公告)日：2011-06-29

申请号：EP09748013.1

申请日：2009-09-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： STRASSBURG, Martin ,  HÖPPEL, Lutz ,  PETER, Matthias ,  ZEHNDER, Ulrich ,  TAKI, Tetsuya ,  LEBER, Andreas ,  BUTENDEICH, Rainer ,  BAUER, Thomas

IPC: H01L33/40

CPC classification number: H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to an optoelectronic semiconductor component, comprising a semiconductor layer sequence (3) which is based on a nitride compound semiconductor and comprises an n-doped region (4), a p-doped region (8), and an active zone (5) disposed between the n-doped region (4) and the p-doped region (8). The p-doped region (8) includes a p-contact layer (7) comprising In
x Al
y Ga
1-x-y N, where 0 ≤ x ≤ 1, 0 ≤ y ≤ 1, and x + y ≤ 1. The p-contact layer (7) adjoins a connecting layer (9) made of a metal, a metal alloy, or a transparent conductive oxide, wherein on an interface to the connecting layer (9) the p-contact layer (7) comprises first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation.

公开(公告)号：EP2338182B1

公开(公告)日：2018-11-07

申请号：EP09748013.1

申请日：2009-09-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： STRASSBURG, Martin ,  HÖPPEL, Lutz ,  PETER, Matthias ,  ZEHNDER, Ulrich ,  TAKI, Tetsuya ,  LEBER, Andreas ,  BUTENDEICH, Rainer ,  BAUER, Thomas

IPC: H01L33/40

CPC classification number: H01L33/40 ,  H01L2924/0002 ,  H01L2924/00