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公开(公告)号:US09812842B2
公开(公告)日:2017-11-07
申请号:US15189598
申请日:2016-06-22
Applicant: Oracle International Corporation
Inventor: Ivan Shubin , Xuezhe Zheng , Jin Yao , Jin-Hyoung Lee , Jock T. Bovington , Shiyun Lin , Ashok V. Krishnamoorthy
CPC classification number: H01S5/14 , H01S3/08059 , H01S5/02252 , H01S5/0228 , H01S5/1028 , H01S5/1092 , H01S5/12 , H01S5/141
Abstract: A hybrid optical source comprises an optical gain chip containing an optical gain material that provides an optical signal, and an optical reflector chip including an optical reflector. It also includes a semiconductor-on-insulator (SOI) chip, which comprises a semiconductor layer having a planarized surface facing the semiconductor reflector. The semiconductor layer includes: an optical coupler to redirect the optical signal to and from the planarized surface; and an optical waveguide to convey the optical signal from the optical coupler. While assembling these chips, a height of the optical gain material is referenced against the planarized surface of the semiconductor layer, a height of the optical reflector is referenced against the planarized surface of the semiconductor layer, and the optical reflector is aligned with the optical coupler, so that the optical signal emanating from the optical gain material is reflected by the optical reflector and into the optical coupler.
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公开(公告)号:US09768587B1
公开(公告)日:2017-09-19
申请号:US15341691
申请日:2016-11-02
Applicant: Oracle International Corporation
Inventor: Xuezhe Zheng , Jin Yao , Ying Luo , Ashok V. Krishnamoorthy
CPC classification number: H01S5/1092 , H01S3/106 , H01S5/0071 , H01S5/0268 , H01S5/0608 , H01S5/141 , H01S5/142 , H01S5/187 , H01S5/4087 , H01S5/5027
Abstract: The disclosed embodiments provide a tunable laser that includes a set of M reflective silicon optical amplifiers (RSOAs) and a set of N narrow-band reflectors. It also includes a silicon-photonic optical switch, having M amplifier ports, which are coupled through a set of M optical waveguides to the set of M RSOAs, and N reflector ports, which are coupled to the set of N narrow-band reflectors. The tunable laser also includes a switching mechanism that facilitates coupling at least one selected amplifier port from the M amplifier ports with a selected reflector port from the N reflector ports, thereby causing an RSOA coupled to the selected amplifier port to form a lasing cavity with a narrow-band reflector coupled to the selected reflector port. The tunable laser also includes a laser output, which is optically coupled to the lasing cavity.
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公开(公告)号:US10281746B2
公开(公告)日:2019-05-07
申请号:US16122571
申请日:2018-09-05
Applicant: Oracle International Corporation
Inventor: Xuezhe Zheng , Ying Luo , Jin Yao , Ashok V. Krishnamoorthy
IPC: G02F1/01 , H01S5/30 , H01S5/125 , H01S5/06 , H01S5/50 , H01S5/10 , G02B6/12 , G02B6/42 , G02B6/28 , G02B6/293
Abstract: An optical transmitter includes a reflective semiconductor optical amplifier (RSOA) coupled to an input end of a first optical waveguide. An end of the first optical waveguide provides a transmitter output for the optical transmitter. Moreover, a section of the first optical waveguide between the input end and the output end is optically coupled to a ring modulator that modulates an optical signal based on an electrical input signal. A passive ring filter (or a 1×N silicon-photonic switch and a bank of band reflectors) is connected to provide a mirror that reflects light received from the second optical waveguide back toward the RSOA to form a lasing cavity. Moreover, the ring modulator and the passive ring filter have different sizes, which causes a Vernier effect that provides a large wavelength tuning range for the lasing cavity in response to tuning the ring modulator and the passive ring filter.
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公开(公告)号:US20190004340A1
公开(公告)日:2019-01-03
申请号:US16122571
申请日:2018-09-05
Applicant: Oracle International Corporation
Inventor: Xuezhe Zheng , Ying Luo , Jin Yao , Ashok V. Krishnamoorthy
IPC: G02F1/01 , H01S5/06 , H01S5/10 , H01S5/125 , H01S5/30 , H01S5/50 , G02B6/28 , G02B6/293 , G02B6/42 , G02B6/12
Abstract: An optical transmitter includes a reflective semiconductor optical amplifier (RSOA) coupled to an input end of a first optical waveguide. An end of the first optical waveguide provides a transmitter output for the optical transmitter. Moreover, a section of the first optical waveguide between the input end and the output end is optically coupled to a ring modulator that modulates an optical signal based on an electrical input signal. A passive ring filter (or a 1×N silicon-photonic switch and a bank of band reflectors) is connected to provide a mirror that reflects light received from the second optical waveguide back toward the RSOA to form a lasing cavity. Moreover, the ring modulator and the passive ring filter have different sizes, which causes a Vernier effect that provides a large wavelength tuning range for the lasing cavity in response to tuning the ring modulator and the passive ring filter.
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公开(公告)号:US20170294760A1
公开(公告)日:2017-10-12
申请号:US15189598
申请日:2016-06-22
Applicant: Oracle International Corporation
Inventor: Ivan Shubin , Xuezhe Zheng , Jin Yao , Jin-Hyoung Lee , Jock T. Bovington , Shiyun Lin , Ashok V. Krishnamoorthy
CPC classification number: H01S5/14 , H01S3/08059 , H01S5/02252 , H01S5/0228 , H01S5/1028 , H01S5/1092 , H01S5/12 , H01S5/141
Abstract: A hybrid optical source comprises an optical gain chip containing an optical gain material that provides an optical signal, and an optical reflector chip including an optical reflector. It also includes a semiconductor-on-insulator (SOI) chip, which comprises a semiconductor layer having a planarized surface facing the semiconductor reflector. The semiconductor layer includes: an optical coupler to redirect the optical signal to and from the planarized surface; and an optical waveguide to convey the optical signal from the optical coupler. While assembling these chips, a height of the optical gain material is referenced against the planarized surface of the semiconductor layer, a height of the optical reflector is referenced against the planarized surface of the semiconductor layer, and the optical reflector is aligned with the optical coupler, so that the optical signal emanating from the optical gain material is reflected by the optical reflector and into the optical coupler.
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公开(公告)号:US09780524B1
公开(公告)日:2017-10-03
申请号:US15341675
申请日:2016-11-02
Applicant: Oracle International Corporation
Inventor: Xuezhe Zheng , Jin Yao , Ying Luo , Ashok V. Krishnamoorthy
IPC: H01S5/00 , H01S5/06 , H01S5/20 , H01S5/30 , H01S5/068 , H01S5/0683 , H01S5/125 , H01S5/10 , H01S5/14 , H01S5/50 , H01S5/026 , H01S5/187
CPC classification number: H01S5/0608 , H01S3/105 , H01S3/106 , H01S5/0268 , H01S5/0617 , H01S5/06821 , H01S5/06837 , H01S5/1028 , H01S5/1092 , H01S5/125 , H01S5/141 , H01S5/142 , H01S5/187 , H01S5/20 , H01S5/3013 , H01S5/5027
Abstract: A tunable laser includes a reflective silicon optical amplifier (RSOA) with a reflective end and an interface end and an array of narrow-band reflectors, which each have a different center wavelength. It also includes a silicon-photonic optical switch, having an input port and N output ports that are coupled to a different narrow-band reflector in the array of narrow-band reflectors. The tunable laser also includes an optical waveguide coupled between the interface end of the RSOA and the input of the silicon-photonic optical switch. The frequency of this tunable laser can be tuned in discrete increments by selectively coupling the input port of the silicon-photonic optical switch to one of the N output ports, thereby causing the RSOA to form a lasing cavity with a selected narrow-band reflector coupled to the selected output port. The tunable laser also includes a laser output optically coupled to the lasing cavity.
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公开(公告)号:US09411177B2
公开(公告)日:2016-08-09
申请号:US14742431
申请日:2015-06-17
Applicant: Oracle International Corporation
Inventor: John E. Cunningham , Jin Yao , Ivan Shubin , Guoliang Li , Xuezhe Zheng , Shiyun Lin , Hiren D. Thacker , Stevan S. Djordjevic , Ashok V. Krishnamoorthy
IPC: G02F1/025 , G02B6/12 , H01L31/0232 , G02F1/00 , G02F1/015
CPC classification number: G02F1/025 , G02B6/12 , G02B2006/12107 , G02B2006/12142 , G02F1/0018 , G02F1/015 , G02F2001/0157 , H01L21/26513 , H01L31/02327 , Y02P70/521
Abstract: An integrated optical device includes an electro-absorption modulator disposed on a top surface of an optical waveguide. The electro-absorption modulator includes germanium disposed in a cavity between an n-type doped silicon sidewall and a p-type doped silicon sidewall. By applying a voltage between the n-type doped silicon sidewall and the p-type doped silicon sidewall, an electric field can be generated in a plane of the optical waveguide, but perpendicular to a propagation direction of the optical signal. This electric field shifts a band gap of the germanium, thereby modulating the optical signal.
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公开(公告)号:US20150293383A1
公开(公告)日:2015-10-15
申请号:US14252607
申请日:2014-04-14
Applicant: Oracle International Corporation
Inventor: John E. Cunningham , Jin Yao , Ivan Shubin , Guoliang Li , Xuezhe Zheng , Shiyun Lin , Hiren D. Thacker , Stevan S. Djordjevic , Ashok V. Krishnamoorthy
CPC classification number: G02F1/025 , G02B6/12 , G02B2006/12107 , G02B2006/12142 , G02F1/0018 , G02F1/015 , G02F2001/0157 , H01L21/26513 , H01L31/02327 , Y02P70/521
Abstract: An integrated optical device includes an electro-absorption modulator disposed on a top surface of an optical waveguide. The electro-absorption modulator includes germanium disposed in a cavity between an n-type doped silicon sidewall and a p-type doped silicon sidewall. By applying a voltage between the n-type doped silicon sidewall and the p-type doped silicon sidewall, an electric field can be generated in a plane of the optical waveguide, but perpendicular to a propagation direction of the optical signal. This electric field shifts a band gap of the germanium, thereby modulating the optical signal.
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公开(公告)号:US20180143461A1
公开(公告)日:2018-05-24
申请号:US15357358
申请日:2016-11-21
Applicant: Oracle International Corporation
Inventor: Xuezhe Zheng , Ying Luo , Jin Yao , Ashok V. Krishnamoorthy
CPC classification number: G02F1/011 , G02B6/12004 , G02B6/2808 , G02B6/29338 , G02B6/4286 , G02F2203/15 , G02F2203/70 , H01S5/0612 , H01S5/1071 , H01S5/125 , H01S5/3013 , H01S5/50
Abstract: An optical transmitter includes a reflective semiconductor optical amplifier (RSOA) coupled to an input end of a first optical waveguide. An end of the first optical waveguide provides a transmitter output for the optical transmitter. Moreover, a section of the first optical waveguide between the input end and the output end is optically coupled to a ring modulator that modulates an optical signal based on an electrical input signal. A passive ring filter (or a 1×N silicon-photonic switch and a bank of band reflectors) is connected to provide a mirror that reflects light received from the second optical waveguide back toward the RSOA to form a lasing cavity. Moreover, the ring modulator and the passive ring filter have different sizes, which causes a Vernier effect that provides a large wavelength tuning range for the lasing cavity in response to tuning the ring modulator and the passive ring filter.
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公开(公告)号:US20150362764A1
公开(公告)日:2015-12-17
申请号:US14742431
申请日:2015-06-17
Applicant: Oracle International Corporation
Inventor: John E. Cunningham , Jin Yao , Ivan Shubin , Guoliang Li , Xuezhe Zheng , Shiyun Lin , Hiren D. Thacker , Stevan S. Djordjevic , Ashok V. Krishnamoorthy
CPC classification number: G02F1/025 , G02B6/12 , G02B2006/12107 , G02B2006/12142 , G02F1/0018 , G02F1/015 , G02F2001/0157 , H01L21/26513 , H01L31/02327 , Y02P70/521
Abstract: An integrated optical device includes an electro-absorption modulator disposed on a top surface of an optical waveguide. The electro-absorption modulator includes germanium disposed in a cavity between an n-type doped silicon sidewall and a p-type doped silicon sidewall. By applying a voltage between the n-type doped silicon sidewall and the p-type doped silicon sidewall, an electric field can be generated in a plane of the optical waveguide, but perpendicular to a propagation direction of the optical signal. This electric field shifts a band gap of the germanium, thereby modulating the optical signal.
Abstract translation: 集成光学器件包括设置在光波导的顶表面上的电吸收调制器。 电吸收调制器包括设置在n型掺杂硅侧壁和p型掺杂硅侧壁之间的空腔中的锗。 通过在n型掺杂硅侧壁和p型掺杂硅侧壁之间施加电压,可以在光波导的平面中产生电场,但是垂直于光信号的传播方向。 该电场移动锗的带隙,从而调制光信号。
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